Krishna Mandal

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Sandeep Kumar ChaudhuriUniversity of South CarolinaEmail verificata su mailbox.sc.edu
Ramesh KrishnaUniversity of South CarolinaEmail verificata su cec.sc.edu
Joshua KleppingerSavannah River National LaboratoryEmail verificata su srnl.doe.gov
Sandip DasDepartment of Electrical and Computer Engineering, Kennesaw State UniversityEmail verificata su kennesaw.edu
Arnold BurgerProfessor of Physics at Fisk University, Adj. Prof. Physics & EE- Vanderbilt, & Joint Faculty-ORNLEmail verificata su fisk.edu
Oumarou SAVADOGOProfessor of Electrochemistry, Energy storage, Renewable Energy, Materials SciencesEmail verificata su polymtl.ca
Omerfaruk KaradavutOnsemiEmail verificata su onsemi.com
Kelvin J. ZavallaResearch Graduate Assistant, University of South CarolinaEmail verificata su email.sc.edu
Ritwik NagPhD, University of South CarolinaEmail verificata su email.sc.edu
Stephen A. PayneLawrence Livermore National LaboratoryEmail verificata su llnl.gov
Utpal N. RoySavannah River National LaboratoryEmail verificata su srnl.doe.gov
MA MannanProcess Engineer, Portland Technology Development, Intel CorporationEmail verificata su email.sc.edu
Sung Hoon KangJohns Hopkins University, Harvard University, MITEmail verificata su jhu.edu
Zsolt RakDuke Clinical Research InstituteEmail verificata su duke.edu
Subhendra D MahantiProfessor of Physics, Michigan State UniversityEmail verificata su pa.msu.edu
Alket MertiriBoston UniversityEmail verificata su bu.edu
Cihan ÖnerAsst. Prof.,Electrical & Electronics Engineering, Nevşehir Hacı Bektaş Veli UniversityEmail verificata su nevsehir.edu.tr
Mohsin SajjadUniversity of South CarolinaEmail verificata su email.sc.edu
Gerald jellisonSenior Scientist, Oak Ridge National LaboratoryEmail verificata su ornl.gov
Robert R. AlfanoThe City College of New YorkEmail verificata su ccny.cuny.edu

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Krishna Mandal

Altri nomiKrishna C Mandal

Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

Email verificata su cec.sc.edu - Home page

Semiconductor Devices PV Solar Cells Crystal Growth and Characterization Radiation Detectors


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Studies on new chemically deposited photoconducting antimony trisulphide thin films O Savadogo, KC Mandal Solar energy materials and solar cells 26 (1-2), 117-136, 1992	249	1992
Optical properties of Nd 3+-and Tb 3+-doped KPb 2 Br 5 and RbPb 2 Br 5 with low nonradiative decay K Rademaker, WF Krupke, RH Page, SA Payne, K Petermann, G Huber, ... JOSA B 21 (12), 2117-2129, 2004	104	2004
Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2 S 3 Films Chemically Deposited with Silicotungstic Acid O Savadogo, KC Mandal Journal of the Electrochemical Society 141 (10), 2871, 1994	95	1994
Ultrafast Electronic Relaxation Dynamics in PbI₂ Semiconductor Colloidal Nanoparticles: A Femtosecond Transient Absorption Study A Sengupta, B Jiang, KC Mandal, JZ Zhang The Journal of Physical Chemistry B 103 (16), 3128-3137, 1999	92	1999
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis SK Chaudhuri, KJ Zavalla, KC Mandal Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013	83	2013
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach SK Chaudhuri, KJ Zavalla, KC Mandal Applied Physics Letters 102 (3), 2013	77	2013
Characterizations of Antimony Tri‐Sulfide Chemically Deposited with Silicotungstic Acid O Savadogo, KC Mandal Journal of the Electrochemical Society 139 (1), L16, 1992	69	1992
Low Energy X-Ray and-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer KC Mandal, PG Muzykov, SK Chaudhuri, JR Terry IEEE Transactions on Nuclear Science 60 (4), 2888-2893, 2013	65	2013
Characterization of semi-insulating 4H silicon carbide for radiation detectors KC Mandal, RM Krishna, PG Muzykov, S Das, TS Sudarshan IEEE Transactions on Nuclear Science 58 (4), 1992-1999, 2011	57	2011
Characterization of Low-Defectand CdTe Crystals for High-Performance Frisch Collar Detectors KC Mandal, SH Kang, M Choi, A Kargar, MJ Harrison, DS McGregor, ... IEEE Transactions on Nuclear Science 54 (4), 802-806, 2007	57	2007
III–VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors KC Mandal, SH Kang, M Choi, J Chen, XC Zhang, JM Schleicher, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (2), 284-288, 2008	55	2008
Low‐cost technique for preparing n‐Sb₂S₃/p‐Si heterojunction solar cells O Savadogo, KC Mandal Applied physics letters 63 (2), 228-230, 1993	54	1993
In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge KC Mandal, F Ozanam, JN Chazalviel Applied physics letters 57 (26), 2788-2790, 1990	54	1990
Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors: A Comparative Study of Colloidal BiI₃ and PbI₂ Nanoparticles A Sengupta, KC Mandal, JZ Zhang The Journal of Physical Chemistry B 104 (40), 9396-9403, 2000	52	2000
Doping dependence of electronic and mechanical properties of GaSe 1− x Te x and Ga 1− x In x Se from first principles Z Rak, SD Mahanti, KC Mandal, NC Fernelius Physical Review B 82 (15), 155203, 2010	49	2010
Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies MA Mannan, SK Chaudhuri, KV Nguyen, KC Mandal Journal of Applied Physics 115 (22), 2014	48	2014
Defect levels in Cu2ZnSn (SxSe1− x) 4 solar cells probed by current-mode deep level transient spectroscopy S Das, SK Chaudhuri, RN Bhattacharya, KC Mandal Applied Physics Letters 104 (19), 2014	48	2014
Electronic structure of substitutional defects and vacancies in GaSe Z Rak, SD Mahanti, KC Mandal, NC Fernelius Journal of Physics and Chemistry of Solids 70 (2), 344-355, 2009	48	2009
Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices KC Mandal, JW Kleppinger, SK Chaudhuri Micromachines 11 (3), 254, 2020	47	2020
Correlation of deep levels with detector performance in 4H-SiC epitaxial Schottky barrier alpha detectors KC Mandal, SK Chaudhuri, KV Nguyen, MA Mannan IEEE Transactions on Nuclear Science 61 (4), 2338-2344, 2014	47	2014

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