| Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films J Bouaziz, PR Romeo, N Baboux, B Vilquin ACS Applied Electronic Materials 1 (9), 1740-1745, 2019 | 43 | 2019 |
| Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering J Bouaziz, P Rojo Romeo, N Baboux, B Vilquin Journal of Vacuum Science & Technology B 37 (2), 2019 | 30 | 2019 |
| Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge? J Bouaziz, P Rojo Romeo, N Baboux, B Vilquin Applied Physics Letters 118 (8), 2021 | 28 | 2021 |
| Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers J Bouaziz, P Rojo Romeo, N Baboux, R Negrea, L Pintilie, B Vilquin APL Materials 7 (8), 2019 | 26 | 2019 |
| Advanced Epitaxial Lift‐Off and Transfer Procedure for the Fabrication of High‐Quality Functional Oxide Membranes J Bouaziz, C Cancellieri, B Rheingans, LPH Jeurgens, F La Mattina Advanced Materials Interfaces 10 (2), 2201458, 2023 | 6 | 2023 |
| Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate Y Sun, G Niu, W Ren, J Zhao, Y Wang, H Wu, L Jiang, L Dai, YH Xie, ... AIP Advances 11 (6), 2021 | 5 | 2021 |
| Mémoires ferroélectriques non-volatiles à base de (Hf, Zr) O2 pour la nanoélectronique basse consommation J Bouaziz Université de Lyon, 2020 | 1 | 2020 |
| How ALD deposition analysis can help PVD deposition process! B Vilquin, D Deleruyelle, J Bouaziz, M Le Berre, C Chevalier, N Baboux, ... 9ème Workshop RAFALD, 2023 | | 2023 |
| Elaboration and imprint consideration in HfZrO2 ferroelectric capacitors J Bouaziz, G Segantini, B Manchon, IC Infante, N Baboux, M Bugnet, ... High k Workshop 2023, 2023 | | 2023 |
| Engineering the nano and micro structures of sputtered HfZrO2 thin films J Bouaziz, G Segantini, B Manchon, R Barhoumi, IC Infante, ... 15th International Meeting on Ferroelectricity-IMF 2023, 2023 | | 2023 |
| Advanced Epitaxial Lift‐Off and Transfer Procedure for the Fabrication of High‐Quality Functional Oxide Membranes (Adv. Mater. Interfaces 2/2023) J Bouaziz, C Cancellieri, B Rheingans, LPH Jeurgens, F La Mattina Advanced Materials Interfaces 10 (2), 2370005, 2023 | | 2023 |
| Influence of the electrode interface on the properties of ferroelectric HfZrO2 J Bouaziz, G Segantini, B Manchon, R Barhoumi, IC Infante, M Bugnet, ... High k Workshop 2022, 2022 | | 2022 |
| Wake-Up Effect and Retention Evolutions of Hf0. 5Zr0. 5O2 Capacitor by Nanostructuration Engineering J Bouaziz, G Segantini, B Manchon, R Barhoumi, D Deleruyelle, ... ISAF-PFM-ECAPD 2022, 2022 | | 2022 |
| How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties J Bouaziz, G Segantini, B Manchon, R Barhoumi, IC Infante, ... EMRS 2022 Spring Meeting-Symposium N: Synthesis, processing and …, 2022 | | 2022 |
| Huge reduction of wake-up effect in ferroelectric HfZrO2 nanostructures B Vilquin, N Baboux, PR Romeo, J Bouaziz EMRS 2021 Fall Meeting, 2021 | | 2021 |
| Nanostructuration effect on the properties of ferroelectric HfZrO2 B Vilquin, J Bouaziz, PR Romeo, N Baboux 6th edition of the International Workshop of Materials Physics, 2021 | | 2021 |
| Tracking polarization loss and imprint during electrical tests in sputtered TiN/HZO/TiN capacitors B Vilquin, J Bouaziz, N Baboux, PR Romeo Novel high-k workshop applications, 2021 | | 2021 |
| Reduction of HfZrO2 capacitor wake-up effect J Bouaziz, N Baboux, PR Romeo, B Vilquin Materials Challenges for Memory, 2021 | | 2021 |
| The discovery of ferroelectricity in HfO2 B Vilquin, N Baboux, PR Romeo, J Bouaziz 6th Conference of Bangladesh Crystallographic Association, 2021 | | 2021 |
| Supplementary Materials: Imprint issue during retention tests for HfO2-based FRAM: an industrial challenge? J Bouaziz, PR Romeo, N Baboux, B Vilquin | | 2021 |
Bertrand VilquinReader, Ecole centrale de Lyon (France)Email verificata su ec-lyon.fr
