Mattias Hammar
Mattias Hammar
Email verificata su KTH.se
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Anno
Cyclic growth of strain-relaxed islands
FK LeGoues, MC Reuter, J Tersoff, M Hammar, RM Tromp
Physical review letters 73 (2), 300, 1994
2591994
Transfer-printed stacked nanomembrane lasers on silicon
H Yang, D Zhao, S Chuwongin, JH Seo, W Yang, Y Shuai, J Berggren, ...
Nature Photonics 6 (9), 615-620, 2012
1982012
In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si (001) Ge
M Hammar, FK LeGoues, J Tersoff, MC Reuter, RM Tromp
Surface science 349 (2), 129-144, 1996
1851996
Adsorption of Sn onSi (111) 7× 7: reconstructions in the monolayer regime
C Törnevik, M Göthelid, M Hammar, UO Karlsson, NG Nilsson, ...
Surface science 314 (2), 179-187, 1994
831994
High-performance 1.3 µm InGaAs vertical cavity surface emitting lasers
P Sundgren, RM von Würtemberg, J Berggren, M Hammar, M Ghisoni, ...
Electronics Letters 39 (15), 1128-1129, 2003
722003
Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
J Misiewicz, R Kudrawiec, K Ryczko, G Sęk, A Forchel, JC Harmand, ...
Journal of Physics: Condensed Matter 16 (31), S3071, 2004
682004
Large-area InP-based crystalline nanomembrane flexible photodetectors
W Yang, H Yang, G Qin, Z Ma, J Berggren, M Hammar, R Soref, W Zhou
Applied Physics Letter Vol. 96, page 121107 (2010), 2010
652010
Coupling focused microwaves and solvent-free phase transfer catalysis: application to the synthesis of new furanic diethers
M Majdoub, A Loupy, A Petit, S Roudesli
Tetrahedron 52 (2), 617-628, 1996
621996
Relaxation mechanism of Ge islands/Si (001) at low temperature
FK LeGoues, J Tersoff, MC Reuter, M Hammar, R Tromp
Applied physics letters 67 (16), 2317-2319, 1995
591995
Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning
S Mogg, N Chitica, U Christiansson, R Schatz, P Sundgren, C Asplund, ...
IEEE Journal of Quantum Electronics 40 (5), 453-462, 2004
582004
Epitaxial growth of Sn on Si (111): A direct atomic-structure determination of the (2√ 3× 2√ 3) R30° reconstructed surface
C Törnevik, M Hammar, NG Nilsson, SA Flodström
Physical Review B 44 (23), 13144, 1991
51*1991
In situ TEM study of the growth of Ge on Si (111)
FK LeGoues, M Hammar, MC Reuter, RM Tromp
Surface science 349 (3), 249-266, 1996
491996
Adatom and rest-atom contributions in Ge (111) c (2× 8) and Ge (111)-Sn (7× 7) core-level spectra
M Göthelid, TM Grehk, M Hammar, UO Karlsson, SA Flodström
Physical Review B 48 (3), 2012, 1993
471993
Sn-induced surface reconstructions on the Ge (111) surface studied with scanning tunneling microscopy
M Göthelid, M Hammar, C Törnevik, UO Karlsson, NG Nilsson, ...
Surface science 271 (3), L357-L361, 1992
451992
1260 nm InGaAs vertical-cavity lasers
C Asplund, P Sundgren, S Mogg, M Hammar, U Christiansson, ...
Electronics Letters 38 (13), 635-636, 2002
432002
Wafer fused heterojunctions
F Salomonsson, K Streubel, J Bentell, M Hammar, D Keiper, ...
Journal of applied physics 83 (2), 768-774, 1998
411998
Suppression of Higher Order Transverse and Oxide Modes in 1.3-m InGaAs VCSELs by an Inverted Surface Relief
E Soderberg, JS Gustavsson, P Modh, A Larsson, Z Zhang, J Berggren, ...
IEEE Photonics Technology Letters 19 (5), 327-329, 2007
392007
Adsorption of tin on the Ge (111)-c (2× 8) surface studied with scanning tunneling microscopy and photoelectron spectroscopy
M Göthelid, TM Grehk, M Hammar, UO Karlsson, SA Flodström
Surface science 328 (1-2), 80-94, 1995
381995
Electronic and geometric structure of clean Pt 3 Ti (111)
W Chen, L Severin, M Göthelid, M Hammar, S Cameron, J Paul
Physical Review B 50 (8), 5620, 1994
381994
Initial growth of silver on Ge (111) studied by scanning tunneling microscopy
M Hammar, M Göthelid, UO Karlsson, SA Flodström
Physical Review B 47 (23), 15669, 1993
381993
Il sistema al momento non puņ eseguire l'operazione. Riprova pił tardi.
Articoli 1–20