| On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors JK Kaushik, VR Balakrishnan, BS Panwar, R Muralidharan IEEE Transaction on Electron Devices 60 (10), 3351, 2013 | 42 | 2013 |
| Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT JK Kaushik, VR Balakrishnan, BS Panwar, R Muralidharan Semiconductor Science and Technology DOI 10.1088/0268-1242/28/1/015026 28 (1 …, 2013 | 33 | 2013 |
| Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors JK Kaushik, VR Balakrishnan, D Mongia, U Kumar, S Dayal, BS Panwar, ... Thin Solid Films, 2016 | 25 | 2016 |
| Electrical and structural characteristics of sputtered c-oriented AlN thin films on Si (100) and Si (110) substrates A Pandey, J Kaushik, S Dutta, AK Kapoor, D Kaur Thin Solid Films 666, 143-149, 2018 | 20 | 2018 |
| Growth, structural and electrical properties of AlN/Si (111) for futuristic MEMS applications A Pandey, S Dutta, J Kaushik, N Gupta, G Gupta, R Raman, D Kaur Materials Science in Semiconductor Processing 123, 105567, 2021 | 12 | 2021 |
| Higher electrical activation of ion-implanted Si over S in GaSb epitaxial layers RK Pandey, P Mishra, JK Kaushik, A Pandey, R Raman, KD Devi, S Rath Materials Science in Semiconductor Processing 115, 105107, 2020 | 6 | 2020 |
| RF Sputtered MoO3 Thin Film on Si (100) for Gas Sensing Applications. A Pandey, A Dhaka, C Kumari, J Kaushik, A Arora, S Dutta, A Dixit, ... Defence Science Journal 70 (5), 2020 | 5 | 2020 |
| Analysis of fast and slow trap states on electrical performance of AlGaN/GaN HEMTs JK Kaushik, VR Balakrishnan, BS Panwar, R Muralidharan 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-3, 2014 | 4 | 2014 |
| Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field S Gupta, JK Kaushik, A Gupta, V Kumar, VR Balakrishnan Semiconductor Science and Technology 35 (8), 085035, 2020 | 3 | 2020 |
| Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K) H Sheoran, JK Kaushik, R Singh Materials Science in Semiconductor Processing 165, 107606, 2023 | 2 | 2023 |
| An investigation of dielectric properties of ultrathin TiOx-SiOx nanocomposite layers on Si substrate S Sharma, S Dutta, N Gupta, J Kaushik, A Pandey, MK Khanna Journal of Materials Science: Materials in Electronics 34 (6), 490, 2023 | 2 | 2023 |
| On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs S Gupta, JK Kaushik, A Gupta IEEE Transactions on Electron Devices 69 (7), 3623-3629, 2022 | 2 | 2022 |
| Admittance spectroscopy and capacitance dispersion of AlGaN/GaN hetero-structures JK Kaushik, VR Balakrishnan, BS Panwar, R Muralidharan 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 2 | 2014 |
| Two dimensional analytical modelling of DC IV collapse of drain current in AlGaN/GaN HEMTs S Gupta, JK Kaushik, A Gupta, VR Balakrishnan 2019 IEEE International Conference on Electrical, Computer and Communication …, 2019 | 1 | 2019 |
| Design & Modeling of Power Combiner/Divider for MMIC/MIC Applications JK Kaushik, RK Khatri, HP Vyas National Conference on Recent Advancements in Microwave Technique and …, 2006 | 1 | 2006 |
| AlGaN/GaN circular high electron mobility transistors M Agrawal, A Jain, J Kaushik, BR Mehta, R Muralidharan International Conference on Thin Films and Nanotechnology: Knowledge …, 2021 | | 2021 |
| On-state Leakage Current Modeling in AlGaN/GaN HEMT S Gupta, JK Kaushik, A Gupta 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020 | | 2020 |
| "AlGaN/GaN circular high electron mobility transistors on Si(111) substrates for sensing applications M Agrawal, J Kaushik, BR Mehta, R Muralidharan 9th International Conference on Materials for Advanced Technologies (ICMAT …, 2017 | | 2017 |
| Anomalous Shift in Pinch - Off Voltage of AlGaN/GaN HEMTs JK Kaushik, DS Rawal, U Kumar, S Vinayak, VR Balakrishnan Crystal 22 (1), 1-3, 2017 | | 2017 |
| The Effect of Disordered Interface on the Electrical Properties of Si3N4 passivated AlGaN/GaN HEMT's JK Kaushik, VR Balakrishnan, BS Panwar, R Muralidharan 9th National conference on Solid State Chemistry and Allied Areas (ISCAS …, 2015 | | 2015 |
