Daniel M. Fleetwood

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Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityEmail verificata su vanderbilt.edu
Sokrates T PantelidesVanderbilt UniversityEmail verificata su vanderbilt.edu
Enxia ZhangVanderbilt UniversityEmail verificata su vanderbilt.edu
Michael AllesVanderbilt UniversityEmail verificata su vanderbilt.edu
Robert A. WellerVanderbilt UniversityEmail verificata su vanderbilt.edu
Sergey RashkeevPrincipal Scientist, Acting Research Director, Qatar Environment & Energy Research InstituteEmail verificata su qf.org.qa
cher xuan zhangvanderbilt UniversityEmail verificata su vanderbilt.edu
Yevgeniy PuzyrevData & Applied Scientist, MicrosoftEmail verificata su microsoft.com
blair tuttlePenn State Erie; The Behrend CollegeEmail verificata su psu.edu
Dimitri LintenImecEmail verificata su imec.be
John H. ScofieldProfessor of Physics, Oberlin CollegeEmail verificata su oberlin.edu
John D. CresslerProfessor of Electrical and Computer Engineering, Georgia TechEmail verificata su ece.gatech.edu
Tania RoyUniversity of Central FloridaEmail verificata su ucf.edu
Umesh MishraUCSBEmail verificata su ece.ucsb.edu
Xiao ShenAssistant Professor of Physics, University of MemphisEmail verificata su memphis.edu
Jim SpeckProfessor of Materials, UCSBEmail verificata su ucsb.edu
Lloyd MassengillVanderbilt UniversityEmail verificata su vanderbilt.edu
Matthew BeckChemical and Materials Engineering, University of KentuckyEmail verificata su engr.uky.edu
Leonard BrillsonThe Ohio State UniversityEmail verificata su osu.edu
jean-luc lerayanaxagoras2kEmail verificata su anaxagoras2k.fr

Daniel M. Fleetwood

Professor of Electrical Engineering, Vanderbilt University

Email verificata su vanderbilt.edu - Home page

radiation effects defects microelectronics low frequency noise


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Radiation effects in MOS oxides JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ... IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008	659	2008
Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ... Journal of Applied Physics 73 (10), 5058-5074, 1993	493	1993
'Border traps' in MOS devices DM Fleetwood IEEE transactions on nuclear science 39 (2), 269-271, 1992	393	1992
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ... IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994	343	1994
Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ... IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002	262	2002
Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices DM Fleetwood IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013	254	2013
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments DM Fleetwood, PS Winokur, JR Schwank IEEE Transactions on Nuclear Science 35 (6), 1497-1505, 1988	228	1988
1/f noise and radiation effects in MOS devices DM Fleetwood, TL Meisenheimer, JH Scofield IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994	215	1994
Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ... IEEE transactions on nuclear science 40 (6), 1276-1285, 1993	209	1993
ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood 2008 European Conference on Radiation and Its Effects on Components and …, 2008	200	2008
Non-volatile memory device based on mobile protons in SiO 2 thin films K Vanheusden, WL Warren, RAB Devine, DM Fleetwood, JR Schwank, ... Nature 386 (6625), 587-589, 1997	195	1997
Defect generation by hydrogen at the Si-SiO 2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 87 (16), 165506, 2001	194	2001
Border traps: Issues for MOS radiation response and long-term reliability DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ... Microelectronics Reliability 35 (3), 403-428, 1995	194	1995
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous S i O 2 ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 89 (28), 285505, 2002	188	2002
Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors DM Fleetwood, JH Scofield Physical review letters 64 (5), 579, 1990	185	1990
Oxide, interface, and border traps in thermal, N₂O, and N₂O‐nitrided oxides DM Fleetwood, NS Saks Journal of applied physics 79 (3), 1583-1594, 1996	181	1996
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996	180	1996
An overview of high-temperature electronic device technologies and potential applications PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994	178	1994
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes IEEE transactions on nuclear science 38 (6), 1187-1194, 1991	177	1991
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ... IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002	166	2002

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