Nonpolar A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell
IEEE Electron Device Letters 39 (4), 520-523, 2018
110 2018 High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ...
IEEE Photonics Technology Letters 29 (4), 381-384, 2017
76 2017 Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ...
Applied Physics Letters 112 (4), 2018
69 2018 Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors SM Mishkat-Ul-Masabih, AA Aragon, M Monavarian, TS Luk, DF Feezell
Applied Physics Express 12 (3), 036504, 2019
63 2019 Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ...
Journal of Applied Physics 122 (3), 2017
61 2017 Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ...
Optics express 25 (16), 19343-19353, 2017
40 2017 Trade-off between bandwidth and efficiency in semipolar (202¯ 1¯) InGaN/GaN single-and multiple-quantum-well light-emitting diodes M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ...
Applied Physics Letters 112 (19), 2018
33 2018 High-Voltage Regrown Nonpolar M Monavarian, G Pickrell, AA Aragon, I Stricklin, MH Crawford, ...
IEEE Electron Device Letters 40 (3), 387-390, 2019
31 2019 Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements A Rashidi, M Monavarian, A Aragon, D Feezell
Scientific Reports 9 (1), 19921, 2019
24 2019 Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb N Rahimi, AA Aragon, OS Romero, DM Shima, TJ Rotter, SD Mukherjee, ...
APL Materials 1 (6), 2013
23 2013 Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes A Aragon, M Monavarian, I Stricklin, G Pickrell, M Crawford, A Allerman, ...
physica status solidi (a) 217 (7), 1900757, 2020
17 2020 High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth A Rashidi, AK Rishinaramangalam, AA Aragon, S Mishkat-Ul-Masabih, ...
IEEE Photonics Technology Letters 32 (7), 383-386, 2020
15 2020 Exclusion of injection efficiency as the primary cause of efficiency droop in semipolar (202¯ 1¯) InGaN/GaN light-emitting diodes A Rashidi, M Monavarian, A Aragon, D Feezell
Applied Physics Letters 113 (3), 2018
15 2018 Transmission electron microscopy-based analysis of electrically conductive surface defects in large area GaSb homoepitaxial diodes grown using molecular beam epitaxy OS Romero, AA Aragon, N Rahimi, D Shima, S Addamane, TJ Rotter, ...
Journal of electronic materials 43, 926-930, 2014
14 2014 Investigation of interfacial impurities in m-plane GaN regrown pn junctions for high-power vertical electronic devices I Stricklin, M Monavarian, A Aragon, G Pickrell, M Crawford, A Allerman, ...
Wide Bandgap Power and Energy Devices and Applications III 10754, 1075402, 2018
13 2018 Characterization of surface defects on Be-implanted GaSb N Rahimi, AA Aragon, DM Shima, C Hains, T Busani, O Lavrova, ...
Journal of Vacuum Science & Technology B 32 (4), 2014
13 2014 Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique N Rahimi, AA Aragon, OS Romero, DM Kim, NBJ Traynor, TJ Rotter, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II …, 2013
11 2013 GaSb thermophotovoltaics: current challenges and solutions N Rahimi, DJ Herrera, A Aragon, DM Shima, OS Romero, TJ Rotter, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV …, 2015
6 2015 Ultra-low resistance NiGeAu and PdGeAu ohmic contacts on N-GaSb grown on GaAs N Rahimi, AA Aragon, OS Romero, DM Shima, TJ Rotter, G Balakrishnan, ...
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2123-2126, 2013
6 2013 Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes F Mirkhosravi, A Rashidi, J Gallagher, M Monavarian, A Aragon, K Ahn, ...
AIP Advances 11 (2), 2021
5 2021 
Daniel FeezellUniversity of New MexicoEmail verificata su unm.edu
