High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication (Conference Presentation) A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ...
CLEO: Science and Innovations, STh1C. 7, 2017
48 * 2017 High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication DF Arman Rashidi, Morteza Monavarian, Andrew Aragon, Serdal Okur, Mohsen ...
IEEE Photonics Technology Letters 29 (4), 2017
48 2017 Tunable microwave signal generator with an optically-injected 1310nm QD-DFB laser A Hurtado, J Mee, M Nami, ID Henning, MJ Adams, LF Lester
Optics express 21 (9), 10772-10778, 2013
43 2013 Carrier dynamics and electro-optical characterization of high-performance GaN/InGaN core-shell nanowire light-emitting diodes M Nami, IE Stricklin, KM DaVico, S Mishkat-Ul-Masabih, ...
Scientific reports 8 (1), 1-11, 2018
42 2018 Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ...
Journal of Applied Physics 122 (3), 035706, 2017
33 2017 Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire AK Rishinaramangalam, M Nami, MN Fairchild, DM Shima, ...
Applied Physics Express 9 (3), 032101, 2016
26 2016 Nanoporous distributed Bragg reflectors on free-standing nonpolar m -plane GaN S Mishkat-Ul-Masabih, TS Luk, A Rishinaramangalam, M Monavarian, ...
Applied Physics Letters 112 (4), 041109, 2018
25 2018 Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires M Nami, DF Feezell
Optics express 22 (24), 29445-29455, 2014
25 2014 Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate M Behzadirad, M Nami, N Wostbrock, MR Zamani Kouhpanji, DF Feezell, ...
ACS nano 12 (3), 2373-2380, 2018
24 2018 Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ...
Optics express 25 (16), 19343-19353, 2017
24 2017 Explanation of low efficiency droop in semipolar (20-2-1) InGaN/GaN LEDs through evaluation of carrier recombination coefficients (arXiv) DFF Morteza Monavarian, Arman Rashidi, Andrew A. Aragon, Sang H. Oh, Mohsen ...
arXiv:1706.03135, 2017
24 * 2017 Internal quantum efficiency and carrier dynamics in semipolar (20 21) InGaN/GaN light-emitting diodes S Okur, M Nami, AK Rishinaramangalam, SH Oh, SP DenBaars, S Liu, ...
Optics express 25 (3), 2178-2186, 2017
23 2017 Internal quantum efficiency and carrier dynamics in semipolar (20 21) InGaN/GaN light-emitting diodes S Okur, M Nami, AK Rishinaramangalam, SH Oh, SP DenBaars, S Liu, ...
Optics express 25 (3), 2178-2186, 2017
23 2017 Optical properties of Ag-coated GaN/InGaN axial and core–shell nanowire light-emitting diodes M Nami, D Feezell
Journal of Optics 17 (2), 025004, 2015
21 2015 Bistability patterns and nonlinear switching with very high contrast ratio in a 1550 nm quantum dash semiconductor laser A Hurtado, M Nami, ID Henning, MJ Adams, LF Lester
Applied Physics Letters 101 (16), 161117, 2012
20 2012 Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ...
ACS Photonics 6 (7), 1618-1625, 2019
19 2019 Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy M Nami, RF Eller, S Okur, AK Rishinaramangalam, S Liu, I Brener, ...
Nanotechnology 28 (2), 025202, 2016
19 2016 GaN nanowire tips for nanoscale atomic force microscopy M Behzadirad, M Nami, AK Rishinaramagalam, DF Feezell, T Busani
Nanotechnology 28 (20), 20LT01, 2017
17 2017 Trade-off between bandwidth and efficiency in semipolar M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ...
Applied Physics Letters 112 (19), 191102, 2018
15 2018 Two-wavelength switching with a 1310-nm quantum dot distributed feedback laser A Hurtado, M Nami, ID Henning, MJ Adams, LF Lester
IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1900708-1900708, 2013
11 2013 
Daniel FeezellUniversity of New MexicoEmail verificata su unm.edu
