Liang Zhao
Liang Zhao
Geverifieerd e-mailadres voor alumni.stanford.edu
TitelGeciteerd doorJaar
Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations
L Zhao, HY Chen, SC Wu, Z Jiang, S Yu, TH Hou, HSP Wong, Y Nishi
Nanoscale 6 (11), 5698-5702, 2014
1032014
Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs
MM Shulaker, TF Wu, A Pal, L Zhao, Y Nishi, K Saraswat, HSP Wong, ...
2014 IEEE International Electron Devices Meeting, 27.4. 1-27.4. 4, 2014
1002014
Formation of Anodic Aluminum Oxide with Serrated Nanochannels
D Li, L Zhao, C Jiang, JG Lu
Nano letters 10 (8), 2766-2771, 2010
992010
Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory
L Zhao, SG Park, B Magyari-Köpe, Y Nishi
Applied Physics Letters 102 (8), 083506, 2013
422013
Design and optimization methodology for 3D RRAM arrays
Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ...
2013 IEEE International Electron Devices Meeting, 25.7. 1-25.7. 4, 2013
382013
Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations
L Zhao, S Clima, B Magyari-Köpe, M Jurczak, Y Nishi
Applied Physics Letters 107 (1), 013504, 2015
302015
Molecular dynamics study of the switching mechanism of carbon-based resistive memory
Y He, J Zhang, X Guan, L Zhao, Y Wang, H Qian, Z Yu
IEEE transactions on electron devices 57 (12), 3434-3441, 2010
292010
First principles modeling of charged oxygen vacancy filaments in reduced TiO2–implications to the operation of non-volatile memory devices
L Zhao, SG Park, B Magyari-Köpe, Y Nishi
Mathematical and Computer Modelling 58 (1-2), 275-281, 2013
232013
Dopant selection rules for extrinsic tunability of HfOxRRAM characteristics: A systematic study
L Zhao, SW Ryu, A Hazeghi, D Duncan, B Magyari-Köpe, Y Nishi
2013 Symposium on VLSI Technology, T106-T107, 2013
212013
Ultrathin (∼2nm) HfOxas the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration
L Zhao, Z Jiang, HY Chen, J Sohn, K Okabe, B Magyari-Köpe, HSP Wong, ...
2014 IEEE International Electron Devices Meeting, 6.6. 1-6.6. 4, 2014
202014
Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in TiO2-Based Unipolar Resistive Memory
L Zhao, J Zhang, Y He, X Guan, H Qian, Z Yu
IEEE Electron Device Letters 32 (5), 677-679, 2011
152011
3-D resistive memory arrays: From intrinsic switching behaviors to optimization guidelines
H Li, B Gao, HYH Chen, Z Chen, P Huang, R Liu, L Zhao, ZJ Jiang, L Liu, ...
IEEE Transactions on Electron Devices 62 (10), 3160-3167, 2015
142015
Temperature-dependent photoconductance of heavily doped ZnO nanowires
D Li, L Zhao, R Wu, C Ronning, JG Lu
Nano Research 4 (11), 1110-1116, 2011
142011
Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates
S Lin, L Zhao, J Zhang, H Wu, Y Wang, H Qian, Z Yu
2012 International Electron Devices Meeting, 26.3. 1-26.3. 4, 2012
132012
Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays
HY Chen, B Gao, H Li, R Liu, P Huang, Z Chen, B Chen, F Zhang, L Zhao, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
122014
Polaronic interactions between oxygen vacancies in rutile TiO 2
L Zhao, B Magyari-Köpe, Y Nishi
Phyiscal Review B 95 (5), 054104, 2017
112017
Improved multi-level control of RRAM using pulse-train programming
L Zhao, HY Chen, SC Wu, Z Jiang, S Yu, TH Hou, HSP Wong, Y Nishi
Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014
112014
Performance prediction of large-scale 1S1R resistive memory array using machine learning
Z Jiang, P Huang, L Zhao, S Kvatinsky, S Yu, X Liu, J Kang, Y Nishi, ...
2015 IEEE International Memory Workshop (IMW), 1-4, 2015
82015
Simulation study of switching mechanism in carbon-based resistive memory with molecular dynamics and extended Hückel theory-based NEGF method
X Guan, Y He, L Zhao, J Zhang, Y Wang, H Qian, Z Yu
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
72009
The interplay between electronic and ionic transport in the resistive switching process of random access memory devices
B Magyari-Kope, L Zhao, K Kamiya, MY Yang, M Niwa, K Shiraishi, ...
ECS Transactions 64 (8), 153, 2014
62014
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Artikelen 1–20