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Takeo Maruyama
Takeo Maruyama
School of Electrical and Computer Engineering, Kanazawa University
Verified email at ec.t.kanazawa-u.ac.jp - Homepage
Title
Cited by
Cited by
Year
Reduction of wavelength dependence of coupling characteristics using Si optical waveguide curved directional coupler
H Morino, T Maruyama, K Iiyama
Journal of lightwave technology 32 (12), 2188-2192, 2014
1032014
GaInAsP/InP membrane lasers for optical interconnects
S Arai, N Nishiyama, T Maruyama, T Okumura
Selected Topics in Quantum Electronics, IEEE Journal of, 1-9, 2011
782011
GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate
T Maruyama, T Okumura, S Sakamoto, K Miura, Y Nishimoto, S Arai
Optics Express 14 (18), 8184-8188, 2006
712006
Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18- m CMOS Process
K Iiyama, H Takamatsu, T Maruyama
Photonics Technology Letters, IEEE 22 (12), 932-934, 2010
662010
Optical wireless power transmission using Si photovoltaic through air, water, and skin
AWS Putra, M Tanizawa, T Maruyama
IEEE Photonics Technology Letters 31 (2), 157-160, 2018
482018
Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits
T Okumura, M Kurokawa, M Shirao, D Kondo, H Ito, N Nishiyama, ...
Optics Express 17 (15), 12564-12570, 2009
472009
High resolution FMCW reflectometry using a single-mode vertical cavity surface emitting laser
K Iiyama, SI Matsui, T Kobayashi, T Maruyama
Photonics Technology Letters, IEEE, 1-1, 2011
452011
Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers
A Haque, H Yagi, T Sano, T Maruyama, S Arai
Journal of applied physics 94, 2018, 2003
452003
GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth processes
H Yagi, T Sano, K Ohira, D Plumwongrot, T Maruyama, A Haque, ...
Japanese journal of applied physics 43 (6R), 3401, 2004
362004
Loss reduction of Si wire waveguide fabricated by edge-enhancement writing for electron beam lithography and reactive ion etching using double layered resist mask with C60
K Inoue, D Plumwongrot, N Nishiyama, S Sakamoto, H Enomoto, ...
Japanese Journal of Applied Physics 48 (3R), 030208, 2009
322009
85 C continuous-wave operation of GaInAsP/InP-membrane buried heterostructure distributed feedback lasers with polymer cladding layer
S Sakamoto, H Naitoh, M Ohtake, Y Nishimoto, T Maruyama, N Nishiyama, ...
Japanese Journal of Applied Physics 46 (12L), L1155, 2007
292007
Injection-Type GaInAsP–InP–Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate
T Okumura, T Maruyama, H Yonezawa, N Nishiyama, S Arai
Photonics Technology Letters, IEEE 21 (5), 283-285, 2009
262009
Single-mode operation of GaInAsP/InP-membrane distributed feedback lasers bonded on silicon-on-insulator substrate with rib-waveguide structure
T Okumura, T Maruyama, M Kanemaru, S Sakamoto, S Arai
Japanese Journal of Applied Physics 46 (12L), L1206, 2007
262007
Fabrication and characterization of amorphous polyethylene terephthalate optical waveguides
K Iiyama, T Ishida, Y Ono, T Maruyama, T Yamagishi
Photonics Technology Letters, IEEE, 1-1, 2011
232011
Reduced Temperature Dependence of Lasing Wavelength in Membrane Buried Heterostructure DFB Lasers With Polymer Cladding Layers
S Sakamoto, H Kawashima, H Naitoh, S Tamura, T Maruyama, S Arai
Photonics Technology Letters, IEEE 19 (5), 291-293, 2007
182007
Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method
H Yagi, T Sano, K Ohira, T Maruyama, A Haque, S Arai
Japanese journal of applied physics 42 (7A), L748-L750, 2003
182003
Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF 2/Si (111)
MWM Watanabe, TMT Matsunuma, TMT Maruyama, YMY Maeda
Japanese journal of applied physics 37 (5B), L591, 1998
181998
Low-threshold-current operation of 1540 nm GaInAsP∕ InP distributed-feedback lasers with multiple-quantum-wire active regions
H Yagi, K Miura, Y Nishimoto, D Plumwongrot, K Ohira, T Maruyama, ...
Applied Physics Letters 87 (22), 2005
162005
Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF2 on Si (111) Substrate Prepared by Rapid Thermal Annealing
T Maruyama, N Nakamura, M Watanabe
Japanese Journal of Applied Physics 39, 1996, 2000
162000
Detection of hot electron current with scanning hot electron microscopy
F Vazquez, D Kobayashi, I Kobayashi, Y Miyamoto, K Furuya, ...
Applied physics letters 69, 2196, 1996
151996
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