High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
220 2019 Spin-strain interaction in nitrogen-vacancy centers in diamond P Udvarhelyi, VO Shkolnikov, A Gali, G Burkard, A Pályi
Physical Review B 98 (7), 075201, 2018
114 2018 Electrically driven optical interferometry with spins in silicon carbide KC Miao, A Bourassa, CP Anderson, SJ Whiteley, AL Crook, SL Bayliss, ...
Science Advances 5 (11), eaay0527, 2019
73 2019 Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide N Morioka, C Babin, R Nagy, I Gediz, E Hesselmeier, D Liu, M Joliffe, ...
Nature communications 11 (1), 2516, 2020
72 2020 Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in - P Udvarhelyi, G Thiering, N Morioka, C Babin, F Kaiser, D Lukin, ...
Physical Review Applied 13 (5), 054017, 2020
63 2020 Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface P Udvarhelyi, R Nagy, F Kaiser, SY Lee, J Wrachtrup, A Gali
Physical Review Applied 11 (4), 044022, 2019
59 2019 Detection of single W-centers in silicon Y Baron, A Durand, P Udvarhelyi, T Herzig, M Khoury, S Pezzagna, ...
ACS photonics 9 (7), 2337-2345, 2022
53 2022 Identification of a telecom wavelength single photon emitter in silicon P Udvarhelyi, B Somogyi, G Thiering, A Gali
Physical review letters 127 (19), 196402, 2021
43 2021 Giant shift upon strain on the fluorescence spectrum of VN NB color centers in h -BN S Li, JP Chou, A Hu, MB Plenio, P Udvarhelyi, G Thiering, M Abdi, A Gali
npj Quantum Information 6 (1), 85, 2020
36 2020 Ab Initio Spin-Strain Coupling Parameters of Divacancy Qubits in Silicon CarbideP Udvarhelyi, A Gali
Physical Review Applied 10 (5), 054010, 2018
34 2018 Carbon defect qubit in two-dimensional WS2 S Li, G Thiering, P Udvarhelyi, V Ivády, A Gali
Nature communications 13 (1), 1210, 2022
25 2022 Ultraviolet quantum emitters in hexagonal boron nitride from carbon clusters S Li, A Pershin, G Thiering, P Udvarhelyi, A Gali
The Journal of Physical Chemistry Letters 13 (14), 3150-3157, 2022
18 2022 Ab initio theory of the defect in diamond for quantum memory implementationP Udvarhelyi, G Thiering, E Londero, A Gali
Physical Review B 96 (15), 155211, 2017
12 2017 Controlled Surface Modification to Revive Shallow NV– Centers JN Neethirajan, T Hache, D Paone, D Pinto, A Denisenko, R Stöhr, ...
Nano Letters 23 (7), 2563-2569, 2023
10 2023 Optically active spin defects in few-layer thick hexagonal boron nitride A Durand, T Clua-Provost, F Fabre, P Kumar, J Li, JH Edgar, P Udvarhelyi, ...
Physical Review Letters 131 (11), 116902, 2023
9 2023 An L-band emitter with quantum memory in silicon P Udvarhelyi, A Pershin, P Deák, A Gali
npj Computational Materials 8 (1), 262, 2022
8 2022 The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium P Deák, P Udvarhelyi, G Thiering, A Gali
Nature Communications 14 (1), 361, 2023
6 2023 A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields P Udvarhelyi, T Clua-Provost, A Durand, J Li, JH Edgar, B Gil, ...
npj Computational Materials 9 (1), 150, 2023
5 2023 Ab Initio Study of (100) Diamond Surface SpinsJP Chou, P Udvarhelyi, NP De Leon, A Gali
Physical Review Applied 20 (1), 014040, 2023
2 2023 Strain engineering for transition-metal defects in SiC B Tissot, P Udvarhelyi, A Gali, G Burkard
Physical Review B 109 (5), 054111, 2024
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