Isao H. Inoue (井上 公)
Isao H. Inoue (井上 公)
AIST (産総研) / Uni of Tsukuba (筑波大学)
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Zitiert von
Zitiert von
Field-effect transistor on with sputtered gate insulator
K Ueno, IH Inoue, H Akoh, M Kawasaki, Y Tokura, H Takagi
Applied Physics Letters 83 (9), 1755-1757, 2003
Nonvolatile memory with multilevel switching: a basic model
MJ Rozenberg, IH Inoue, MJ Sanchez
Physical review letters 92 (17), 178302, 2004
Electrostatic modification of novel materials
CH Ahn, A Bhattacharya, M Di Ventra, JN Eckstein, CD Frisbie, ...
Reviews of Modern Physics 78 (4), 1185, 2006
Colossal electroresistance of a thin film at room temperature
A Odagawa, H Sato, IH Inoue, H Akoh, M Kawasaki, Y Tokura, T Kanno, ...
Physical Review B 70 (22), 224403, 2004
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
IH Inoue, S Yasuda, H Akinaga, H Takagi
Physical Review B 77 (3), 035105, 2008
Systematic Development of the Spectral Function in the Mott-Hubbard System
IH Inoue, I Hase, Y Aiura, A Fujimori, Y Haruyama, T Maruyama, ...
Physical review letters 74 (13), 2539, 1995
High intergranular critical currents in metallic MgB2 superconductor
M Kambara, NH Babu, ES Sadki, JR Cooper, H Minami, DA Cardwell, ...
Superconductor Science and Technology 14 (4), L5, 2001
High speed unipolar switching resistance RAM (RRAM) technology
Y Hosoi, Y Tamai, T Ohnishi, K Ishihara, T Shibuya, Y Inoue, S Yamazaki, ...
2006 International Electron Devices Meeting, 1-4, 2006
Bandwidth control in a perovskite-type -correlated metal I. Evolution of the electronic properties and effective mass
IH Inoue, O Goto, H Makino, NE Hussey, M Ishikawa
Physical Review B 58 (8), 4372, 1998
Resistance switching in the metal deficient-type oxides: NiO and CoO
H Shima, F Takano, H Akinaga, Y Tamai, IH Inoue, H Takagi
Applied Physics Letters 91 (1), 012901, 2007
Strong electron correlation effects in nonvolatile electronic memory devices
MJ Rozenberg, IH Inoue, MJ Sanchez
Applied Physics Letters 88 (3), 033510, 2006
Metal oxide memories based on thermochemical and valence change mechanisms
JJ Yang, IH Inoue, T Mikolajick, CS Hwang
MRS bulletin 37 (2), 131-137, 2012
Electronic structure of Ca1− xSrxVO3: A tale of two energy scales
K Maiti, DD Sarma, MJ Rozenberg, IH Inoue, H Makino, O Goto, M Pedio, ...
Europhysics Letters 55 (2), 246, 2001
Superconductivity in Single-Crystalline Sr1-xLaxTiO3
H Suzuki, H Bando, Y Ootuka, I H. Inoue, T Yamamoto, K Takahashi, ...
Journal of the Physical Society of Japan 65 (6), 1529-1532, 1996
Tuning of the metal-insulator transition in electrolyte-gated thin films
S Asanuma, PH Xiang, H Yamada, H Sato, IH Inoue, H Akoh, A Sawa, ...
Applied Physics Letters 97 (14), 142110, 2010
Copper valence fluctuation in the organic conductor (dimethyl-N,N’-dicyanoquinonediimineCu studied by x-ray photoemission spectroscopy
IH Inoue, A Kakizaki, H Namatame, A Fujimori, A Kobayashi, R Kato, ...
Physical Review B 45 (11), 5828, 1992
Bandwidth control in a perovskite-type -correlated metal II. Optical spectroscopy
H Makino, IH Inoue, MJ Rozenberg, I Hase, Y Aiura, S Onari
Physical Review B 58 (8), 4384, 1998
Understanding the bulk electronic structure of
K Maiti, U Manju, S Ray, P Mahadevan, IH Inoue, C Carbone, DD Sarma
Physical Review B 73 (5), 052508, 2006
Control of resistance switching voltages in rectifying trilayer
H Shima, F Takano, H Muramatsu, H Akinaga, IH Inoue, H Takagi
Applied Physics Letters 92 (4), 043510, 2008
Bulk- and Surface-Sensitive High-Resolution Photoemission Study of Two Mott-Hubbard Systems: and
R Eguchi, T Kiss, S Tsuda, T Shimojima, T Mizokami, T Yokoya, ...
Physical review letters 96 (7), 076402, 2006
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