Meng-Fan Chang
Title
Cited by
Cited by
Year
A 4Mb embedded SLC resistive-RAM macro with 7.2 ns read-write random-access time and 160ns MLC-access capability
SS Sheu, MF Chang, KF Lin, CW Wu, YS Chen, PF Chiu, CC Kuo, ...
2011 IEEE International Solid-State Circuits Conference, 200-202, 2011
2372011
A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors
WH Chen, KX Li, WY Lin, KH Hsu, PY Li, CH Yang, CX Xue, EY Yang, ...
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 494-496, 2018
1442018
A 130 mV SRAM with expanded write and read margins for subthreshold applications
MF Chang, SW Chang, PW Chou, WC Wu
IEEE Journal of Solid-State Circuits 46 (2), 520-529, 2010
1422010
Low store energy, low VDDmin, 8T2R nonvolatile latch and SRAM with vertical-stacked resistive memory (memristor) devices for low power mobile applications
PF Chiu, MF Chang, CW Wu, CH Chuang, SS Sheu, YS Chen, MJ Tsai
IEEE Journal of Solid-State Circuits 47 (6), 1483-1496, 2012
1312012
A 65nm 4Kb algorithm-dependent computing-in-memory SRAM unit-macro with 2.3 ns and 55.8 TOPS/W fully parallel product-sum operation for binary DNN edge processors
WS Khwa, JJ Chen, JF Li, X Si, EY Yang, X Sun, R Liu, PY Chen, Q Li, ...
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 496-498, 2018
1242018
Fast-write resistive RAM (RRAM) for embedded applications
SS Sheu, KH Cheng, MF Chang, PC Chiang, WP Lin, HY Lee, PS Chen, ...
IEEE Design & Test of Computers 28 (1), 64-71, 2010
1202010
Ambient energy harvesting nonvolatile processors: From circuit to system
Y Liu, Z Li, H Li, Y Wang, X Li, K Ma, S Li, MF Chang, S John, Y Xie, J Shu, ...
Proceedings of the 52nd Annual Design Automation Conference, 1-6, 2015
1192015
A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications
PF Chiu, MF Chang, SS Sheu, KF Lin, PC Chiang, CW Wu, WP Lin, ...
2010 Symposium on VLSI Circuits, 229-230, 2010
1102010
Differential sensing and TSV timing control scheme for 3D-IC
WC Wu, YH Chen, MF Chang
US Patent 7,969,193, 2011
1092011
24.1 a 1Mb multibit ReRAM computing-in-memory macro with 14.6 ns parallel MAC computing time for CNN based AI edge processors
CX Xue, WH Chen, JS Liu, JF Li, WY Lin, WE Lin, JH Wang, WC Wei, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 388-390, 2019
1082019
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme
MF Chang, JJ Wu, TF Chien, YC Liu, TC Yang, WC Shen, YC King, CJ Lin, ...
2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014
1072014
24.5 A twin-8T SRAM computation-in-memory macro for multiple-bit CNN-based machine learning
X Si, JJ Chen, YN Tu, WH Huang, JH Wang, YC Chiu, WC Wei, SY Wu, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 396-398, 2019
1012019
Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC
MF Chang, PF Chiu, SS Sheu
16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011), 197-203, 2011
962011
4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination …
Y Liu, Z Wang, A Lee, F Su, CP Lo, Z Yuan, CC Lin, Q Wei, Y Wang, ...
2016 IEEE International Solid-State Circuits Conference (ISSCC), 84-86, 2016
872016
A 0.5 V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time
MF Chang, CW Wu, CC Kuo, SJ Shen, KF Lin, SM Yang, YC King, CJ Lin, ...
2012 IEEE International Solid-State Circuits Conference, 434-436, 2012
852012
A Large V/VDD Tolerant Zigzag 8T SRAM With Area-Efficient Decoupled Differential Sensing and Fast Write-Back Scheme
JJ Wu, YH Chen, MF Chang, PW Chou, CY Chen, HJ Liao, MB Chen, ...
IEEE Journal of Solid-State Circuits 46 (4), 815-827, 2011
832011
An offset-tolerant fast-random-read current-sampling-based sense amplifier for small-cell-current nonvolatile memory
MF Chang, SJ Shen, CC Liu, CW Wu, YF Lin, YC King, CJ Lin, HJ Liao, ...
IEEE Journal of Solid-State Circuits 48 (3), 864-877, 2013
822013
Nonvolatile memory design based on ferroelectric FETs
S George, K Ma, A Aziz, X Li, A Khan, S Salahuddin, MF Chang, S Datta, ...
2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC), 1-6, 2016
782016
Three-dimensional 4F2ReRAM cell with CMOS logic compatible process
CH Wang, YH Tsai, KC Lin, MF Chang, YC King, CJ Lin, SS Sheu, ...
2010 International Electron Devices Meeting, 29.6. 1-29.6. 4, 2010
742010
A high-speed 7.2-ns read-write random access 4-Mb embedded resistive RAM (ReRAM) macro using process-variation-tolerant current-mode read schemes
MF Chang, SS Sheu, KF Lin, CW Wu, CC Kuo, PF Chiu, YS Yang, ...
IEEE Journal of Solid-State Circuits 48 (3), 878-891, 2012
702012
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