The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures L Seravalli, M Minelli, P Frigeri, P Allegri, V Avanzini, S Franchi
Applied physics letters 82 (14), 2341-2343, 2003
98 2003 Quantum dot nanostructures and molecular beam epitaxy S Franchi, G Trevisi, L Seravalli, P Frigeri
Progress in Crystal Growth and Characterization of Materials 47 (2-3), 166-195, 2003
89 2003 Quantum dot strain engineering of< equation>< font face='verdana'> In</font>< font face='verdana'> As</font>/< font face='verdana'> In</font>< font face='verdana'> Ga</font … L Seravalli, M Minelli, P Frigeri, S Franchi, G Guizzetti, M Patrini, ...
Journal of applied physics 101 (2), 024313-024313-8, 2007
79 * 2007 Quantum dot strain engineering for light emission at 1.3, 1.4 and L Seravalli, P Frigeri, M Minelli, P Allegri, V Avanzini, S Franchi
Applied Physics Letters 87 (6), 063101, 2005
62 2005 L Seravalli, P Frigeri, G Trevisi, S Franchi
Applied Physics Letters 92 (21), 213104, 2008
53 2008 Carrier thermodynamics in InAs∕ In x Ga 1− x As quantum dots S Sanguinetti, D Colombo, M Guzzi, E Grilli, M Gurioli, L Seravalli, ...
Physical Review B 74 (20), 205302, 2006
53 2006 Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates L Seravalli, G Trevisi, P Frigeri, D Rivas, G Munoz-Matutano, I Suarez, ...
Applied physics letters 98 (17), 173112, 2011
50 2011 Effects of the quantum dot ripening in high-coverage P Frigeri, L Nasi, M Prezioso, L Seravalli, G Trevisi, E Gombia, R Mosca, ...
Journal of Applied Physics 102 (8), 083506, 2007
43 2007 Defect passivation in strain engineered InAs/(InGa) As quantum dots S Mazzucato, D Nardin, M Capizzi, A Polimeni, A Frova, L Seravalli, ...
Materials Science and Engineering: C 25 (5-8), 830-834, 2005
43 2005 The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures L Seravalli, G Trevisi, P Frigeri, S Franchi, M Geddo, G Guizzetti
Nanotechnology 20 (27), 275703, 2009
42 2009 Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping J Gomis-Bresco, G Muñoz-Matutano, J Martínez-Pastor, B Alén, ...
New Journal of Physics 13 (2), 023022, 2011
41 2011 Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at L Seravalli, C Bocchi, G Trevisi, P Frigeri
Journal of Applied Physics 108 (11), 114313, 2010
37 2010 Metamorphic quantum dots: quite different nanostructures L Seravalli, P Frigeri, L Nasi, G Trevisi, C Bocchi
Journal of Applied Physics 108 (6), 064324, 2010
34 2010 Metamorphic buffers and optical measurement of residual strain M Geddo, G Guizzetti, M Patrini, T Ciabattoni, L Seravalli, P Frigeri, ...
Applied Physics Letters 87 (26), 263120, 2005
33 2005 Reversible Control of In‐Plane Elastic Stress Tensor in Nanomembranes J Martín‐Sánchez, R Trotta, G Piredda, C Schimpf, G Trevisi, L Seravalli, ...
Advanced Optical Materials 4 (5), 682-687, 2016
31 2016 Residual strain measurements in InGaAs metamorphic buffer layers on GaAs V Bellani, C Bocchi, T Ciabattoni, S Franchi, P Frigeri, P Galinetto, ...
The European Physical Journal B 56 (3), 217-222, 2007
31 2007 Molecular beam epitaxy: an overview P Frigeri, L Seravalli, G Trevisi, S Franchi
Elsevier, 2016
28 2016 Design and growth of metamorphic InAs/InGaAs quantum dots for single photon emission in the telecom window L Seravalli, G Trevisi, P Frigeri
CrystEngComm 14 (20), 6833-6838, 2012
28 2012 Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots S Sanguinetti, M Guzzi, E Grilli, M Gurioli, L Seravalli, P Frigeri, S Franchi, ...
Physical Review B 78 (8), 085313, 2008
28 2008 Low density InAs/(In) GaAs quantum dots emitting at long wavelengths G Trevisi, L Seravalli, P Frigeri, S Franchi
Nanotechnology 20 (41), 415607, 2009
27 2009 
Guillermo Muñoz MatutanoInstituto de Ciencias de los Materiales de la Universidad de ValenciaEmail verificata su uv.es
