Antonella Parisini
Antonella Parisini
associated professor University of Parma
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Citata da
Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens
A Parisini, A Bourret, A Armigliato, M Servidori, S Solmi, R Fabbri, ...
Journal of applied physics 67 (5), 2320-2332, 1990
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals
A Parisini, R Fornari
Semiconductor Science and Technology 31 (3), 035023, 2016
Optical absorption near the fundamental absorption edge in GaSb
C Ghezzi, R Magnanini, A Parisini, B Rotelli, L Tarricone, A Bosacchi, ...
Physical Review B 52 (3), 1463, 1995
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ...
Materials Chemistry and Physics 205, 502-507, 2018
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions
G Lulli, A Parisini, G Mattei
Ultramicroscopy 60 (2), 187-194, 1995
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pcz, ...
Acta Materialia 140, 411-416, 2017
Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC
R Nipoti, R Scaburri, A Halln, A Parisini
Journal of Materials Research 28 (1), 17, 2013
Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV
R Ferrini, G Guizzetti, M Patrini, A Parisini, L Tarricone, B Valenti
The European Physical Journal B-Condensed Matter and Complex Systems 27 (4…, 2002
Experimental evidence of delocalization in correlated disorder superlattices
V Bellani, E Diez, A Parisini, L Tarricone, R Hey, GB Parravicini, ...
Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 823-826, 2000
Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation
A Parisini, R Nipoti
Journal of Applied Physics 114 (24), 243703, 2013
Diamond hexagonal silicon phase and {113} defects Energy calculations and new defect models
A Parisini, A Bourret
Philosophical Magazine A 67 (3), 605-625, 1993
Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy
A Bosacchi, S Franchi, P Allegri, V Avanzini, A Baraldi, C Ghezzi, ...
Journal of crystal growth 150, 844-848, 1995
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
M Longo, R Magnanini, A Parisini, L Tarricone, A Carbognani, C Bocchi, ...
Journal of crystal growth 248, 119-123, 2003
A study of the electrical properties controlled by residual acceptors in gallium antimonide
F Meinardi, A Parisini, L Tarricone
Semiconductor science and technology 8 (11), 1985, 1993
Porous silicon layer permeated with Sn–V mixed oxides for hydrocarbon sensor fabrication
R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, G Pizzochero, ...
Thin solid films 297 (1-2), 43-47, 1997
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy
A Baraldi, F Colonna, C Ghezzi, R Magnanini, A Parisini, L Tarricone, ...
Semiconductor science and technology 11 (11), 1656, 1996
The electronic structure of ε-Ga2O3
M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 022522, 2019
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
A Parisini, M Gorni, A Nath, L Belsito, MV Rao, R Nipoti
Journal of Applied Physics 118 (3), 035101, 2015
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization
A Baraldi, C Ghezzi, R Magnanini, A Parisini, L Tarricone, A Bosacchi, ...
Materials Science and Engineering: B 28 (1-3), 174-178, 1994
Determination of the valence band offset of MOVPE-grown multiple quantum wells by admittance spectroscopy
C Ghezzi, R Magnanini, A Parisini, L Tarricone, E Gombia, M Longo
Physical Review B 77 (12), 125317, 2008
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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