How frequency injection locking can train oscillatory neural networks to compute in phase A Todri-Sanial, S Carapezzi, C Delacour, M Abernot, T Gil, E Corti, ...
IEEE transactions on neural networks and learning systems 33 (5), 1996-2009, 2021
33 2021 Synthesis of a magnetically separable LDH-based S-scheme nano-heterojunction for the activation of peroxymonosulfate towards the efficient visible-light photodegradation of … A Fazli, M Brigante, A Khataee, G Mailhot
Applied Surface Science 559, 149906, 2021
27 2021 Energy-Performance Assessment of Oscillatory Neural Networks Based on VO Devices for Future Edge AI Computing C Delacour, S Carapezzi, M Abernot, A Todri-Sanial
IEEE Transactions on Neural Networks and Learning Systems, 2023
25 2023 A roadmap for controlled and efficient n‐type doping of self‐assisted GaAs nanowires grown by molecular beam epitaxy M Orrù, E Repiso, S Carapezzi, A Henning, S Roddaro, A Franciosi, ...
Advanced Functional Materials 26 (17), 2836-2845, 2016
24 2016 Oscillatory neural networks for edge ai computing C Delacour, S Carapezzi, M Abernot, G Boschetto, N Azemard, J Salles, ...
2021 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 326-331, 2021
20 2021 Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects S Carapezzi, A Castaldini, F Fabbri, F Rossi, M Negri, G Salviati, ...
Journal of Materials Chemistry C 4 (35), 8226-8234, 2016
20 2016 Advanced design methods from materials and devices to circuits for brain-inspired oscillatory neural networks for edge computing S Carapezzi, G Boschetto, C Delacour, E Corti, A Plews, A Nejim, S Karg, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 11 (4 …, 2021
17 2021 Bundling of GaAs nanowires: a case of adhesion-induced self-assembly of nanowires S Carapezzi, G Priante, V Grillo, L Montès, S Rubini, A Cavallini
ACS nano 8 (9), 8932-8941, 2014
16 2014 Graphene and carbon nanotubes for electronics nanopackaging G Boschetto, S Carapezzi, A Todri-Sanial
IEEE Open Journal of Nanotechnology 2, 120-128, 2021
14 2021 Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD L Selmi, E Caruso, S Carapezzi, M Visciarelli, E Gnani, N Zagni, P Pavan, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2017
13 2017 Multi-scale modeling and simulation flow for oscillatory neural networks for edge computing S Carapezzi, C Delacour, G Boschetto, E Corti, M Abernot, A Nejim, T Gil, ...
2021 19th IEEE International New Circuits and Systems Conference (NEWCAS), 1-5, 2021
8 2021 Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications S Carapezzi, C Delacour, A Plews, A Nejim, S Karg, A Todri-Sanial
Scientific Reports 12 (1), 19377, 2022
6 2022 The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires S Carapezzi, A Cavallini
Beilstein Journal of Nanotechnology 10 (1), 2094-2102, 2019
6 2019 Nanostructured surfaces investigated by quantitative morphological studies M Perani, S Carapezzi, GR Mutta, D Cavalcoli
Nanotechnology 27 (18), 185703, 2016
6 2016 Properties of Si nanowires as a function of their growth conditions A Cavallini, S Carapezzi, A Castaldini, A Irrera
Physica B: Condensed Matter 439, 41-45, 2014
6 2014 TCAD mobility model of III-V short-channel double-gate FETs including ballistic corrections S Carapezzi, E Caruso, A Gnudi, P Palestri, S Reggiani, E Gnani
IEEE Transactions on Electron Devices 64 (12), 4882-4888, 2017
5 2017 A mixed-signal oscillatory neural network for scalable analog computations in phase domain C Delacour, S Carapezzi, G Boschetto, M Abernot, T Gil, N Azemard, ...
Neuromorphic Computing and Engineering 3 (3), 034004, 2023
4 2023 VO2-based oscillatory ising machine: the role of external temperature on performance C Delacour, S Carapezzi, G Boschetto, M Abernot, T Gil, A Todri-Sanial
NANO 2022-22nd IEEE International Conference on Nanotechnology, In press?, 2022
4 2022 Capillary-force-driven self-assembly of carbon nanotubes: from ab initio calculations to modeling of self-assembly S Carapezzi, G Boschetto, A Todri-Sanial
Nanoscale Advances 4 (19), 4131-4137, 2022
4 2022 3D TCAD modeling of NO2 CNT FET sensors S Carapezzi, S Eberle, S Reggiani, E Gnani, C Roman, C Hierold, ...
2018 48th European Solid-State Device Research Conference (ESSDERC), 222-225, 2018
4 2018