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Stefano Brivio
Stefano Brivio
CNR - IMM
Email verificata su mdm.imm.cnr.it
Titolo
Citata da
Citata da
Anno
Analog memristive synapse in spiking networks implementing unsupervised learning
E Covi, S Brivio, A Serb, T Prodromakis, M Fanciulli, S Spiga
Frontiers in neuroscience 10, 482, 2016
1922016
On‐chip manipulation of protein‐coated magnetic beads via domain‐wall conduits
M Donolato, P Vavassori, M Gobbi, M Deryabina, MF Hansen, ...
Advanced materials 22 (24), 2706-2710, 2010
1672010
Electric field control of magnetic anisotropies and magnetic coercivity in Fe/BaTiO3 (001) heterostructures
S Brivio, D Petti, R Bertacco, JC Cezar
Applied physics letters 98 (9), 2011
1062011
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ...
Journal of Electroceramics 39, 21-38, 2017
1032017
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices
S Brivio, J Frascaroli, S Spiga
Applied Physics Letters 107 (2), 2015
962015
Oxygen vacancies and induced changes in the electronic and magnetic structures of : A combined ab initio and photoemission study
S Picozzi, C Ma, Z Yang, R Bertacco, M Cantoni, A Cattoni, D Petti, ...
Physical Review B—Condensed Matter and Materials Physics 75 (9), 094418, 2007
962007
Formation and disruption of conductive filaments in a HfO2/TiN structure
S Brivio, G Tallarida, E Cianci, S Spiga
Nanotechnology 25 (38), 385705, 2014
842014
Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly
J Frascaroli, S Brivio, F Ferrarese Lupi, G Seguini, L Boarino, M Perego, ...
ACS nano 9 (3), 2518-2529, 2015
802015
Synaptic potentiation and depression in Al: HfO2-based memristor
E Covi, S Brivio, M Fanciulli, S Spiga
Microelectronic Engineering 147, 41-44, 2015
732015
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing
J Frascaroli, S Brivio, E Covi, S Spiga
Scientific reports 8 (1), 7178, 2018
702018
Effect of Al doping on the retention behavior of HfO2 resistive switching memories
J Frascaroli, FG Volpe, S Brivio, S Spiga
Microelectronic Engineering 147, 104-107, 2015
642015
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
S Brivio, E Covi, A Serb, T Prodromakis, M Fanciulli, S Spiga
Applied Physics Letters 109 (13), 2016
632016
HfO2-based memristors for neuromorphic applications
E Covi, S Brivio, A Serb, T Prodromakis, M Fanciulli, S Spiga
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 393-396, 2016
622016
Extended memory lifetime in spiking neural networks employing memristive synapses with nonlinear conductance dynamics
S Brivio, D Conti, MV Nair, J Frascaroli, E Covi, C Ricciardi, G Indiveri, ...
Nanotechnology 30 (1), 015102, 2018
462018
Role of Al doping in the filament disruption in HfO2 resistance switches
S Brivio, J Frascaroli, S Spiga
Nanotechnology 28 (39), 395202, 2017
452017
Effects of Au nanoparticles on the magnetic and transport properties of ultrathin layers
S Brivio, C Magen, AA Sidorenko, D Petti, M Cantoni, M Finazzi, ...
Physical Review B—Condensed Matter and Materials Physics 81 (9), 094410, 2010
442010
Non-linear memristive synaptic dynamics for efficient unsupervised learning in spiking neural networks
S Brivio, DRB Ly, E Vianello, S Spiga
Frontiers in Neuroscience 15, 580909, 2021
372021
Epitaxial growth of Fe/BaTiO3 heterostructures
S Brivio, C Rinaldi, D Petti, R Bertacco, F Sanchez
Thin Solid Films 519 (17), 5804-5807, 2011
372011
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons
E Covi, R George, J Frascaroli, S Brivio, C Mayr, H Mostafa, G Indiveri, ...
Journal of Physics D: Applied Physics 51 (34), 344003, 2018
352018
HfO2-based resistive switching memory devices for neuromorphic computing
S Brivio, S Spiga, D Ielmini
Neuromorphic Computing and Engineering 2 (4), 042001, 2022
342022
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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