The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
381 2020 Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures J Bai, T Wang, S Sakai
Journal of Applied physics 88 (8), 4729-4733, 2000
177 2000 A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE S Sakai, T Wang, Y Morishima, Y Naoi
Journal of crystal growth 221 (1-4), 334-337, 2000
170 2000 Role of dislocation in InGaN phase separation T Sugahara, M Hao, T Wang, D Nakagawa, Y Naoi, K Nishino, S Sakai
Japanese journal of applied physics 37 (10B), L1195, 1998
150 1998 Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes T Wang, J Bai, S Sakai, JK Ho
Applied Physics Letters 78 (18), 2617-2619, 2001
146 2001 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate T Wang, YH Liu, YB Lee, JP Ao, J Bai, S Sakai
Applied Physics Letters 81 (14), 2508-2510, 2002
145 2002 Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells T Wang, D Nakagawa, J Wang, T Sugahara, S Sakai
Applied physics letters 73 (24), 3571-3573, 1998
144 1998 Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission T Wang
Semiconductor Science and Technology 31 (9), 093003, 2016
129 2016 Luminescence of nanometer‐sized amorphous silicon nitride solids C Mo, L Zhang, C Xie, T Wang
Journal of applied physics 73 (10), 5185-5188, 1993
127 1993 Valence band offset of InN∕ AlN heterojunctions measured by x-ray photoelectron spectroscopy PDC King, TD Veal, PH Jefferson, CF McConville, T Wang, PJ Parbrook, ...
Applied physics letters 90 (13), 2007
117 2007 A study of dislocations in AlN and GaN films grown on sapphire substrates J Bai, T Wang, PJ Parbrook, KB Lee, AG Cullis
Journal of Crystal Growth 282 (3-4), 290-296, 2005
104 2005 Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods Q Wang, J Bai, YP Gong, T Wang
Journal of Physics D: Applied Physics 44 (39), 395102, 2011
103 2011 Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells JP O’Neill, IM Ross, AG Cullis, T Wang, PJ Parbrook
Applied Physics Letters 83 (10), 1965-1967, 2003
101 2003 Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes T Wang, YH Liu, YB Lee, Y Izumi, JP Ao, J Bai, HD Li, S Sakai
Journal of crystal growth 235 (1-4), 177-182, 2002
95 2002 High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures J Bruckbauer, PR Edwards, T Wang, RW Martin
Applied Physics Letters 98 (14), 2011
91 2011 Characterization of InGaN-based nanorod light emitting diodes with different indium compositions J Bai, Q Wang, T Wang
Journal of Applied Physics 111 (11), 2012
90 2012 Electron mobility exceeding T Wang, Y Ohno, M Lachab, D Nakagawa, T Shirahama, S Sakai, H Ohno
Applied physics letters 74 (23), 3531-3533, 1999
89 1999 Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition T Wang, T Shirahama, HB Sun, HX Wang, J Bai, S Sakai, H Misawa
Applied Physics Letters 76 (16), 2220-2222, 2000
88 2000 Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures T Wang, H Saeki, J Bai, T Shirahama, M Lachab, S Sakai, P Eliseev
Applied Physics Letters 76 (13), 1737-1739, 2000
86 2000 V-shaped defects in InGaN/GaN multiquantum wells S Mahanty, M Hao, T Sugahara, RSQ Fareed, Y Morishima, Y Naoi, ...
Materials Letters 41 (2), 67-71, 1999
79 1999 
