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Leonard Feldman
Leonard Feldman
Professor of Physics and Materials Science
Verified email at rutgers.edu
Title
Cited by
Cited by
Year
Fundamentals of surface and thin film analysis
LC Feldman, JW Mayer
North Holland, Elsevier Science Publishers, P. O. Box 211, 1000 AE Amsterdam …, 1986
20541986
Materials analysis by ion channeling: submicron crystallography
LC Feldman, JW Mayer, STA Picraux
Academic Press, 2012
16052012
GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984
10321984
Electronic thin film science: for electrical engineers and materials scientists
JW Mayer, LC Feldman
Prentice Hall, 1992
9681992
Clustering on surfaces
M Zinke-Allmang, LC Feldman, MH Grabow
Surface Science Reports 16 (8), 377-463, 1992
8101992
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...
IEEE Electron Device Letters 22 (4), 176-178, 2001
7592001
The analysis of 51 genes in DSM-IV combined type attention deficit hyperactivity disorder: association signals in DRD4, DAT1 and 16 other genes
K Brookes, X Xu, W Chen, K Zhou, B Neale, N Lowe, R Aneey, B Franke, ...
Molecular psychiatry 11 (10), 934-953, 2006
6722006
Equilibrium shape of Si
DJ Eaglesham, AE White, LC Feldman, N Moriya, DC Jacobson
Physical Review Letters 70 (11), 1643, 1993
6411993
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...
Applied Physics Letters 76 (13), 1713-1715, 2000
5492000
Observation of long-range exciton diffusion in highly ordered organic semiconductors
H Najafov, B Lee, Q Zhou, LC Feldman, V Podzorov
Nature materials 9 (11), 938-943, 2010
4942010
Structurally induced optical transitions in Ge-Si superlattices
TP Pearsall, J Bevk, LC Feldman, JM Bonar, JP Mannaerts, A Ourmazd
Physical review letters 58 (7), 729, 1987
4131987
Size effects in the structural phase transition of nanoparticles
R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr
Physical Review B 65 (22), 224113, 2002
4082002
Semiconductor to metal phase transition in the nucleation and growth of nanoparticles and thin films
JY Suh, R Lopez, LC Feldman, RF Haglund Jr
Journal of Applied Physics 96 (2), 1209-1213, 2004
3782004
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman
Applied Physics Letters 59 (13), 1611-1613, 1991
3501991
Homogeneously Alloyed CdSxSe1-x Nanocrystals:  Synthesis, Characterization, and Composition/Size-Dependent Band Gap
LA Swafford, LA Weigand, MJ Bowers, JR McBride, JL Rapaport, TL Watt, ...
Journal of the American Chemical Society 128 (37), 12299-12306, 2006
3492006
Citizens without shelter
LC Feldman
Citizens without Shelter, 2018
3342018
Pseudomorphic growth of GexSi1x on silicon by molecular beam epitaxy
JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch
Applied Physics Letters 44 (1), 102-104, 1984
3301984
Positron-annihilation momentum profiles in aluminum: core contribution and the independent-particle model
KG Lynn, JR MacDonald, RA Boie, LC Feldman, JD Gabbe, MF Robbins, ...
Physical Review Letters 38 (5), 241, 1977
3231977
Synthesis, surface studies, composition and structural characterization of CdSe, core/shell and biologically active nanocrystals
SJ Rosenthal, J McBride, SJ Pennycook, LC Feldman
Surface science reports 62 (4), 111-157, 2007
2862007
Modified Deal Grove model for the thermal oxidation of silicon carbide
Y Song, S Dhar, LC Feldman, G Chung, JR Williams
Journal of Applied Physics 95 (9), 4953-4957, 2004
2852004
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