Segui
ND Akhavan
Titolo
Citata da
Citata da
Anno
Nanowire transistors without junctions
JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ...
Nature nanotechnology 5 (3), 225-229, 2010
27012010
Junctionless multigate field-effect transistor
CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, JP Colinge
Applied Physics Letters 94 (5), 2009
12702009
Junctionless Nanowire Transistor (JNT): Properties and design guidelines
A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, P Razavi, ...
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010
673*2010
Junctionless nanowire transistor (JNT): properties and design guidelines
A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, P Razavi, ...
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010
673*2010
Performance estimation of junctionless multigate transistors
CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge
Solid-State Electronics 54 (2), 97-103, 2010
6232010
High-temperature performance of silicon junctionless MOSFETs
CW Lee, A Borne, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, ...
IEEE transactions on electron devices 57 (3), 620-625, 2010
4372010
Reduced electric field in junctionless transistors
JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (7), 2010
3722010
Junctionless Multiple Gate Transistors Performance for Analog Applications
RT Doria, MA Pavanello, CW Lee, I Ferain, N Dehdashti, JP Colinge
Proceedings EUROSOI Conference, 79-80, 2010
278*2010
Junctionless multiple-gate transistors for analog applications
RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ...
IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011
2772011
Low subthreshold slope in junctionless multigate transistors
CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (10), 2010
2752010
SOI gated resistor: CMOS without junctions
JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ...
2009 IEEE International SOI Conference, 1-2, 2009
1832009
Junctionless transistors: physics and properties
JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ...
Semiconductor-on-insulator materials for nanoelectronics applications, 187-200, 2011
1412011
Mercury (II) selective sensors based on AlGaN/GaN transistors
M Asadnia, M Myers, ND Akhavan, K O'Donnell, GA Umana-Membreno, ...
Analytica chimica acta 943, 1-7, 2016
782016
Engineering the bandgap of unipolar HgCdTe-based nBn infrared photodetectors
M Kopytko, J Wróbel, K Jóźwikowski, A Rogalski, J Antoszewski, ...
Journal of Electronic Materials 44, 158-166, 2015
662015
Mobility improvement in nanowire junctionless transistors by uniaxial strain
JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ...
Applied Physics Letters 97 (4), 2010
582010
Mobility Improvement in Nanowire Junctionless Transistors by Uniaxial Strain
JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, N Dehdashti, R Yan, ...
SOI Conference, 2009 IEEE International, 2010
582010
Junctionless 6T SRAM cell
A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ...
Electronics letters 46 (22), 1491-1493, 2010
572010
Improvement of carrier ballisticity in junctionless nanowire transistors
N Dehdashti Akhavan, I Ferain, P Razavi, R Yu, JP Colinge
Applied Physics Letters 98 (10), 2011
532011
Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions
JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ...
Science of Advanced Materials 3 (3), 477-482, 2011
522011
Random telegraph-signal noise in junctionless transistors
AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge
Applied Physics Letters 98 (9), 2011
462011
Il sistema al momento non puň eseguire l'operazione. Riprova piů tardi.
Articoli 1–20