On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
411 2008 Ion-implantation issues in the formation of shallow junctions in germanium E Simoen, A Satta, A D’Amore, T Janssens, T Clarysse, K Martens, ...
Materials science in semiconductor processing 9 (4-5), 634-639, 2006
143 2006 Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...
Applied physics letters 91 (13), 133510, 2007
130 2007 Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
International Electron Devices Meeting-IEDM, 1-4, 2008
129 2008 Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, F Leys, G Hellings, K Martens, G Eneman, ...
International Electron Devices Meeting-IEDM, 873-876, 2008
129 2008 High-performance deep submicron Ge pMOSFETs with halo implants G Nicholas, B De Jaeger, DP Brunco, P Zimmerman, G Eneman, ...
IEEE Transactions on Electron Devices 54 (9), 2503-2511, 2007
113 2007 Capacitance-voltage characterization of G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...
Applied Physics Letters 93 (18), 183504, 2008
106 2008 Semiconductor-metal transition in thin G Rampelberg, M Schaekers, K Martens, Q Xie, D Deduytsche, ...
Applied Physics Letters 98 (16), 162902, 2011
96 2011 New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development K Martens, B De Jaeger, R Bonzom, J Van Steenbergen, M Meuris, ...
IEEE electron device letters 27 (5), 405-408, 2006
89 2006 The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces HC Lin, G Brammertz, K Martens, G de Valicourt, L Negre, WE Wang, ...
Applied physics letters 94 (15), 153508, 2009
76 2009 Electrical properties of III-V/oxide interfaces G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
71 2009 The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs MR Caymax, F Leys, J Mitard, K Martens, L Yang, G Pourtois, ...
ECS Transactions 19 (1), 183, 2009
70 2009 Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS CV and GV characteristics K Martens, W Wang, K De Keersmaecker, G Borghs, G Groeseneken, ...
Microelectronic engineering 84 (9-10), 2146-2149, 2007
70 2007 Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution D Lin, G Brammertz, S Sioncke, C Fleischmann, A Delabie, K Martens, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
67 2009 Interface control of high-k gate dielectrics on Ge M Caymax, M Houssa, G Pourtois, F Bellenger, K Martens, A Delabie, ...
Applied surface science 254 (19), 6094-6099, 2008
67 2008 J. Penaud, C. Adelmann, S. Sioncke, W.-E. Wang, M. Caymax, M. Meuris, and MM Heyns G Brammertz, HC Lin, K Martens, D Mercier, C Merckling
J. Electrochem. Soc 155, H945, 2008
64 2008 Thin epitaxial Si films as a passivation method for Ge (1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality FE Leys, R Bonzom, B Kaczer, T Janssens, W Vandervorst, B De Jaeger, ...
Materials science in semiconductor processing 9 (4-5), 679-684, 2006
60 2006 Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53 Ga0.47 As devices with Al2 O3 J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ...
2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014
57 2014 Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control AP Peter, K Martens, G Rampelberg, M Toeller, JM Ablett, J Meersschaut, ...
Advanced Functional Materials 25 (5), 679-686, 2015
53 2015 Materials and electrical characterization of molecular beam deposited DP Brunco, A Dimoulas, N Boukos, M Houssa, T Conard, K Martens, ...
Journal of Applied Physics 102 (2), 024104, 2007
52 2007 
Guy BrammertzPrincipal Scientist, imec-imomecEmail verificata su imec.be
