InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ...
Applied physics letters 74 (19), 2815-2817, 1999
512 1999 InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm JA Lott, NN Ledentsov, VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, ...
Electronics Letters 36 (16), 1384-1385, 2000
344 2000 The role of Auger recombination in the temperature-dependent output characteristics of -doped 1.3 μm quantum dot lasers S Fathpour, Z Mi, P Bhattacharya, AR Kovsh, SS Mikhrin, IL Krestnikov, ...
Applied Physics Letters 85 (22), 5164-5166, 2004
307 2004 Quantum dot lasers: breakthrough in optoelectronics D Bimberg, M Grundmann, F Heinrichsdorff, NN Ledentsov, VM Ustinov, ...
Thin solid films 367 (1-2), 235-249, 2000
288 2000 Tuning quantum dot properties by activated phase separation of an InGa (Al) As alloy grown on InAs stressors MV Maximov, AF Tsatsul’nikov, BV Volovik, DS Sizov, YM Shernyakov, ...
Physical Review B 62 (24), 16671, 2000
256 2000 High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range NN Ledentsov, AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, ...
Electronics Letters 39 (15), 1126-1128, 2003
214 2003 InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil'Ev, ...
Electronics Letters 38 (19), 1, 2002
194 2002 High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers SS Mikhrin, AR Kovsh, IL Krestnikov, AV Kozhukhov, DA Livshits, ...
Semiconductor science and technology 20 (5), 340, 2005
191 2005 High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser EU Rafailov, MA Cataluna, W Sibbett, ND Il’Inskaya, YM Zadiranov, ...
Applied Physics Letters 87 (8), 081107, 2005
185 2005 AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs SA Blokhin, AV Sakharov, AM Nadtochy, AS Pauysov, MV Maximov, ...
Semiconductors 43, 514-518, 2009
178 2009 Strain engineering of self-organized InAs quantum dots F Guffarth, R Heitz, A Schliwa, O Stier, NN Ledentsov, AR Kovsh, ...
Physical Review B 64 (8), 085305, 2001
175 2001 1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition YM Shernyakov, DA Bedarev, EY Kondrat'eva, PS Kop'ev, AR Kovsh, ...
Electronics Letters 35 (11), 898-900, 1999
172 1999 Hole and electron emission from InAs quantum dots CMA Kapteyn, M Lion, R Heitz, D Bimberg, PN Brunkov, BV Volovik, ...
Applied Physics Letters 76 (12), 1573-1575, 2000
159 2000 Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate AE Zhukov, AR Kovsh, VM Ustinov, YM Shernyakov, SS Mikhrin, ...
IEEE Photonics Technology Letters 11 (11), 1345-1347, 1999
156 1999 Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates AE Zhukov, AR Kovsh, NA Maleev, SS Mikhrin, VM Ustinov, ...
Applied physics letters 75 (13), 1926-1928, 1999
156 1999 InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil’ev, ...
Journal of Crystal Growth 251 (1-4), 729-736, 2003
153 2003 35GHz mode-locking of 1.3 μm quantum dot lasers M Kuntz, G Fiol, M Lämmlin, D Bimberg, MG Thompson, KT Tan, ...
Applied Physics Letters 85 (5), 843-845, 2004
149 2004 Quantum dot laser with 75nm broad spectrum of emission A Kovsh, I Krestnikov, D Livshits, S Mikhrin, J Weimert, A Zhukov
Optics letters 32 (7), 793-795, 2007
144 2007 Feedback sensitivity of 1.3 lm InAs/GaAs quantum dot lasers D O’Brien, SP Hegarty, G Huyet, JG McInerney, T Kettler, M Laemmlin, ...
RIN 140, 150, 2003
135 2003 Electronic structure of self-assembled InAs quantum dots in GaAs matrix PN Brounkov, A Polimeni, ST Stoddart, M Henini, L Eaves, PC Main, ...
Applied physics letters 73 (8), 1092-1094, 1998
125 1998