Antonella Parisini
Antonella Parisini
associated professor University of Parma
Email verificata su unipr.it
Titolo
Citata da
Citata da
Anno
Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens
A Parisini, A Bourret, A Armigliato, M Servidori, S Solmi, R Fabbri, ...
Journal of applied physics 67 (5), 2320-2332, 1990
721990
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals
A Parisini, R Fornari
Semiconductor Science and Technology 31 (3), 035023, 2016
632016
Optical absorption near the fundamental absorption edge in GaSb
C Ghezzi, R Magnanini, A Parisini, B Rotelli, L Tarricone, A Bosacchi, ...
Physical Review B 52 (3), 1463, 1995
621995
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ...
Materials Chemistry and Physics 205, 502-507, 2018
602018
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions
G Lulli, A Parisini, G Mattei
Ultramicroscopy 60 (2), 187-194, 1995
521995
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pcz, ...
Acta Materialia 140, 411-416, 2017
492017
Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC
R Nipoti, R Scaburri, A Halln, A Parisini
Journal of Materials Research 28 (1), 17, 2013
472013
Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV
R Ferrini, G Guizzetti, M Patrini, A Parisini, L Tarricone, B Valenti
The European Physical Journal B-Condensed Matter and Complex Systems 27 (4…, 2002
442002
Experimental evidence of delocalization in correlated disorder superlattices
V Bellani, E Diez, A Parisini, L Tarricone, R Hey, GB Parravicini, ...
Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 823-826, 2000
432000
Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation
A Parisini, R Nipoti
Journal of Applied Physics 114 (24), 243703, 2013
422013
Diamond hexagonal silicon phase and {113} defects Energy calculations and new defect models
A Parisini, A Bourret
Philosophical Magazine A 67 (3), 605-625, 1993
391993
Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy
A Bosacchi, S Franchi, P Allegri, V Avanzini, A Baraldi, C Ghezzi, ...
Journal of crystal growth 150, 844-848, 1995
361995
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
M Longo, R Magnanini, A Parisini, L Tarricone, A Carbognani, C Bocchi, ...
Journal of crystal growth 248, 119-123, 2003
342003
A study of the electrical properties controlled by residual acceptors in gallium antimonide
F Meinardi, A Parisini, L Tarricone
Semiconductor science and technology 8 (11), 1985, 1993
331993
Porous silicon layer permeated with Sn–V mixed oxides for hydrocarbon sensor fabrication
R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, G Pizzochero, ...
Thin solid films 297 (1-2), 43-47, 1997
301997
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy
A Baraldi, F Colonna, C Ghezzi, R Magnanini, A Parisini, L Tarricone, ...
Semiconductor science and technology 11 (11), 1656, 1996
291996
The electronic structure of ε-Ga2O3
M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 022522, 2019
282019
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
A Parisini, M Gorni, A Nath, L Belsito, MV Rao, R Nipoti
Journal of Applied Physics 118 (3), 035101, 2015
252015
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization
A Baraldi, C Ghezzi, R Magnanini, A Parisini, L Tarricone, A Bosacchi, ...
Materials Science and Engineering: B 28 (1-3), 174-178, 1994
241994
Determination of the valence band offset of MOVPE-grown multiple quantum wells by admittance spectroscopy
C Ghezzi, R Magnanini, A Parisini, L Tarricone, E Gombia, M Longo
Physical Review B 77 (12), 125317, 2008
232008
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
Articoli 1–20