Giorgos Fagas

Citata da

	Tutte	Dal 2016
Citazioni	2265	732
Indice H	24	14
i10-index	42	23

220

110

165

2002200320042005200620072008200920102011201220132014201520162017201820192020202130 27 42 42 94 92 119 129 118 135 167 208 159 154 144 143 156 131 134 24

Coautori

James C. GreerLi Dak Sum Chair in Electronic Materials & Devices, University of Nottingham, Ningbo, China campusEmail verificata su nottingham.edu.cn
Gianaurelio CunibertiTU Dresden; https://ORCID.org/0000-0002-6574-7848Email verificata su tu-dresden.de
Michael NolanTyndall National Institute, University College Cork, IrelandEmail verificata su tyndall.ie
Rafael GutierrezTU DresdenEmail verificata su nano.tu-dresden.de
Pedram RazaviEmail verificata su tyndall.ie
Frank GrossmannInstitut für Theoretische Physik, Technische Universität Dresden, Dresden, GermanyEmail verificata su physik.tu-dresden.de
Colin J. LambertResearch Professor, Lancaster UniversityEmail verificata su lancaster.ac.uk
Isabelle FerainGlobalfoundriesEmail verificata su globalfoundries.com
Hadi H. ArefiFunctional Nanostructures at Surfaces (PGI-3), Peter Grünberg InstituteEmail verificata su fz-juelich.de
Douglas J PaulRoyal Academy of Engineering Chair in Emerging Technologies, University of GlasgowEmail verificata su glasgow.ac.uk
Aryan AfzalianUniversité catholique de LouvainEmail verificata su uclouvain.be
Ran Yan (Ruby)GLOBALFOUNDRIESEmail verificata su globalfoundries.com
Luca GammaitoniNiPS laboratory, Dipartimento di Fisica, Università di PerugiaEmail verificata su nipslab.org
ND AkhavanThe University of Western AustraliaEmail verificata su uwa.edu.au
Thomas FrauenheimProfessor für Computational Materials ScienceEmail verificata su bccms.uni-bremen.de
Sean O'CallaghanData Engineer, NovartisEmail verificata su novartis.com
A.M. IonescuProfessor of NanoelectronicsEmail verificata su epfl.ch
Elizabeth BuitragoABB semiconductorEmail verificata su ch.abb.com
A.N.NazarovInstitute of Semiconductor Physics NASUEmail verificata su lab15.kiev.ua
Sylvain BARRAUDCEA-LETI, Minatec CampusEmail verificata su cea.fr

Giorgos Fagas

Tyndall National Institute

Email verificata su tyndall.ie

electronic transport nanowires molecular electronics disordered systems device simulations


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Introducing molecular electronics G.(Gianaurelio) Cuniberti, G.(Giorgos) Fagas, K Richter Springer, 2005	506*	2005
Silicon nanowire band gap modification M Nolan, S O'Callaghan, G Fagas, JC Greer, T Frauenheim Nano letters 7 (1), 34-38, 2007	257	2007
Theory of an all-carbon molecular switch R Gutiérrez, G Fagas, G Cuniberti, F Grossmann, R Schmidt, K Richter Physical Review B 65 (11), 113410, 2002	126	2002
Simulation of junctionless Si nanowire transistors with 3 nm gate length L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer Applied Physics Letters 97 (6), 062105, 2010	103	2010
Fingerprints of mesoscopic leads in the conductance of a molecular wire G Cuniberti, G Fagas, K Richter Chemical physics 281 (2-3), 465-476, 2002	66	2002
Deformation potentials and electron− phonon coupling in silicon nanowires F Murphy-Armando, G Fagas, JC Greer Nano letters 10 (3), 869-873, 2010	63	2010
Lattice dynamics of a disordered solid-solid interface G Fagas, AG Kozorezov, CJ Lambert, JK Wigmore, A Peacock, A Poelaert, ... Physical review b 60 (9), 6459, 1999	61	1999
Phonon-mediated thermal conductance of mesoscopic wires with rough edges A Kambili, G Fagas, VI Fal’ko, CJ Lambert Physical review b 60 (23), 15593, 1999	58	1999
Geometrical enhancement of the proximity effect in quantum wires with extended superconducting tunnel contacts G Fagas, G Tkachov, A Pfund, K Richter Physical Review B 71 (22), 224510, 2005	57	2005
A proposed confinement modulated gap nanowire transistor based on a metal (tin) L Ansari, G Fagas, JP Colinge, JC Greer Nano letters 12 (5), 2222-2227, 2012	53	2012
Ballistic conductance in oxidized Si nanowires G Fagas, JC Greer Nano letters 9 (5), 1856-1860, 2009	48	2009
Electron transport in nanotube–molecular-wire hybrids G Fagas, G Cuniberti, K Richter Physical Review B 63 (4), 045416, 2001	48	2001
Tunnelling in alkanes anchored to gold electrodes via amine end groups G Fagas, JC Greer Nanotechnology 18 (42), 424010, 2007	47	2007
Tunnel currents across silane diamines/dithiols and alkane diamines/dithiols: A comparative computational study S McDermott, CB George, G Fagas, JC Greer, MA Ratner The Journal of Physical Chemistry C 113 (2), 744-750, 2009	42	2009
Independent particle descriptions of tunneling using the many-body quantum transport approach G Fagas, P Delaney, JC Greer Physical Review B 73 (24), 241314, 2006	40	2006
Complex-band structure: a method to determine the off-resonant electron transport in oligomers G Fagas, A Kambili, M Elstner Chemical physics letters 389 (4-6), 268-273, 2004	40	2004
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu Sensors and Actuators B: Chemical 183, 1-10, 2013	36	2013
Chemical trends in the work function of modified Si (111) surfaces: A DFT study HH Arefi, G Fagas The Journal of Physical Chemistry C 118 (26), 14346-14354, 2014	34	2014
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas Microelectronic Engineering 109, 326-329, 2013	33	2013
Conductance of a molecular junction mediated by unconventional metal-induced gap states R Gutiérrez, G Fagas, K Richter, F Grossmann, R Schmidt EPL (Europhysics Letters) 62 (1), 90, 2003	30	2003

Il sistema al momento non può eseguire l'operazione. Riprova più tardi.

Articoli 1–20

Citazioni per anno

Citazioni duplicate

Citazioni unite

Aggiungi coautoriCoautori

Carica PDF

Segui questo autore

Citata da

Coautori