| Systematic experimental and theoretical investigation of intersubband absorption in quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125347, 2006 | 317 | 2006 |
| GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ... Journal of Applied Physics 104 (9), 2008 | 231 | 2008 |
| Ultrastrong Coupling Regime and Plasmon Polaritons<? format?> in Parabolic Semiconductor Quantum Wells M Geiser, F Castellano, G Scalari, M Beck, L Nevou, J Faist Physical Review Letters 108 (10), 106402, 2012 | 212 | 2012 |
| Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ... Nanotechnology 18 (38), 385306, 2007 | 166 | 2007 |
| GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ... New Journal of Physics 11 (12), 125023, 2009 | 119 | 2009 |
| Midinfrared intersubband absorption in lattice-matched AlInN∕ GaN multiple quantum wells S Nicolay, JF Carlin, E Feltin, R Butté, M Mosca, N Grandjean, M Ilegems, ... Applied Physics Letters 87 (11), 2005 | 108 | 2005 |
| Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths F Guillot, E Bellet-Amalric, E Monroy, M Tchernycheva, L Nevou, ... Journal of applied physics 100 (4), 2006 | 107 | 2006 |
| Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ... Applied physics letters 88 (14), 2006 | 97 | 2006 |
| Short wavelength (λ= 2.13 μm) intersubband luminescence from GaN∕ AlN quantum wells at room temperature L Nevou, M Tchernycheva, FH Julien, F Guillot, E Monroy Applied physics letters 90 (12), 2007 | 77 | 2007 |
| Indium surfactant effect on AlN∕ GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions S Nicolay, E Feltin, JF Carlin, M Mosca, L Nevou, M Tchernycheva, ... Applied physics letters 88 (15), 2006 | 77 | 2006 |
| Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕ AlN coupled quantum wells L Nevou, N Kheirodin, M Tchernycheva, L Meignien, P Crozat, A Lupu, ... Applied physics letters 90 (22), 2007 | 75 | 2007 |
| High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈ 1.55 μm A Vardi, N Kheirodin, L Nevou, H Machhadani, L Vivien, P Crozat, ... Applied Physics Letters 93 (19), 2008 | 74 | 2008 |
| Electron confinement in strongly coupled GaN∕ AlN quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, F Guillot, E Monroy, ... Applied physics letters 88 (15), 2006 | 65 | 2006 |
| Strong light-matter coupling at terahertz frequencies at room temperature in electronic LC resonators M Geiser, C Walther, G Scalari, M Beck, M Fischer, L Nevou, J Faist Applied Physics Letters 97 (19), 2010 | 61 | 2010 |
| GaN-based quantum dot infrared photodetector operating at 1.38 µm L Doyennette, L Nevou, M Tchernycheva, A Lupu, F Guillot, E Monroy, ... Electronics Letters 41 (19), 1, 2005 | 59 | 2005 |
| Strain-induced interface instability in GaN∕ AlN multiple quantum wells S Nicolay, E Feltin, JF Carlin, N Grandjean, L Nevou, FH Julien, ... Applied Physics Letters 91 (6), 2007 | 52 | 2007 |
| Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths M Tchernycheva, L Nevou, L Doyennette, A Helman, R Colombelli, ... Applied Physics Letters 87 (10), 2005 | 52 | 2005 |
| Intersubband resonant enhancement of second-harmonic generation in GaN∕ AlN quantum wells L Nevou, M Tchernycheva, F Julien, M Raybaut, A Godard, E Rosencher, ... Applied physics letters 89 (15), 2006 | 48 | 2006 |
| Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells K Kheirodin, L Nevou, H Machhadani, P Crozat, L Vivien, ... Photonics Technology Letters, IEEE 20 (9), 724-726, 2008 | 47 | 2008 |
| Room-temperature intersubband emission of GaN/AlN quantum wells at λ= 2.3 µm L Nevou, FH Julien, R Colombelli, F Guillot, E Monroy Electronics Letters 42 (22), 1308-1309, 2006 | 40 | 2006 |
Maria TchernychevaResearcher at Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Universite Paris-SudVerified email at u-psud.fr
