Connor J. McClellan
Connor J. McClellan
Verified email at stanford.edu - Homepage
Title
Cited by
Cited by
Year
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2
CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee
Acs Nano 9 (1), 363-370, 2015
1332015
Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...
Nano Letters 17 (6), 3429-3433, 2017
952017
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E Yalon, OB Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...
ACS applied materials & interfaces 9 (49), 43013-43020, 2017
612017
Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2
L Cai, CJ McClellan, AL Koh, H Li, E Yalon, E Pop, X Zheng
Nano letters 17 (6), 3854-3861, 2017
442017
Unipolar n-type black phosphorus transistors with low work function contacts
CH Wang, JAC Incorvia, CJ McClellan, AC Yu, MJ Mleczko, E Pop, ...
Nano Letters 18 (5), 2822-2827, 2018
272018
An electrochemical thermal transistor
A Sood, F Xiong, S Chen, H Wang, D Selli, J Zhang, CJ McClellan, J Sun, ...
Nature communications 9 (1), 1-9, 2018
232018
Effective n-type doping of monolayer MoS2by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
162017
Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms
CM Corbet, C McClellan, K Kim, S Sonde, E Tutuc, SK Banerjee
ACS nano 8 (10), 10480-10485, 2014
162014
Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements
IM Datye, AJ Gabourie, CD English, KKH Smithe, CJ McClellan, NC Wang, ...
2D Materials 6 (1), 011004, 2018
112018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
S Vaziri, E Yalon, MM Rojo, SV Suryavanshi, H Zhang, CJ McClellan, ...
Science advances 5 (8), eaax1325, 2019
82019
Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors
E Barré, JAC Incorvia, SH Kim, CJ McClellan, E Pop, HSP Wong, ...
Nano Letters 19 (2), 770-774, 2019
72019
3D Monolithic Stacked 1T1R cells using Monolayer MoS2 FET and hBN RRAM Fabricated at Low (150°C) Temperature
CH Wang, C McClellan, Y Shi, X Zheng, V Chen, M Lanza, E Pop, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2018
52018
Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors
A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee
Applied Physics Letters 104 (8), 083106, 2014
52014
Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube
SM Bohaichuk, M Muñoz Rojo, G Pitner, CJ McClellan, F Lian, J Li, ...
ACS nano 13 (10), 11070-11077, 2019
42019
Fast Spiking of a Mott VO2–Carbon Nanotube Composite Device
SM Bohaichuk, S Kumar, G Pitner, CJ McClellan, J Jeong, MG Samant, ...
Nano letters 19 (10), 6751-6755, 2019
32019
Direct observation of power dissipation in monolayer MoS2 devices
E Yalon, CJ Mcclellan, KKH Smithe, YC Shin, R Xu, E Pop
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
22016
Sub-Thermionic Steep Switching in Hole-Doped WSe2 Transistors
CJ McClellan, E Yalon, L Cai, S Suryavanshi, X Zheng, E Pop
2018 76th Device Research Conference (DRC), 1-2, 2018
12018
Near-room temperature electrical control of spin and valley Hall effect in monolayer WSe2transistors for spintronic applications
JA Incorvia, E Barre, SH Kim, C McClellan, E Pop, HSP Wong, T Heinz
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep …, 2017
12017
WTe2as a two-dimensional (2D) metallic contact for 2D semiconductors
CJ Mcclellan, MJ Mleczko, KKH Smithe, Y Nishi, E Pop
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
12016
An electrochemical thermal transistor (vol 9, 4510, 2018)
A Sood, F Xiong, S Chen, H Wang, D Selli, J Zhang, CJ McClellan, J Sun, ...
NATURE COMMUNICATIONS 10, 2019
2019
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