Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x AS Saidov, DV Saparov, SN Usmonov, A Kutlimratov, JM Abdiev, ...
Advances in Condensed Matter Physics 2021, 1-8, 2021
27 * 2021 Growth, structure, and properties of GaAs-based (GaAs)1–x –y (Ge2 ) x (ZnSe) y epitaxial films SZ Zaynabidinov, AS Saidov, AY Leiderman, MU Kalanov, SN Usmonov, ...
Semiconductors 50, 59-65, 2016
18 2016 Growth of (InSb)1 − x (Sn2 ) x films on GaAs substrates by liquid-phase epitaxy AS Saidov, MS Saidov, SN Usmonov, UP Asatova
Semiconductors 44, 938-945, 2010
17 2010 INFLUENCE OF WEAK GRADED GAP ON INJECTION DIFFUSION REGIMES OF CURRENT TRANSPORT IN SEMICONDUCTOR PN-STRUCTURES A LEYDERMAN, AS Saidov, S USMONOV, JM Abdiyev, QT Suyarov
Congress Dates, 40, 2021
16 2021 Thermovoltaic properties of technical silicon melted by solar radiation AS Saidov, AA Abakumov, MS Saidov, SN Usmonov, KT Kholikov
Applied Solar Energy 43, 266-267, 2007
16 2007 Structure and photoelectric properties of Si1 − x Sn x epilayers AS Saidov, SN Usmonov, M Kalanov, KM Madaminov
Technical physics letters 36, 827-829, 2010
14 2010 Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties AS Saidov, MS Saidov, SN Usmonov, AY Leiderman, MU Kalanov, ...
Physics of the Solid State 53, 2012-2021, 2011
13 2011 I–V characteristic of p-n structures based on a continuous solid solutions (Si2 )1 − xx (CdS) x AS Saidov, AY Leyderman, SN Usmonov, KT Kholikov
Semiconductors 43, 416-418, 2009
13 2009 Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs) 1− x (ZnSe) x with Nanocrystals AS Saidov, SN Usmonov, DV Saparov
Advances in Materials Science and Engineering 2019, 2019
11 2019 Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04) AS Saidov, SN Usmonov, MU Kalanov, AN Kurmantayev, AN Bahtybayev
Physics of the Solid State 55, 45-53, 2013
11 2013 Possibility of obtaining the (GaSb)1 − x (Si2 ) x films on silicon substrates by the method of liquid-phase epitaxy SN Usmonov, AS Saidov, AY Leyderman, D Saparov, KT Kholikov
Semiconductors 43, 1092-1097, 2009
11 2009 Study of the current-voltage characteristic of the n -CdS/p -CdTe heterostructure depending on temperature SN Usmonov, SA Mirsagatov, AY Leyderman
Semiconductors 44, 313-317, 2010
10 2010 Spectral sensitivity of (Si2 )1 − x (CdS)x solid solutions AS Saidov, SN Usmonov, KT Kholikov, D Saparov
Technical Physics Letters 33, 853-855, 2007
10 2007 Synthesis and characterization of (Si2 )1−x −y (Ge2 ) x (GaAs) y continuous solid solutions AS Saidov, SN Usmonov, KT Kholikov, D Saparov
Technical Physics Letters 33, 701-703, 2007
10 2007 Influence of the varizonal Si1-xGex solid solution composition on the thermovoltaic effect in n–Si–p–Si (1-x) Gex structure AS Saidov, SN Usmonov, AB Karshiev, JM Abdiev
IOP Conference Series: Earth and Environmental Science 1112 (1), 012040, 2022
9 2022 Liquid-phase epitaxy of the (Si 2) 1− x− y (Ge 2) x (GaAs) y substitutional solid solution (0≤ x≤ 0.91, 0≤ y≤ 0.94) and their electrophysical properties AS Saidov, SN Usmonov, MS Saidov
Semiconductors 49, 547-550, 2015
9 2015 Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties AS Saidov, SN Usmonov, UP Asatova
Semiconductors 46, 1088-1095, 2012
9 2012 Pis’ ma v Zh AS Saidov, SN Usmonov, KT Kholikov, D Saparov
Tekhn. Fiz 33 (20), 5-10, 2007
9 2007 Photothermovoltaic Effect in p -Si−n -(Si2 )1 – x – y 2 )x y AS Saidov, SN Usmonov, KA Amonov, S Niyazov, AI Khudayberdiyeva
Applied Solar Energy 55, 265-268, 2019
8 2019 Effect of injection depletion in p-n heterostructures based on solid solutions (Si 2) 1− x− y (Ge 2) x (GaAs) y,(Si 2) 1− x (CdS) x,(InSb) 1− x (Sn 2) x, and CdTe 1− x S x SN Usmonov, AS Saidov, AY Leiderman
Physics of the Solid State 56, 2401-2407, 2014
7 2014 
A.S. SaidovPhysical-Technical InstituteEmail verificata su uzsci.net
