Enrico Varesi
Enrico Varesi
Micron Semiconductors Italia
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Novel/spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
F Pellizzer, A Pirovano, F Ottogalli, M Magistretti, M Scaravaggi, P Zuliani, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 18-19, 2004
Overcoming Temperature Limitations in Phase Change Memories With Optimized
P Zuliani, E Varesi, E Palumbo, M Borghi, I Tortorelli, D Erbetta, ...
IEEE transactions on electron devices 60 (12), 4020-4026, 2013
Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 C
JL Battaglia, A Kusiak, V Schick, A Cappella, C Wiemer, M Longo, ...
Journal of Applied Physics 107 (4), 2010
Critical current enhancement in YBCO–Ag melt-textured composites: influence of microcrack density
E Mendoza, T Puig, E Varesi, AE Carrillo, J Plain, X Obradors
Physica C: Superconductivity 334 (1-2), 7-14, 2000
Bipolar switching in chalcogenide phase change memory
N Ciocchini, M Laudato, M Boniardi, E Varesi, P Fantini, AL Lacaita, ...
Scientific reports 6 (1), 29162, 2016
Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices
B Casarin, A Caretta, J Momand, BJ Kooi, MA Verheijen, V Bragaglia, ...
Scientific reports 6 (1), 22353, 2016
Thermal and electrical characterization of materials for phase-change memory cells
R Fallica, JL Battaglia, S Cocco, C Monguzzi, A Teren, C Wiemer, ...
Journal of Chemical & Engineering Data 54 (6), 1698-1701, 2009
Phase change memory cell with tubular heater and manufacturing method thereof
F Pellizzer, E Varesi, A Pirovano
US Patent 7,439,536, 2008
The design of rewritable ultrahigh density scanning-probe phase-change memories
CD Wright, L Wang, P Shah, MM Aziz, E Varesi, R Bez, M Moroni, ...
IEEE Transactions on Nanotechnology 10 (4), 900-912, 2010
Self-aligned process for manufacturing phase change memory cells
F Pellizzer, R Bez, E Varesi, A Pirovano, P Petruzza
US Patent 7,422,926, 2008
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, A Pirovano, ...
Chemistry of Materials 20 (11), 3557-3559, 2008
Effect of nitrogen doping on the thermal conductivity of GeTe thin films
R Fallica, E Varesi, L Fumagalli, S Spadoni, M Longo, C Wiemer
physica status solidi (RRL)–Rapid Research Letters 7 (12), 1107-1111, 2013
Atomic migration in phase change materials
G Novielli, A Ghetti, E Varesi, A Mauri, R Sacco
2013 IEEE International Electron Devices Meeting, 22.3. 1-22.3. 4, 2013
Statistical analysis and modeling of programming and retention in PCM arrays
D Mantegazza, D Ielmini, E Varesi, A Pirovano, AL Lacaita
2007 IEEE International Electron Devices Meeting, 311-314, 2007
The potential of chemical bonding to design crystallization and vitrification kinetics
C Persch, MJ Mller, A Yadav, J Pries, N Honn, P Kerres, S Wei, ...
Nature communications 12 (1), 4978, 2021
Quench in bulk HTS materials-application to the fault current limiter
P Tixador, X Obradors, R Tournier, T Puig, D Bourgault, X Granados, ...
Superconductor Science and Technology 13 (5), 493, 2000
Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond
A Pirovano, F Pellizzer, I Tortorelli, R Harrigan, M Magistretti, P Petruzza, ...
ESSDERC 2007-37th European Solid State Device Research Conference, 222-225, 2007
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
M Boniardi, D Ielmini, I Tortorelli, A Redaelli, A Pirovano, M Allegra, ...
Solid-state electronics 58 (1), 11-16, 2011
Pulsed laser deposition of high critical current density YBa2Cu3O7− x/CeO2/Ni–W architecture for coated conductors applications
E Varesi, G Celentano, T Petrisor, V Boffa, L Ciontea, V Galluzzi, ...
Superconductor Science and Technology 16 (4), 498, 2003
Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond
A Pirovano, F Pellizzer, I Tortorelli, A Rigan, R Harrigan, M Magistretti, ...
Solid-State Electronics 52 (9), 1467-1472, 2008
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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