In situ atomic-scale imaging of electrochemical lithiation in silicon XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ... Nature nanotechnology 7 (11), 749-756, 2012 | 481 | 2012 |
Spontaneously grown GaN and AlGaN nanowires KA Bertness, A Roshko, NA Sanford, JM Barker, AV Davydov Journal of Crystal Growth 287 (2), 522-527, 2006 | 177 | 2006 |
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon NV Nguyen, AV Davydov, D Chandler-Horowitz, MM Frank Applied Physics Letters 87, 192903, 2005 | 162 | 2005 |
Catalyst-free growth of GaN nanowires KA Bertness, NA Sanford, JM Barker, JB Schlager, A Roshko, ... Journal of electronic materials 35 (4), 576-580, 2006 | 139 | 2006 |
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ... Acs Nano 10 (3), 3580-3588, 2016 | 137 | 2016 |
The 2019 materials by design roadmap K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ... Journal of Physics D: Applied Physics 52 (1), 013001, 2018 | 130 | 2018 |
GaN nanowires grown by molecular beam epitaxy KA Bertness, NA Sanford, AV Davydov Selected Topics in Quantum Electronics, IEEE Journal of, 1-12, 2011 | 130 | 2011 |
Electrolyte stability determines scaling limits for solid-state 3D Li ion batteries D Ruzmetov, VP Oleshko, PM Haney, HJ Lezec, K Karki, KH Baloch, ... Nano letters 12 (1), 505-511, 2012 | 117 | 2012 |
Diameter dependent transport properties of gallium nitride nanowire field effect transistors A Motayed, M Vaudin, AV Davydov, J Melngailis, M He, SN Mohammad Applied physics letters 90 (4), 043104, 2007 | 116 | 2007 |
Thermodynamics and phase stability in the Ga–N system J Unland, B Onderka, A Davydov, R Schmid-Fetzer Journal of Crystal Growth 256 (1-2), 33-51, 2003 | 111 | 2003 |
Refractive index study of AlxGa1-xN films grown on sapphire substrates NA Sanford, LH Robins, AV Davydov, A Shapiro, DV Tsvetkov, ... Journal of applied physics 94 (5), 2980-2991, 2003 | 109 | 2003 |
Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition A Motayed, AV Davydov, MD Vaudin, I Levin, J Melngailis, ... Journal of applied physics 100, 024306, 2006 | 108 | 2006 |
Tapering control of Si nanowires grown from SiCl4 at reduced pressure S Krylyuk, AV Davydov, I Levin ACS nano, 2011 | 105 | 2011 |
Immobilization of streptavidin on 4H–SiC for biosensor development EH Williams, AV Davydov, A Motayed, SG Sundaresan, P Bocchini, ... Applied surface science 258 (16), 6056-6063, 2012 | 99 | 2012 |
Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation RA Bernal, R Agrawal, B Peng, KA Bertness, NA Sanford, AV Davydov, ... Nano letters, 2011 | 93 | 2011 |
Electric-field induced structural transition in vertical MoTe 2-and Mo 1–x W x Te 2-based resistive memories F Zhang, H Zhang, S Krylyuk, CA Milligan, Y Zhu, DY Zemlyanov, ... Nature materials 18 (1), 55-61, 2019 | 90 | 2019 |
Ultimate bending strength of Si nanowires G Stan, S Krylyuk, AV Davydov, I Levin, RF Cook Nano letters 12 (5), 2599-2604, 2012 | 88 | 2012 |
Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy MD Brubaker, I Levin, AV Davydov, DM Rourke, NA Sanford, VM Bright, ... Journal of Applied Physics 110 (5), 053506, 2011 | 85 | 2011 |
Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants GS Aluri, A Motayed, AV Davydov, VP Oleshko, KA Bertness, NA Sanford, ... Nanotechnology 22, 295503, 2011 | 77 | 2011 |
Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates I Levin, A Davydov, B Nikoobakht, N Sanford, P Mogilevsky Applied Physics Letters 87 (10), 103110, 2005 | 77 | 2005 |