| A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation F Bonani, SD Guerrieri, G Ghione, M Pirola IEEE Transactions on Electron Devices 48 (5), 966-977, 2001 | 83 | 2001 |
| K-band GaAs MMIC Doherty power amplifier for microwave radio with optimized driver R Quaglia, V Camarchia, T Jiang, M Pirola, SD Guerrieri, B Loran IEEE Transactions on Microwave Theory and Techniques 62 (11), 2518-2525, 2014 | 75 | 2014 |
| A frequency‐domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential‐algebraic equations FL Traversa, F Bonani, SD Guerrieri International Journal of Circuit Theory and Applications 36 (4), 421-439, 2008 | 65 | 2008 |
| Self-consistent electrothermal modeling of class A, AB, and B power GaN HEMTs under modulated RF excitation V Camarchia, F Cappelluti, M Pirola, SD Guerrieri, G Ghione IEEE Transactions on Microwave Theory and Techniques 55 (9), 1824-1831, 2007 | 59 | 2007 |
| Noise source modeling for cyclostationary noise analysis in large-signal device operation F Bonani, SD Guerrieri, G Ghione IEEE Transactions on Electron Devices 49 (9), 1640-1647, 2002 | 51 | 2002 |
| Physics-based simulation techniques for small-and large-signal device noise analysis in RF applications F Bonani, SD Guerrieri, G Ghione IEEE Transactions on Electron Devices 50 (3), 633-644, 2003 | 49 | 2003 |
| A unified approach to the sensitivity and variability physics-based modeling of semiconductor devices operated in dynamic conditions—Part I: Large-signal sensitivity SD Guerrieri, F Bonani, F Bertazzi, G Ghione IEEE Transactions on Electron Devices 63 (3), 1195-1201, 2016 | 35 | 2016 |
| Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices F Bertazzi, F Cappelluti, SD Guerrieri, F Bonani, G Ghione IEEE transactions on microwave theory and techniques 54 (4), 1611-1618, 2006 | 30 | 2006 |
| Physics-based RF noise modeling of submicron MOSFETs S Donati, MA Alam, KS Krisch, S Martin, MR Pinto, HH Vuong, F Bonani, ... International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 28 | 1998 |
| Real-time FPGA-based baseband predistortion of W-CDMA 3GPP high-efficiency power amplifiers: Comparing GaN HEMT and Si LDMOS predistorted PA performances R Quaglia, V Camarchia, SD Guerrieri, EG Lima, G Ghione, Q Luo, ... 2009 European Microwave Conference (EuMC), 342-345, 2009 | 26 | 2009 |
| Concurrent efficient evaluation of small-change parameters and Green’s functions for TCAD device noise and variability analysis SD Guerrieri, M Pirola, F Bonani IEEE Transactions on Electron Devices 64 (3), 1269-1275, 2017 | 25 | 2017 |
| Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high‐power applications V Camarchia, SD Guerrieri, M Pirola, V Teppati, A Ferrero, G Ghione, ... International Journal of RF and Microwave Computer‐Aided Engineering: Co …, 2006 | 24 | 2006 |
| Multi-gate FinFET mixer variability assessment through physics-based simulation AM Bughio, SD Guerrieri, F Bonani, G Ghione IEEE Electron Device Letters 38 (8), 1004-1007, 2017 | 22 | 2017 |
| 3.5 GHz WiMAX GaN Doherty power amplifier with second harmonic tuning J Fang, J Moreno, R Quaglia, V Camarchia, M Pirola, SD Guerrieri, ... Microwave and Optical Technology Letters 54 (11), 2601-2605, 2012 | 22 | 2012 |
| A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications JM Rubio, J Fang, R Quaglia, V Camarchia, M Pirola, SD Guerrieri, ... 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits …, 2011 | 22 | 2011 |
| Large-signal stability of symmetric multibranch power amplifiers exploiting Floquet analysis F Cappelluti, FL Traversa, F Bonani, SD Guerrieri, G Ghione IEEE transactions on microwave theory and techniques 61 (4), 1580-1587, 2013 | 21 | 2013 |
| Efficient sensitivity and variability analysis of nonlinear microwave stages through concurrent TCAD and EM modeling SD Guerrieri, C Ramella, F Bonani, G Ghione IEEE Journal on Multiscale and Multiphysics Computational Techniques 4, 356-363, 2019 | 20 | 2019 |
| Linking X parameters to physical simulations for design-oriented large-signal device variability modeling SD Guerrieri, F Bonani, G Ghione 2019 IEEE MTT-S International Microwave Symposium (IMS), 204-207, 2019 | 20 | 2019 |
| Developments in predistortion and feedforward adaptive power amplifier linearisers M O'Droma, E Bertran, M Gadringer, S Donati, A Zhu, PL Gilabert, ... European Gallium Arsenide and Other Semiconductor Application Symposium …, 2005 | 19 | 2005 |
| Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models F Bonani, SD Guerrieri, F Filicori, G Ghione, M Pirola IEEE transactions on microwave theory and techniques 45 (5), 846-855, 1997 | 19 | 1997 |
Giovanni GhioneProfessore ordinario di elettronica, Politecnico di TorinoVerified email at polito.it
