Observation of native Ga vacancies in GaN by positron annihilation K Saarinen, T Laine, S Kuisma, J Nissilä, P Hautojärvi, L Dobrzynski, ...
MRS Online Proceedings Library (OPL) 482, 757, 1997
623 1997 Graphene epitaxy by chemical vapor deposition on SiC W Strupinski, K Grodecki, A Wysmolek, R Stepniewski, T Szkopek, ...
Nano letters 11 (4), 1786-1791, 2011
401 2011 Exciton region reflectance of homoepitaxial GaN layers KP Korona, A Wysmol/ek, K Pakul/a, R Stepniewski, JM Baranowski, ...
Applied physics letters 69 (6), 788-790, 1996
195 1996 Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates K Pakuła, A Wysmołek, KP Korona, JM Baranowski, R Stępniewski, ...
Solid state communications 97 (11), 919-922, 1996
169 1996 Polariton effects in reflectance and emission spectra of homoepitaxial GaN R Stȩpniewski, KP Korona, A Wysmołek, JM Baranowski, K Pakuła, ...
Physical Review B 56 (23), 15151, 1997
106 * 1997 Auger recombination within Landau levels in a two-dimensional electron gas M Potemski, R Stepniewski, JC Maan, G Martinez, P Wyder, B Etienne
Physical review letters 66 (17), 2239, 1991
84 1991 Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC (0001) J Borysiuk, R Bożek, W Strupiński, A Wysmołek, K Grodecki, ...
Journal of Applied Physics 105 (2), 2009
80 2009 Recombination of excitons bound to oxygen and silicon donors in freestanding GaN A Wysmolek, KP Korona, R Stȩpniewski, JM Baranowski, J Błoniarz, ...
Physical Review B 66 (24), 245317, 2002
71 2002 Quasiclassical cyclotron resonance of Dirac fermions in highly doped graphene AM Witowski, M Orlita, R Stȩpniewski, A Wysmołek, JM Baranowski, ...
Physical Review B 82 (16), 165305, 2010
67 2010 The chemical vapour transport growth of ZnO single crystals A Mycielski, L Kowalczyk, A Szadkowski, B Chwalisz, A Wysmołek, ...
Journal of alloys and compounds 371 (1-2), 150-152, 2004
67 2004 Symmetry of excitons in GaN R Stȩpniewski, M Potemski, A Wysmołek, K Pakuła, JM Baranowski, ...
Physical Review B 60 (7), 4438, 1999
64 1999 Role of structure of C-terminated -SiC( ) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies J Borysiuk, J Sołtys, R Bożek, J Piechota, S Krukowski, W Strupiński, ...
Physical Review B 85 (4), 045426, 2012
53 2012 Growth kinetics of epitaxial graphene on SiC substrates A Drabińska, K Grodecki, W Strupiński, R Bożek, KP Korona, A Wysmołek, ...
Physical Review B 81 (24), 245410, 2010
47 2010 Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC J Borysiuk, R Bożek, K Grodecki, A Wysmołek, W Strupiński, ...
Journal of Applied Physics 108 (1), 2010
46 2010 Structural and optical properties of homoepitaxial GaN layers JM Baranowski, Z Liliental-Weber, K Korona, K Pakuła, R Stępniewski, ...
MRS Online Proceedings Library (OPL) 449, 393, 1996
40 1996 Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001) M Tokarczyk, G Kowalski, M Możdżonek, J Borysiuk, R Stępniewski, ...
Applied Physics Letters 103 (24), 2013
36 2013 Electronic structure of commensurate, nearly commensurate, and incommensurate phases of by angle-resolved photoelectron spectroscopy, scanning … I Lutsyk, M Rogala, P Dabrowski, P Krukowski, PJ Kowalczyk, ...
Physical Review B 98 (19), 195425, 2018
35 2018 Micro-Raman spectroscopy of graphene grown on stepped 4H-SiC (0001) surface K Grodecki, R Bozek, W Strupinski, A Wysmolek, R Stepniewski, ...
Applied Physics Letters 100 (26), 2012
33 2012 Fine structure of effective mass acceptors in gallium nitride R Stȩpniewski, A Wysmołek, M Potemski, K Pakuła, JM Baranowski, ...
Physical review letters 91 (22), 226404, 2003
32 2003 Impurity‐Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields R Stepniewski, A Wysmolek, M Potemski, J Lusakowski, J Lusakowski, ...
physica status solidi (b) 210 (2), 373-383, 1998
31 1998