John F. Klem
John F. Klem
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Comprehensive analysis of Si-doped (): Theory and experiments
N Chand, T Henderson, J Klem, WT Masselink, R Fischer, YC Chang, ...
Physical Review B 30 (8), 4481, 1984
Comprehensive analysis of Si-doped (): Theory and experiments
N Chand, T Henderson, J Klem, WT Masselink, R Fischer, YC Chang, ...
Physical Review B 30 (8), 4481, 1984
Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 m
KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ...
Electronics Letters 36 (16), 1388-1390, 2000
Time-resolved Raman scattering in GaAs quantum wells
DY Oberli, DR Wake, MV Klein, J Klem, T Henderson, H Morkoc
Physical review letters 59 (6), 696, 1987
Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices
WT Masselink, PJ Pearah, J Klem, CK Peng, H Morkoc, GD Sanders, ...
Physical Review B 32 (12), 8027, 1985
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
R Fischer, WT Masselink, J Klem, T Henderson, TC McGlinn, MV Klein, ...
Journal of Applied Physics 58 (1), 374-381, 1985
InGaAsN/GaAs heterojunction for multi-junction solar cells
SR Kurtz, AA Allerman, JF Klem, ED Jones
US Patent 6,252,287, 2001
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, LM Murray, ...
Applied Physics Letters 101 (9), 092109, 2012
Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
AA Ketterson, WT Masselink, JS Gedymin, J Klem, CK Peng, WF Kopp, ...
IEEE transactions on electron devices 33 (5), 564-571, 1986
Ordering in GaAs1−xSbx grown by molecular beam epitaxy
YE Ihm, N Otsuka, J Klem, H Morkoc
Applied physics letters 51 (24), 2013-2015, 1987
Phased-array sources based on nonlinear metamaterial nanocavities
O Wolf, S Campione, A Benz, AP Ravikumar, S Liu, TS Luk, EA Kadlec, ...
Nature communications 6 (1), 1-6, 2015
Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
R Fischer, T Henderson, J Klem, WT Masselink, W Kopp, H Morkoc, ...
Electronics Letters 20 (22), 945-947, 1984
Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
R Fischer, J Klem, TJ Drummond, RE Thorne, W Kopp, H Morkoc, AY Cho
Journal of Applied Physics 54 (5), 2508-2510, 1983
OC-48 capable InGaAsN vertical cavity lasers
AW Jackson, RL Naone, MJ Dalberth, JM Smith, KJ Malone, DW Kisker, ...
Electronics Letters 37 (6), 355-356, 2001
Conductance modulation in double quantum wells due to magnetic field-induced anticrossing
JA Simmons, SK Lyo, NE Harff, JF Klem
Physical review letters 73 (16), 2256, 1994
Optical properties of GaAs on (100) Si using molecular beam epitaxy
WT Masselink, T Henderson, J Klem, R Fischer, P Pearah, H Morkoc, ...
Applied physics letters 45 (12), 1309-1311, 1984
Use of a superlattice to enhance the interface properties between two bulk heterolayers
TJ Drummond, J Klem, D Arnold, R Fischer, RE Thorne, WG Lyons, ...
Applied Physics Letters 42 (7), 615-617, 1983
On the collapse of drain IV characteristics in modulation-doped FET's at cryogenic temperatures
R Fischer, TJ Drummond, J Klem, W Kopp, TS Henderson, D Perrachione, ...
IEEE Transactions on Electron Devices 31 (8), 1028-1032, 1984
Electron heating in a multiple-quantum-well structure below 1 K
AKM Wennberg, SN Ytterboe, CM Gould, HM Bozler, J Klem, H Morkoc
Physical Review B 34 (6), 4409, 1986
Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy
SR Kurtz, JF Klem, AA Allerman, RM Sieg, CH Seager, ED Jones
Applied physics letters 80 (8), 1379-1381, 2002
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