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Hidehiro Asai
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High temperature superconductor terahertz emitters: Fundamental physics and its applications
T Kashiwagi, M Tsujimoto, T Yamamoto, H Minami, K Yamaki, ...
Japanese Journal of Applied Physics 51 (1R), 010113, 2011
1372011
Tunable terahertz emission from the intrinsic Josephson junctions in acute isosceles triangular Bi2Sr2CaCu2O8+δ mesas
K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, ...
Optics Express 21 (2), 2171-2184, 2013
742013
Three-dimensional numerical analysis of terahertz radiation emitted from intrinsic Josephson junctions with hot spots
H Asai, M Tachiki, K Kadowaki
Physical review B 85 (6), 064521, 2012
482012
Quantum terahertz electronics (QTE) using coherent radiation from high temperature superconducting Bi2Sr2CaCu2O8+ δ intrinsic Josephson junctions
K Kadowaki, M Tsujimoto, K Delfanazari, T Kitamura, M Sawamura, ...
Physica C: Superconductivity 491, 2-6, 2013
432013
Intense terahertz emission from intrinsic Josephson junctions by external heat control
H Asai, S Kawabata
Applied Physics Letters 104 (11), 2014
412014
Effect of Bias Electrode Position on Terahertz Radiation From Pentagonal Mesas of Superconducting
K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, ...
IEEE transactions on terahertz science and technology 5 (3), 505-511, 2015
342015
Terahertz oscillating devices based upon the intrinsic Josephson junctions in a high temperature superconductor
K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, K Ishida, ...
Journal of Infrared, Millimeter, and Terahertz Waves 35, 131-146, 2014
312014
Study of coherent and continuous terahertz wave emission in equilateral triangular mesas of superconducting Bi2Sr2CaCu2O8+ δ intrinsic Josephson junctions
K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, ...
Physica C: Superconductivity 491, 16-19, 2013
292013
Perspective of negative capacitance FinFETs investigated by transient TCAD simulation
H Ota, K Fukuda, T Ikegami, J Hattori, H Asai, S Migita, A Toriumi
2017 IEEE International Electron Devices Meeting (IEDM), 15.2. 1-15.2. 4, 2017
282017
Proposal of terahertz patch antenna fed by intrinsic Josephson junctions
H Asai, M Tachiki, K Kadowaki
Applied physics letters 101 (11), 2012
252012
A TCAD device simulator for exotic materials and its application to a negative-capacitance FET
T Ikegami, K Fukuda, J Hattori, H Asai, H Ota
Journal of Computational Electronics 18, 534-542, 2019
212019
Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator
J Hattori, K Fukuda, T Ikegami, H Ota, S Migita, H Asai, A Toriumi
Japanese Journal of Applied Physics 57 (4S), 04FD07, 2018
192018
Effects of lasing in a one-dimensional quantum metamaterial
H Asai, S Savel'ev, S Kawabata, AM Zagoskin
Physical Review B 91 (13), 134513, 2015
192015
Multidomain dynamics of ferroelectric polarization and its coherency-breaking in negative capacitance field-effect transistors
H Ota, T Ikegami, K Fukuda, J Hattori, H Asai, K Endo, S Migita, A Toriumi
2018 IEEE International Electron Devices Meeting (IEDM), 9.1. 1-9.1. 4, 2018
132018
Control of circularly polarized THz wave from intrinsic Josephson junctions by local heating
H Asai, S Kawabata
Applied Physics Letters 110 (13), 2017
132017
Effects of magnetic fields on the coherent THz emission from mesas of single crystal Bi2Sr2CaCu2O8+ δ
T Kitamura, T Kashiwagi, M Tsujimoto, K Delfanazari, M Sawamura, ...
Physica C: Superconductivity 494, 117-120, 2013
132013
Theory of macroscopic quantum tunneling with Josephson-Leggett collective excitations in multiband superconducting Josephson junctions
H Asai, Y Ota, S Kawabata, M Machida, F Nori
Physical Review B 89 (22), 224507, 2014
122014
Experimental and theoretical studies of mesas of several geometries for terahertz wave radiation from the intrinsic Josephson junctions in superconducting Bi2Sr2CaCu2O …
K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, ...
2012 37th International Conference on Infrared, Millimeter, and Terahertz …, 2012
112012
Demonstrating performance improvement of complementary TFET circuits by Ion enhancement based on isoelectronic trap technology
T Mori, H Asai, J Hattori, K Fukuda, S Otsuka, Y Morita, S O'uchi, H Fuketa, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2016
102016
Steep switching less than 15 mV dec− 1 in silicon-on-insulator tunnel FETs by a trimmed-gate structure
H Asai, T Mori, T Matsukawa, J Hattori, K Endo, K Fukuda
Japanese Journal of Applied Physics 58 (SB), SBBA16, 2019
92019
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