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Dr. Nandakishor Yadav
Dr. Nandakishor Yadav
Other namesNand kishore yadav
Fraunhofer Institute fo Photonics Microsystems
Verified email at ipms.fraunhofer.de - Homepage
Title
Cited by
Cited by
Year
Stable, reliable, and bit-interleaving 12T SRAM for space applications: A device circuit co-design
N Yadav, AP Shah, SK Vishvakarma
IEEE Transactions on Semiconductor Manufacturing 30 (3), 276-284, 2017
552017
A novel FPGA accelerator design for real-time and ultra-low power deep convolutional neural networks compared with titan X GPU
S Li, Y Luo, K Sun, N Yadav, KK Choi
IEEE Access 8, 105455-105471, 2020
472020
On-chip Adaptive Body Bias for Reducing the Impact of NBTI on 6T SRAM Cells
AP Shah, N Yadav, SK Vishvakerma
IEEE Transactions on Semiconductor Manufacturing 31 (2), 1-8, 2018
462018
A comprehensive survey of fake news in social networks: Attributes, features, and detection approaches
MR Kondamudi, SR Sahoo, L Chouhan, N Yadav
Journal of King Saud University-Computer and Information Sciences 35 (6), 101571, 2023
232023
Process variation and NBTI resilient Schmitt trigger for stable and reliable circuits
AP Shah, N Yadav, A Beohar, SK Vishvakarma
IEEE Transactions on Device and Materials Reliability 18 (4), 546-554, 2018
232018
An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells
AP Shah, N Yadav, A Beohar, SK Vishvakarma
Microelectronics Reliability 87, 15-23, 2018
192018
Systematically Optimized Ketoprofen-Loaded Novel Proniosomal Formulation for Periodontitis: In Vitro Characterization and In Vivo Pharmacodynamic Evaluation
NK Yadav, S Nanda, G Sharma, OP Katare
AAPS PharmSciTech 18, 1863-1880, 2017
192017
Low-power RTL code generation for advanced CNN algorithms toward object detection in autonomous vehicles
Y Kim, H Kim, N Yadav, S Li, KK Choi
Electronics 9 (3), 478, 2020
182020
Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications
A Beohar, N Yadav, AP Shah, SK Vishvakarma
Journal of Computational Electronics 17 (4), 1650-1657, 2018
182018
Ultra-low power and high-throughput SRAM design to enhance AI computing ability in autonomous vehicles
Y Kim, S Patel, H Kim, N Yadav, KK Choi
Electronics 10 (3), 256, 2021
152021
Analysis of trap‐assisted tunnelling in asymmetrical underlap 3D‐cylindrical GAA‐TFET based on hetero‐spacer engineering for improved device reliability
A Beohar, N Yadav, SK Vishvakarma
Micro & Nano Letters 12 (12), 982-986, 2017
152017
Novel CNN-based AP2D-net accelerator: An area and power efficient solution for real-time applications on mobile FPGA
S Li, K Sun, Y Luo, N Yadav, K Choi
Electronics 9 (5), 832, 2020
122020
Double-gate FinFET process variation aware 10T SRAM cell topology design and analysis
N Yadav, S Dutt, M Pattnaik, GK Sharma
2013 European Conference on Circuit Theory and Design (ECCTD), 1-4, 2013
112013
SPICE compatible semi-empirical compact model for ferroelectric hysteresis
M Lederer, R Olivo, N Yadav, S De, K Seidel, LM Eng, T Kämpfe
Solid-State Electronics 199, 108501, 2023
92023
NBTI aware IG-FinFET based SRAM design using adaptable trip-point sensing technique
N Yadav, S Jain, M Pattanaik, GK Sharma
Proceedings of the 2014 IEEE/ACM International Symposium on Nanoscale …, 2014
92014
Design of a voltage to time converter with high conversion gain for reliable and secure autonomous vehicles
N Yadav, Y Kim, M Alashi, K Ken Choi
Electronics 9 (3), 384, 2020
82020
NMOS only Schmitt trigger circuit for NBTI resilient CMOS circuits
AP Shah, N Yadav, A Beohar, SK Vishvakarma
Electronics Letters 54 (14), 868-870, 2018
82018
SUBHDIP: process variations tolerant subthreshold Darlington pair‐based NBTI sensor circuit
AP Shah, N Yadav, A Beohar, SK Vishvakarma
IET Computers & Digital Techniques 13 (3), 243-249, 2019
62019
A new sensitivity-driven process variation aware self-repairing low-power SRAM design
N Yadav, S Dutt, GK Sharma
2014 27th International Conference on VLSI Design and 2014 13th …, 2014
62014
Semi-empirical and verilog-a compatible compact model for ferroelectric hysteresis behavior
M Lederer, R Olivo, N Yadav, S De, K Seidel, LM Eng, T Kampfe
International Conference on Simulation of Semiconductor Processes and …, 2022
52022
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