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Konstantin Vasilevskiy (Vassilevski)
Konstantin Vasilevskiy (Vassilevski)
Senior Research Associate, Newcastle University
Verified email at ncl.ac.uk - Homepage
Title
Cited by
Cited by
Year
Prospects for SiC electronics and sensors
NG Wright, AB Horsfall, K Vassilevski
Materials today 11 (1-2), 16-21, 2008
2422008
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide
IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ...
Journal of Applied Physics 97 (8), 2005
1992005
The sinusoidal probe: a new approach to improve electrode longevity
HS Sohal, A Jackson, R Jackson, GJ Clowry, K Vassilevski, A O’Neill, ...
Frontiers in neuroengineering 7, 10, 2014
1202014
Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN
G Salviati, M Albrecht, C Zanotti‐Fregonara, N Armani, M Mayer, ...
physica status solidi (a) 171 (1), 325-339, 1999
1151999
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ...
Semiconductor Science and Technology 20 (3), 271, 2005
952005
Physical properties of bulk GaN crystals grown by HVPE
YV Melnik, KV Vassilevski, IP Nikitina, AI Babanin, VY Davydov, ...
MRS Internet Journal of Nitride Semiconductor Research 2, 1-9, 1997
821997
III-V compounds semiconductor device with an AlxByInzGa1-xy-zN non continuous quantum dot layer
AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev
US Patent 6,479,839, 2002
762002
Properties of free-standing GaN bulk crystals grown by HVPE
Y Melnik, A Nikolaev, I Nikitina, K Vassilevski, V Dmitriev
MRS Online Proceedings Library (OPL) 482, 269, 1997
681997
Experimental determination of electron drift velocity in 4H-SiC p/sup+/-nn/sup+/avalanche diodes
KV Vassilevski, K Zekentes, AV Zorenko, LP Romanov
IEEE Electron Device Letters 21 (10), 485-487, 2000
662000
Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
K Zekentes, KV Vassilievski
US Patent 6,599,644, 2003
532003
Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC
K Vassilevski, K Zekentes, K Tsagaraki, G Constantinidis, I Nikitina
Materials Science and Engineering: B 80 (1-3), 370-373, 2001
532001
4H-SiC IMPATT diode fabrication and testing
K Vassilevski, AV Zorenko, K Zekentes, K Tsagaraki, E Bano, C Banc, ...
Materials Science Forum 389, 1353-1358, 2002
512002
High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
K Vassilevski, I Nikitina, A Horsfall, NG Wright, AG O'Neill, KP Hilton, ...
Materials Science Forum 556557, 873-876, 2007
412007
Device processing and characterisation of high temperature silicon carbide Schottky diodes
KV Vassilevski, IP Nikitina, NG Wright, AB Horsfall, AG O’Neill, ...
Microelectronic engineering 83 (1), 150-154, 2006
402006
III-V compound semiconductor device with an AlxByInzGa1-xy-zN1-a-bPaAsb non-continuous quantum dot layer
AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev
US Patent 6,849,862, 2005
402005
Semi-transparent SiC Schottky diodes for X-ray spectroscopy
JE Lees, DJ Bassford, GW Fraser, AB Horsfall, KV Vassilevski, NG Wright, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007
382007
Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack
F Arith, J Urresti, K Vasilevskiy, S Olsen, N Wright, A O’Neill
IEEE Electron Device Letters 39 (4), 564-567, 2018
372018
Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode
KV Vassilevski, AV Zorenko, K Zekentes
Electronics Letters 37 (7), 1, 2001
362001
Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon
E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, ...
Journal of Applied Physics 113 (11), 2013
342013
Method for growing p-type III-V compound material utilizing HVPE techniques
AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev
US Patent 6,555,452, 2003
342003
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