| 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 459 | 2022 |
| Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ... 2007 IEEE International Electron Devices Meeting, 775-778, 2007 | 266 | 2007 |
| Analog memristive synapse in spiking networks implementing unsupervised learning E Covi, S Brivio, A Serb, T Prodromakis, M Fanciulli, S Spiga Frontiers in neuroscience 10, 482, 2016 | 204 | 2016 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 181 | 2021 |
| Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters Solid-State Electronics 58 (1), 42-47, 2011 | 144 | 2011 |
| Atomic-layer deposition of Lu2O3 G Scarel, E Bonera, C Wiemer, G Tallarida, S Spiga, M Fanciulli, ... Applied Physics Letters 85 (4), 630-632, 2004 | 134 | 2004 |
| Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ... Journal of Electroceramics 39, 21-38, 2017 | 107 | 2017 |
| Interface engineering for Ge metal-oxide–semiconductor devices A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ... Thin Solid Films 515 (16), 6337-6343, 2007 | 106 | 2007 |
| Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices S Brivio, J Frascaroli, S Spiga Applied Physics Letters 107 (2), 2015 | 99 | 2015 |
| Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices D Ielmini, S Spiga, F Nardi, C Cagli, A Lamperti, E Cianci, M Fanciulli Journal of Applied Physics 109 (3), 2011 | 90 | 2011 |
| HfO2 as gate dielectric on Ge: Interfaces and deposition techniques M Caymax, S Van Elshocht, M Houssa, A Delabie, T Conard, M Meuris, ... Materials Science and Engineering: B 135 (3), 256-260, 2006 | 88 | 2006 |
| Formation and disruption of conductive filaments in a HfO2/TiN structure S Brivio, G Tallarida, E Cianci, S Spiga Nanotechnology 25 (38), 385705, 2014 | 86 | 2014 |
| Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly J Frascaroli, S Brivio, F Ferrarese Lupi, G Seguini, L Boarino, M Perego, ... ACS nano 9 (3), 2518-2529, 2015 | 83 | 2015 |
| Vibrational and electrical properties of hexagonal La2O3 films G Scarel, A Debernardi, D Tsoutsou, S Spiga, SC Capelli, L Lamagna, ... Applied Physics Letters 91 (10), 2007 | 79 | 2007 |
| Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition S Spiga, A Lamperti, C Wiemer, M Perego, E Cianci, G Tallarida, HL Lu, ... Microelectronic Engineering 85 (12), 2414-2419, 2008 | 78 | 2008 |
| Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing J Frascaroli, S Brivio, E Covi, S Spiga Scientific reports 8 (1), 7178, 2018 | 77 | 2018 |
| Atomic layer deposition of NiO films on Si (100) using cyclopentadienyl-type compounds and ozone as precursors HL Lu, G Scarel, C Wiemer, M Perego, S Spiga, M Fanciulli, G Pavia Journal of The Electrochemical Society 155 (10), H807, 2008 | 74 | 2008 |
| Synaptic potentiation and depression in Al: HfO2-based memristor E Covi, S Brivio, M Fanciulli, S Spiga Microelectronic Engineering 147, 41-44, 2015 | 73 | 2015 |
| Energy-band diagram of metal/Lu2O3/silicon structures G Seguini, E Bonera, S Spiga, G Scarel, M Fanciulli Applied physics letters 85 (22), 5316-5318, 2004 | 71 | 2004 |
| Effect of Al doping on the retention behavior of HfO2 resistive switching memories J Frascaroli, FG Volpe, S Brivio, S Spiga Microelectronic Engineering 147, 104-107, 2015 | 65 | 2015 |
Alessio LampertiResearch Scientist, IMM-CNREmail verificata su mdm.imm.cnr.it
