| New tunneling features in polar III-nitride resonant tunneling diodes J Encomendero, FA Faria, SM Islam, V Protasenko, S Rouvimov, ... Physical Review X 7 (4), 041017, 2017 | 71 | 2017 |
| Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2 J Encomendero, R Yan, A Verma, SM Islam, V Protasenko, S Rouvimov, ... Applied Physics Letters 112 (10), 2018 | 64 | 2018 |
| High-frequency GaN electronic devices P Fay, D Jena, P Maki Springer, 2020 | 34 | 2020 |
| Broken symmetry effects due to polarization on resonant tunneling transport in double-barrier nitride heterostructures J Encomendero, V Protasenko, B Sensale-Rodriguez, P Fay, F Rana, ... Physical Review Applied 11 (3), 034032, 2019 | 30 | 2019 |
| Metal-ion effects on the polarization of metal-bound water and infrared vibrational modes of the coordinated metal center of mycobacterium tuberculosis pyrazinamidase via … K Salazar-Salinas, PA Baldera-Aguayo, JJ Encomendero-Risco, ... The Journal of Physical Chemistry B 118 (34), 10065-10075, 2014 | 23 | 2014 |
| Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates Z Zhang, J Encomendero, R Chaudhuri, Y Cho, V Protasenko, K Nomoto, ... Applied Physics Letters 119 (16), 2021 | 19 | 2021 |
| Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology HO Condori Quispe, JJ Encomendero-Risco, HG Xing, ... Applied Physics Letters 109 (6), 2016 | 16 | 2016 |
| Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ... Applied Physics Letters 105 (17), 2014 | 16 | 2014 |
| N-polar GaN/AlN resonant tunneling diodes YJ Cho, J Encomendero, ST Ho, HG Xing, D Jena Applied Physics Letters 117 (14), 2020 | 14 | 2020 |
| Fighting broken symmetry with doping: Toward polar resonant tunneling diodes with symmetric characteristics J Encomendero, V Protasenko, F Rana, D Jena, HG Xing Physical Review Applied 13 (3), 034048, 2020 | 13 | 2020 |
| Gallium nitride tunneling field-effect transistors exploiting polarization fields A Chaney, H Turski, K Nomoto, Z Hu, J Encomendero, S Rouvimov, ... Applied Physics Letters 116 (7), 2020 | 9 | 2020 |
| N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates E Kim, Z Zhang, J Encomendero, J Singhal, K Nomoto, A Hickman, ... Applied Physics Letters 122 (9), 2023 | 8 | 2023 |
| FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2022 International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2022 | 8 | 2022 |
| Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates J Singhal, J Encomendero, Y Cho, L van Deurzen, Z Zhang, K Nomoto, ... AIP Advances 12 (9), 2022 | 8 | 2022 |
| Resonant tunneling transport in polar III-Nitride heterostructures J Encomendero, D Jena, HG Xing High-Frequency GaN Electronic Devices, 215-247, 2020 | 7 | 2020 |
| Comparison of unit cell coupling for grating‐gate and high electron mobility transistor array THz resonant absorbers HO Condori Quispe, A Chanana, J Encomendero, M Zhu, N Trometer, ... Journal of Applied Physics 124 (9), 2018 | 7 | 2018 |
| Repeatable room temperature negative differential conductance in GaN/AlN resonant tunneling diodes J Encomendero, FA Faria, SM Islam, V Protasenko, S Rouvimov, P Fay, ... arXiv preprint arXiv:1606.08100, 2016 | 6 | 2016 |
| New physics in GaN resonant tunneling diodes HG Xing, J Encomendero, D Jena Gallium Nitride Materials and Devices XIV 10918, 45-50, 2019 | 5 | 2019 |
| High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0. 85Ga0. 15N heterostructures on single-crystal AlN substrates Z Zhang, J Encomendero, E Kim, J Singhal, YJ Cho, K Nomoto, M Toita, ... Applied Physics Letters 121 (8), 2022 | 4 | 2022 |
| Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy Z Zhang, Y Cho, M Gong, ST Ho, J Singhal, J Encomendero, X Li, H Lee, ... IEEE Transactions on Magnetics 58 (2), 1-6, 2021 | 4 | 2021 |
Debdeep JenaCornell UniversityVerified email at cornell.edu
