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IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008
362 2008 Electron transport and full-band electron-phonon interactions in graphene A Akturk, N Goldsman
Journal of Applied Physics 103 (5), 2008
360 2008 Method and system for locating and monitoring first responders BE Funk, A Bandyopadhyay, EA Kohn, N Goldsman, CA Teolis, ...
US Patent 8,688,375, 2014
341 2014 Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes G Pennington, N Goldsman
Physical Review B 68 (4), 045426, 2003
332 2003 F-inverted compact antenna for wireless sensor networks and manufacturing method B Yang, FM Vanin, X Shao, Q Balzano, N Goldsman
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238 2011 A physical model of high temperature 4H-SiC MOSFETs S Potbhare, N Goldsman, A Lelis, JM McGarrity, FB McLean, D Habersat
IEEE Transactions on Electron devices 55 (8), 2029-2040, 2008
212 2008 An antenna co-design dual band RF energy harvester B Li, X Shao, N Shahshahan, N Goldsman, T Salter, GM Metze
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162 2013 Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ...
IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008
148 2008 Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors SK Powell, N Goldsman, JM McGarrity, J Bernstein, CJ Scozzie, A Lelis
Journal of Applied Physics 92 (7), 4053-4061, 2002
146 2002 Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity
Journal of Applied Physics 100 (4), 2006
140 2006 Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs A Akturk, JM McGarrity, S Potbhare, N Goldsman
IEEE Transactions on Nuclear Science 59 (6), 3258-3264, 2012
138 2012 A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation N Goldsman, L Henrickson, J Frey
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138 1991 Thin flexible rechargeable electrochemical energy cell and method of fabrication MC Peckerar, N Goldsman, Y Ngu, Z Dilli, GM Metze
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IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994
92 1994 Device modeling at cryogenic temperatures: Effects of incomplete ionization A Akturk, J Allnutt, Z Dilli, N Goldsman, M Peckerar
IEEE transactions on electron devices 54 (11), 2984-2990, 2007
90 2007 Electron transport and velocity oscillations in a carbon nanotube A Akturk, G Pennington, N Goldsman, A Wickenden
IEEE Transactions on Nanotechnology 6 (4), 469-474, 2007
90 2007 Low-field semiclassical carrier transport in semiconducting carbon nanotubes G Pennington, N Goldsman
Physical Review B 71 (20), 205318, 2005
87 2005 A focused asymmetric metal–insulator–metal tunneling diode: fabrication, DC characteristics and RF rectification analysis K Choi, F Yesilkoy, G Ryu, SH Cho, N Goldsman, M Dagenais, ...
IEEE Transactions on Electron Devices 58 (10), 3519-3528, 2011
85 2011 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations W Liang, N Goldsman, I Mayergoyz, PJ Oldiges
IEEE Transactions on Electron Devices 44 (2), 257-267, 1997
85 1997 