| The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes D Zhu, J Xu, AN Noemaun, JK Kim, EF Schubert, MH Crawford, ... Applied Physics Letters 94 (8), 2009 | 227 | 2009 |
| Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes J Xu, MF Schubert, AN Noemaun, D Zhu, JK Kim, EF Schubert, MH Kim, ... Applied Physics Letters 94 (1), 2009 | 204 | 2009 |
| Enhanced electron capture and symmetrized carrier distribution in GalnN light-emitting diodes having tailored barrier doping ZHU DI, AN NOEMAUN, MF SCHUBERT, J CHO, EF SCHUBERT, ... Applied physics letters 96 (12), 2010 | 168 | 2010 |
| Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars JK Kim, AN Noemaun, FW Mont, D Meyaard, EF Schubert, DJ Poxson, ... Applied Physics Letters 93 (22), 2008 | 86 | 2008 |
| Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes W Lee, MH Kim, D Zhu, AN Noemaun, JK Kim, EF Schubert Journal of Applied Physics 107 (6), 2010 | 43 | 2010 |
| Inductively coupled plasma etching of graded-refractive-index layers of TiO2 and SiO2 using an ITO hard mask AN Noemaun, FW Mont, J Cho, EF Schubert, GB Kim, C Sone Journal of Vacuum Science & Technology A 29 (5), 2011 | 30 | 2011 |
| Light emitting device with fine pattern JK Kim, FW Mont, AN Noemaun, DJ Poxson, EF Schubert, H Kim, C Sone US Patent App. 12/591,011, 2010 | 24 | 2010 |
| Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GaInN light-emitting diodes AN Noemaun, FW Mont, GB Lin, J Cho, E Fred Schubert, G Bum Kim, ... Journal of Applied Physics 110 (5), 2011 | 23 | 2011 |
| High efficiency III-nitride light-emitting diodes M Crawford, D Koleske, J Cho, D Zhu, A Noemaun, MF Schubert, ... US Patent 8,451,877, 2013 | 13 | 2013 |
| Emission pattern control and polarized light emission through patterned graded-refractive-index coatings on GaInN light-emitting diodes M Ma, AN Noemaun, J Cho, EF Schubert, GB Kim, C Sone Optics Express 20 (15), 16677-16683, 2012 | 11 | 2012 |
| Encapsulation shape with non-rotational symmetry designed for extraction of polarized light from unpolarized sources MF Schubert, A Noemaun, S Chhajed, JK Kim, EF Schubert, C Sone Optics Express 15 (16), 10452-10457, 2007 | 8 | 2007 |
| 22nm technology yield optimization using multivariate 3D virtual fabrication B Cipriany, B Jagannathan, G Costrini, A Noemaun, K Onishi, ... 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 5 | 2013 |
| Encapsulant shapes for light emitting devices lacking rotational symmetry designed to enhance extraction of light with a particular linear polarization MF Schubert, A Noemaun, S Chhajed, JK Kim, EF Schubert, C Sone US Patent 7,819,557, 2010 | 5 | 2010 |
| Asymmetric stressor DRAM RK Dasaka, S Narasimha, AN Noemaun, KA Nummy, K Onishi, ... US Patent 9,240,482, 2016 | 4 | 2016 |
| Enhanced light‐extraction from a GaN waveguide using micro‐pillar TiO2SiO2 graded‐refractive‐index layers FW Mont, AJ Fischer, AN Noemaun, DJ Poxson, J Cho, EF Schubert, ... physica status solidi (a) 209 (11), 2277-2280, 2012 | 3 | 2012 |
| Semiconductor light emitting device GB Kim, M Ma, A Noemaun, EF Schubert, J Cho, CS Sone, ST Kim, ... US Patent App. 13/759,585, 2014 | 2 | 2014 |
| Enhanced Light-Extraction from a GaN Waveguide using Micro-Pillar TiO2-SiO2 Graded-Refractive-Index Layers. AJ Fischer, MH Crawford, DD Koleske, FW Mont, AN Noemaun, ... Applied Physics Letters, 2011 | | 2011 |
| Optically Functional Surfaces for High Light-Extraction and Control of the Pattern of Light Emission from Gallium Indium Nitride/Gallium Nitride Light-Emitting Diodes AN Noemaun Rensselaer Polytechnic Institute, 2011 | | 2011 |
| Growth and characteristics of GaInN W LEE, MH KIM, ZHU DI, AN NOEMAUN, KYUKIM JONG, EF SCHUBERT Journal of applied physics 107 (6), 2010 | | 2010 |
| The origin of the high diode-ideality factors in GalnN ZHU DI, J XU, AN NOEMAUN, JKYU KIM, EF SCHUBERT, ... Applied physics letters 94 (8), 2009 | | 2009 |
