Field-effect transistor on with sputtered gate insulator K Ueno, IH Inoue, H Akoh, M Kawasaki, Y Tokura, H Takagi
Applied Physics Letters 83 (9), 1755-1757, 2003
747 2003 Nonvolatile memory with multilevel switching: a basic model MJ Rozenberg, IH Inoue, MJ Sanchez
Physical review letters 92 (17), 178302, 2004
674 2004 Electrostatic modification of novel materials CH Ahn, A Bhattacharya, M Di Ventra, JN Eckstein, CD Frisbie, ...
Reviews of Modern Physics 78 (4), 1185, 2006
574 2006 Colossal electroresistance of a thin film at room temperature A Odagawa, H Sato, IH Inoue, H Akoh, M Kawasaki, Y Tokura, T Kanno, ...
Physical Review B 70 (22), 224403, 2004
342 2004 Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution IH Inoue, S Yasuda, H Akinaga, H Takagi
Physical Review B 77 (3), 035105, 2008
296 2008 Systematic Development of the Spectral Function in the Mott-Hubbard System IH Inoue, I Hase, Y Aiura, A Fujimori, Y Haruyama, T Maruyama, ...
Physical review letters 74 (13), 2539, 1995
290 1995 High intergranular critical currents in metallic MgB2 superconductor M Kambara, NH Babu, ES Sadki, JR Cooper, H Minami, DA Cardwell, ...
Superconductor Science and Technology 14 (4), L5, 2001
237 2001 High speed unipolar switching resistance RAM (RRAM) technology Y Hosoi, Y Tamai, T Ohnishi, K Ishihara, T Shibuya, Y Inoue, S Yamazaki, ...
2006 International Electron Devices Meeting, 1-4, 2006
205 2006 Bandwidth control in a perovskite-type -correlated metal I. Evolution of the electronic properties and effective mass IH Inoue, O Goto, H Makino, NE Hussey, M Ishikawa
Physical Review B 58 (8), 4372, 1998
190 1998 Resistance switching in the metal deficient-type oxides: NiO and CoO H Shima, F Takano, H Akinaga, Y Tamai, IH Inoue, H Takagi
Applied Physics Letters 91 (1), 012901, 2007
185 2007 Strong electron correlation effects in nonvolatile electronic memory devices MJ Rozenberg, IH Inoue, MJ Sanchez
Applied Physics Letters 88 (3), 033510, 2006
156 2006 Metal oxide memories based on thermochemical and valence change mechanisms JJ Yang, IH Inoue, T Mikolajick, CS Hwang
MRS bulletin 37 (2), 131-137, 2012
139 2012 Electronic structure of Ca1− xSrxVO3: A tale of two energy scales K Maiti, DD Sarma, MJ Rozenberg, IH Inoue, H Makino, O Goto, M Pedio, ...
Europhysics Letters 55 (2), 246, 2001
134 2001 Superconductivity in Single-Crystalline S r 1-x L a x T i O 3 H Suzuki, H Bando, Y Ootuka, I H. Inoue, T Yamamoto, K Takahashi, ...
Journal of the Physical Society of Japan 65 (6), 1529-1532, 1996
133 1996 Tuning of the metal-insulator transition in electrolyte-gated thin films S Asanuma, PH Xiang, H Yamada, H Sato, IH Inoue, H Akoh, A Sawa, ...
Applied Physics Letters 97 (14), 142110, 2010
118 2010 Copper valence fluctuation in the organic conductor (dimethyl-N ,N ’-dicyanoquinonediimine Cu studied by x-ray photoemission spectroscopy IH Inoue, A Kakizaki, H Namatame, A Fujimori, A Kobayashi, R Kato, ...
Physical Review B 45 (11), 5828, 1992
100 1992 Bandwidth control in a perovskite-type -correlated metal II. Optical spectroscopy H Makino, IH Inoue, MJ Rozenberg, I Hase, Y Aiura, S Onari
Physical Review B 58 (8), 4384, 1998
94 1998 Understanding the bulk electronic structure of K Maiti, U Manju, S Ray, P Mahadevan, IH Inoue, C Carbone, DD Sarma
Physical Review B 73 (5), 052508, 2006
91 2006 Control of resistance switching voltages in rectifying trilayer H Shima, F Takano, H Muramatsu, H Akinaga, IH Inoue, H Takagi
Applied Physics Letters 92 (4), 043510, 2008
88 2008 Bulk- and Surface-Sensitive High-Resolution Photoemission Study of Two Mott-Hubbard Systems: and R Eguchi, T Kiss, S Tsuda, T Shimojima, T Mizokami, T Yokoya, ...
Physical review letters 96 (7), 076402, 2006
88 2006