Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 E Scalise, M Houssa, G Pourtois, V Afanas’ev, A Stesmans
Nano Research 5 (1), 43-48, 2012
539 2012 Buckled two-dimensional Xene sheets A Molle, J Goldberger, M Houssa, Y Xu, SC Zhang, D Akinwande
Nature materials 16 (2), 163-169, 2017
411 2017 Trap-assisted tunneling in high permittivity gate dielectric stacks M Houssa, M Tuominen, M Naili, V Afanas’ ev, A Stesmans, S Haukka, ...
Journal of Applied Physics 87 (12), 8615-8620, 2000
407 2000 Electronic properties of hydrogenated silicene and germanene M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’ Ev, A Stesmans
Applied Physics Letters 98 (22), 223107, 2011
379 2011 High k Gate Dielectrics M Houssa
CRC Press, 2003
369 2003 Effective electrical passivation of Ge(100) for high- A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ...
Applied physics letters 91 (8), 082904, 2007
327 2007 Ultimate scaling of CMOS logic devices with Ge and III–V materials M Heyns, W Tsai
Mrs bulletin 34 (7), 485-492, 2009
303 * 2009 Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
290 2008 Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
290 2006 Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface D Chiappe, E Scalise, E Cinquanta, C Grazianetti, B van den Broek, ...
Advanced Materials 26 (13), 2096-2101, 2014
267 2014 Variation in the fixed charge density of M Houssa, VV Afanas’ ev, A Stesmans, MM Heyns
Applied Physics Letters 77 (12), 1885-1887, 2000
247 2000 Can silicon behave like graphene? A first-principles study M Houssa, G Pourtois, VV Afanas’ ev, A Stesmans
Applied Physics Letters 97 (11), 112106, 2010
246 2010 Band alignments in metal–oxide–silicon structures with atomic-layer deposited VV Afanas’ ev, M Houssa, A Stesmans, MM Heyns
Journal of applied physics 91 (5), 3079-3084, 2002
216 2002 Polarity effect on the temperature dependence of leakage current through Z Xu, M Houssa, S De Gendt, M Heyns
Applied physics letters 80 (11), 1975-1977, 2002
196 2002 Electron energy barriers between (100)Si and ultrathin stacks of VV Afanas’ ev, M Houssa, A Stesmans, MM Heyns
Applied Physics Letters 78 (20), 3073-3075, 2001
187 2001 A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ...
Applied Physics Letters 86 (3), 032908, 2005
180 2005 Silicene: a review of recent experimental and theoretical investigations M Houssa, A Dimoulas, A Molle
Journal of Physics: Condensed Matter 27 (25), 253002, 2015
173 2015 Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown M Houssa, T Nigam, PW Mertens, MM Heyns
Journal of Applied Physics 84 (8), 4351-4355, 1998
155 1998 Vibrational properties of silicene and germanene E Scalise
Vibrational Properties of Defective Oxides and 2D Nanolattices, 61-93, 2014
145 2014 Getting through the Nature of Silicene: An sp2 –sp3 Two-Dimensional Silicon Nanosheet E Cinquanta, E Scalise, D Chiappe, C Grazianetti, B van den Broek, ...
The Journal of Physical Chemistry C 117 (32), 16719-16724, 2013
145 2013 