Field-effect transistor on with sputtered gate insulator K Ueno, IH Inoue, H Akoh, M Kawasaki, Y Tokura, H Takagi
Applied Physics Letters 83 (9), 1755-1757, 2003
754 2003 Nonvolatile memory with multilevel switching: a basic model MJ Rozenberg, IH Inoue, MJ Sanchez
Physical review letters 92 (17), 178302, 2004
686 2004 Electrostatic modification of novel materials CH Ahn, A Bhattacharya, M Di Ventra, JN Eckstein, CD Frisbie, ...
Reviews of Modern Physics 78 (4), 1185, 2006
603 2006 Colossal electroresistance of a thin film at room temperature A Odagawa, H Sato, IH Inoue, H Akoh, M Kawasaki, Y Tokura, T Kanno, ...
Physical Review B 70 (22), 224403, 2004
349 2004 Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution IH Inoue, S Yasuda, H Akinaga, H Takagi
Physical Review B 77 (3), 035105, 2008
310 2008 Systematic Development of the Spectral Function in the Mott-Hubbard System IH Inoue, I Hase, Y Aiura, A Fujimori, Y Haruyama, T Maruyama, ...
Physical review letters 74 (13), 2539, 1995
292 1995 High intergranular critical currents in metallic MgB2 superconductor M Kambara, NH Babu, ES Sadki, JR Cooper, H Minami, DA Cardwell, ...
Superconductor Science and Technology 14 (4), L5, 2001
243 2001 High speed unipolar switching resistance RAM (RRAM) technology Y Hosoi, Y Tamai, T Ohnishi, K Ishihara, T Shibuya, Y Inoue, S Yamazaki, ...
2006 International Electron Devices Meeting, 1-4, 2006
215 2006 Bandwidth control in a perovskite-type -correlated metal I. Evolution of the electronic properties and effective mass IH Inoue, O Goto, H Makino, NE Hussey, M Ishikawa
Physical Review B 58 (8), 4372, 1998
205 1998 Resistance switching in the metal deficient-type oxides: NiO and CoO H Shima, F Takano, H Akinaga, Y Tamai, IH Inoue, H Takagi
Applied Physics Letters 91 (1), 2007
188 2007 Strong electron correlation effects in nonvolatile electronic memory devices MJ Rozenberg, IH Inoue, MJ Sanchez
Applied Physics Letters 88 (3), 2006
158 2006 Metal oxide memories based on thermochemical and valence change mechanisms JJ Yang, IH Inoue, T Mikolajick, CS Hwang
MRS bulletin 37 (2), 131-137, 2012
148 2012 Electronic structure of Ca1− xSrxVO3: A tale of two energy scales K Maiti, DD Sarma, MJ Rozenberg, IH Inoue, H Makino, O Goto, M Pedio, ...
Europhysics Letters 55 (2), 246, 2001
141 2001 Superconductivity in Single-Crystalline S r 1-x L a x T i O 3 H Suzuki, H Bando, Y Ootuka, I H. Inoue, T Yamamoto, K Takahashi, ...
Journal of the Physical Society of Japan 65 (6), 1529-1532, 1996
141 1996 Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films S Asanuma, PH Xiang, H Yamada, H Sato, IH Inoue, H Akoh, A Sawa, ...
Applied Physics Letters 97 (14), 2010
132 2010 Bandwidth control in a perovskite-type -correlated metal II. Optical spectroscopy H Makino, IH Inoue, MJ Rozenberg, I Hase, Y Aiura, S Onari
Physical Review B 58 (8), 4384, 1998
102 1998 Copper valence fluctuation in the organic conductor (dimethyl-N ,N ’-dicyanoquinonediimine Cu studied by x-ray photoemission spectroscopy IH Inoue, A Kakizaki, H Namatame, A Fujimori, A Kobayashi, R Kato, ...
Physical Review B 45 (11), 5828, 1992
100 1992 Understanding the bulk electronic structure of K Maiti, U Manju, S Ray, P Mahadevan, IH Inoue, C Carbone, DD Sarma
Physical Review B 73 (5), 052508, 2006
96 2006 Control of resistance switching voltages in rectifying Pt∕ TiOx∕ Pt trilayer H Shima, F Takano, H Muramatsu, H Akinaga, IH Inoue, H Takagi
Applied Physics Letters 92 (4), 2008
91 2008 Bulk- and Surface-Sensitive High-Resolution Photoemission Study of Two Mott-Hubbard Systems: and R Eguchi, T Kiss, S Tsuda, T Shimojima, T Mizokami, T Yokoya, ...
Physical review letters 96 (7), 076402, 2006
90 2006