Cyclic growth of strain-relaxed islands FK LeGoues, MC Reuter, J Tersoff, M Hammar, RM Tromp
Physical review letters 73 (2), 300, 1994
279 1994 Transfer-printed stacked nanomembrane lasers on silicon H Yang, D Zhao, S Chuwongin, JH Seo, W Yang, Y Shuai, J Berggren, ...
Nature Photonics 6 (9), 615-620, 2012
254 2012 In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si (001) Ge M Hammar, FK LeGoues, J Tersoff, MC Reuter, RM Tromp
Surface science 349 (2), 129-144, 1996
196 1996 Adsorption of Sn onSi (111) 7× 7: reconstructions in the monolayer regime C Törnevik, M Göthelid, M Hammar, UO Karlsson, NG Nilsson, ...
Surface science 314 (2), 179-187, 1994
90 1994 Large-area InP-based crystalline nanomembrane flexible photodetectors W Yang, H Yang, G Qin, Z Ma, J Berggren, M Hammar, R Soref, W Zhou
Applied Physics Letter Vol. 96, page 121107 (2010), 2010
82 2010 High-performance 1.3 µm InGaAs vertical cavity surface emitting lasers P Sundgren, RM von Würtemberg, J Berggren, M Hammar, M Ghisoni, ...
Electronics Letters 39 (15), 1128-1129, 2003
72 2003 Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells J Misiewicz, R Kudrawiec, K Ryczko, G Sęk, A Forchel, JC Harmand, ...
Journal of Physics: Condensed Matter 16 (31), S3071, 2004
71 2004 Relaxation mechanism of Ge islands/Si (001) at low temperature FK LeGoues, J Tersoff, MC Reuter, M Hammar, R Tromp
Applied physics letters 67 (16), 2317-2319, 1995
68 1995 Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning S Mogg, N Chitica, U Christiansson, R Schatz, P Sundgren, C Asplund, ...
IEEE Journal of Quantum Electronics 40 (5), 453-462, 2004
66 2004 Sm-and Yb-induced reconstructions of the Si (111) surface C Wigren, JN Andersen, R Nyholm, M Göthelid, M Hammar, C Törnevik, ...
Physical Review B 48 (15), 11014, 1993
56 1993 Epitaxial growth of Sn on Si(111): A direct atomic-structure determination of the (2 √3 ×2 √3 )R 30° reconstructed surface C Törnevik, M Hammar, NG Nilsson, SA Flodström
Physical Review B 44 (23), 13144, 1991
55 * 1991 In situ TEM study of the growth of Ge on Si (111) FK LeGoues, M Hammar, MC Reuter, RM Tromp
Surface science 349 (3), 249-266, 1996
52 1996 Initial growth of silver on Ge (111) studied by scanning tunneling microscopy M Hammar, M Göthelid, UO Karlsson, SA Flodström
Physical Review B 47 (23), 15669, 1993
49 1993 1260 nm InGaAs vertical-cavity lasers C Asplund, P Sundgren, S Mogg, M Hammar, U Christiansson, ...
Electronics Letters 38 (13), 635-636, 2002
47 2002 Adatom and rest-atom contributions in Ge (111) c (2× 8) and Ge (111)-Sn (7× 7) core-level spectra M Göthelid, TM Grehk, M Hammar, UO Karlsson, SA Flodström
Physical Review B 48 (3), 2012, 1993
47 1993 Wafer fused F Salomonsson, K Streubel, J Bentell, M Hammar, D Keiper, ...
Journal of applied physics 83 (2), 768-774, 1998
46 1998 Sn-induced surface reconstructions on the Ge (111) surface studied with scanning tunneling microscopy M Göthelid, M Hammar, C Törnevik, UO Karlsson, NG Nilsson, ...
Surface science 271 (3), L357-L361, 1992
45 1992 Printed large-area single-mode photonic crystal bandedge surface-emitting lasers on silicon D Zhao, S Liu, H Yang, Z Ma, C Reuterskiöld-Hedlund, M Hammar, ...
Scientific reports 6 (1), 1-6, 2016
44 2016 Suppression of Higher Order Transverse and Oxide Modes in 1.3- E Soderberg, JS Gustavsson, P Modh, A Larsson, Z Zhang, J Berggren, ...
IEEE Photonics Technology Letters 19 (5), 327-329, 2007
42 2007 On-demand generation of entangled photon pairs in the telecom C-band with InAs quantum dots KD Zeuner, KD Jons, L Schweickert, C Reuterskiöld Hedlund, ...
ACS photonics 8 (8), 2337-2344, 2021
41 * 2021 
Weidong ZhouUniversity of Texas at ArlingtonEmail verificata su uta.edu
