Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub- freestanding Pt nanowires S Frabboni, GC Gazzadi, L Felisari, A Spessot Applied physics letters 88 (21), 213116, 2006 | 78 | 2006 |
Device exploration of nanosheet transistors for sub-7-nm technology node D Jang, D Yakimets, G Eneman, P Schuddinck, MG Bardon, P Raghavan, ... IEEE Transactions on Electron Devices 64 (6), 2707-2713, 2017 | 71 | 2017 |
Method for tuning the effective work function of a gate structure in a semiconductor device T Kauerauf, A Spessot, C Caillat US Patent 9,076,726, 2015 | 69 | 2015 |
Vertically stacked gate-all-around Si nanowire transistors: Key process optimizations and ring oscillator demonstration H Mertens, R Ritzenthaler, V Pena, G Santoro, K Kenis, A Schulze, ... 2017 IEEE International Electron Devices Meeting (IEDM), 37.4. 1-37.4. 4, 2017 | 50 | 2017 |
System and method for current sensing R Goodfellow, D Susak US Patent 6,559,684, 2003 | 50 | 2003 |
Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI G Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ... IEEE Transactions on Nanotechnology 17 (6), 1259-1269, 2018 | 39 | 2018 |
Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires MG Bardon, Y Sherazi, P Schuddinck, D Jang, D Yakimets, P Debacker, ... 2016 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2016 | 38 | 2016 |
Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories M Rizzi, A Spessot, P Fantini, D Ielmini Applied Physics Letters 99 (22), 223513, 2011 | 37 | 2011 |
TEM study of annealed Pt nanostructures grown by electron beam-induced deposition S Frabboni, GC Gazzadi, A Spessot Physica E: Low-dimensional Systems and Nanostructures 37 (1-2), 265-269, 2007 | 37 | 2007 |
Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology D Yakimets, MG Bardon, D Jang, P Schuddinck, Y Sherazi, P Weckx, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2017 | 35 | 2017 |
The FAST module: An add-on unit for driving commercial scanning probe microscopes at video rate and beyond F Esch, C Dri, A Spessot, C Africh, G Cautero, D Giuressi, R Sergo, ... Review of Scientific Instruments 82 (5), 053702, 2011 | 29 | 2011 |
Variability effects on the VT distribution of nanoscale NAND Flash memories A Spessot, A Calderoni, P Fantini, AS Spinelli, CM Compagnoni, F Farina, ... 2010 IEEE International Reliability Physics Symposium, 970-974, 2010 | 29 | 2010 |
Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node S Sakhare, M Perumkunnil, TH Bao, S Rao, W Kim, D Crotti, F Yasin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.3. 1-18.3. 4, 2018 | 24 | 2018 |
Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels E Bury, B Kaczer, D Linten, L Witters, H Mertens, N Waldron, X Zhou, ... 2016 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2016 | 24 | 2016 |
Low track height standard cell design in iN7 using scaling boosters SMY Sherazi, C Jha, D Rodopoulos, P Debacker, B Chava, L Matti, ... Design-Process-Technology Co-optimization for Manufacturability XI 10148 …, 2017 | 22 | 2017 |
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high‐order Laue zone line profiles A Spessot, S Frabboni, R Balboni, A Armigliato Journal of microscopy 226 (2), 140-155, 2007 | 20 | 2007 |
Transmission electron microscopy characterization and sculpting of sub- Si–O–C freestanding nanowires grown by electron beam induced deposition S Frabboni, GC Gazzadi, A Spessot Applied physics letters 89 (11), 113108, 2006 | 18 | 2006 |
An analysis of temperature impact on MOSFET mismatch S Mennillo, A Spessot, L Vendrame, L Bortesi 2009 IEEE International Conference on Microelectronic Test Structures, 56-61, 2009 | 17 | 2009 |
Low-power DRAM-compatible replacement gate high-k/metal gate stacks R Ritzenthaler, T Schram, E Bury, A Spessot, C Caillat, V Srividya, ... Solid-state electronics 84, 22-27, 2013 | 15 | 2013 |
Compact modeling of variability effects in nanoscale NAND flash memories A Spessot, CM Compagnoni, F Farina, A Calderoni, AS Spinelli, P Fantini IEEE transactions on electron devices 58 (8), 2302-2309, 2011 | 15 | 2011 |