Daniel M. Fleetwood
Daniel M. Fleetwood
Professor of Electrical Engineering, Vanderbilt University
Email verificata su vanderbilt.edu - Home page
Titolo
Citata da
Citata da
Anno
Radiation effects in MOS oxides
JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ...
IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008
6592008
Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices
DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ...
Journal of Applied Physics 73 (10), 5058-5074, 1993
4931993
'Border traps' in MOS devices
DM Fleetwood
IEEE transactions on nuclear science 39 (2), 269-271, 1992
3931992
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
3431994
Physical model for enhanced interface-trap formation at low dose rates
SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ...
IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002
2622002
Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices
DM Fleetwood
IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013
2542013
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
DM Fleetwood, PS Winokur, JR Schwank
IEEE Transactions on Nuclear Science 35 (6), 1497-1505, 1988
2281988
1/f noise and radiation effects in MOS devices
DM Fleetwood, TL Meisenheimer, JH Scofield
IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994
2151994
Charge separation for bipolar transistors
SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE transactions on nuclear science 40 (6), 1276-1285, 1993
2091993
ELDRS in bipolar linear circuits: A review
RL Pease, RD Schrimpf, DM Fleetwood
2008 European Conference on Radiation and Its Effects on Components and …, 2008
2002008
Non-volatile memory device based on mobile protons in SiO 2 thin films
K Vanheusden, WL Warren, RAB Devine, DM Fleetwood, JR Schwank, ...
Nature 386 (6625), 587-589, 1997
1951997
Defect generation by hydrogen at the Si-SiO 2 interface
SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506, 2001
1942001
Border traps: Issues for MOS radiation response and long-term reliability
DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ...
Microelectronics Reliability 35 (3), 403-428, 1995
1941995
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous S i O 2
ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 89 (28), 285505, 2002
1882002
Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors
DM Fleetwood, JH Scofield
Physical review letters 64 (5), 579, 1990
1851990
Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides
DM Fleetwood, NS Saks
Journal of applied physics 79 (3), 1583-1594, 1996
1811996
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides
DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf
IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996
1801996
An overview of high-temperature electronic device technologies and potential applications
PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian
IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994
1781994
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices
MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes
IEEE transactions on nuclear science 38 (6), 1187-1194, 1991
1771991
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002
1662002
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20