Teimuraz Mchedlidze (Mtchedlidze)
Teimuraz Mchedlidze (Mtchedlidze)
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Residual stress in Si nanocrystals embedded in a SiO2 matrix
T Arguirov, T Mchedlidze, M Kittler, R Rölver, B Berghoff, M Först, ...
Applied Physics Letters 89 (5), 2006
Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics
M Kittler, X Yu, T Mchedlidze, T Arguirov, OF Vyvenko, W Seifert, ...
Small 3 (6), 964-973, 2007
The Direct Observation of Grown‐in Laser Scattering Tomography Defects in Czochralski Silicon
M Nishimura, S Yoshino, H Motoura, S Shimura, T Mchedlidze, T Hikone
Journal of the Electrochemical Society 143 (10), L243, 1996
Influence of dislocation loops on the near-infrared light emission from silicon diodes
T Hoang, J Holleman, P LeMinh, J Schmitz, T Mchedlidze, T Arguirov, ...
IEEE transactions on electron devices 54 (8), 1860-1866, 2007
Temperature dependence of conduction by reconstructured dislocations in silicon and nonlinear effects
VV Kveder, AE Koshelev, T Mchedlidze, AIS Yu. A. Osip’yan
Zh. Éksp. Teor. Fiz 83 (2), 699, 1989
Direct detection of carrier traps in Si solar cells after light‐induced degradation
T Mchedlidze, J Weber
physica status solidi (RRL)–Rapid Research Letters 9 (2), 108-110, 2015
Electrical activity of defects induced by oxygen precipitation in Czochralski-grown silicon wafers
T Mchedlidze, K Matsumoto, E Asano
Japanese journal of applied physics 38 (6R), 3426, 1999
Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells
T Arguirov, T Mchedlidze, VD Akhmetov, S Kouteva-Arguirova, M Kittler, ...
Applied Surface Science 254 (4), 1083-1086, 2007
Capability of photoluminescence for characterization of multi-crystalline silicon
T Mchedlidze, W Seifert, M Kittler, AT Blumenau, B Birkmann, T Mono, ...
Journal of Applied Physics 111 (7), 2012
Light-induced solid-to-solid phase transformation in Si nanolayers of Si− SiO 2 multiple quantum wells
T Mchedlidze, T Arguirov, S Kouteva-Arguirova, M Kittler, R Rölver, ...
Physical Review B 77 (16), 161304, 2008
Rapid dislocation‐related D1‐photoluminescence imaging of multicrystalline Si wafers at room temperature
RP Schmid, D Mankovics, T Arguirov, M Ratzke, T Mchedlidze, M Kittler
physica status solidi (a) 208 (4), 888-892, 2011
EPR Study of Hydrogen‐Related Radiation‐Induced Shallow Donors in Silicon
VP Markevich, VP Markevich, T McHedlidze, M Suezawa, LI Murin
physica status solidi (b) 210 (2), 545-549, 1998
Electric‐Dipole Spin Resonance of Dislocations in Plastically Deformed p‐Type Silicon
M Wattenbach, C Kisielowski‐Kemmerich, H Alexander, VV Kveder, ...
physica status solidi (b) 158 (1), K49-K53, 1990
Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect
T Mchedlidze, T Arguirov, M Kittler, T Hoang, J Holleman, J Schmitz
Applied physics letters 91 (20), 2007
Subsurface damage in single diamond tool machined Si wafers
T Mchedlidze, I Yonenaga, K Sumino
Materials Science Forum 196, 1841-1846, 1995
Defect states in Si containing dislocation nets
SA Shevchenko, YA Ossipyan, TR Mchedlidze, EA Steinman, RA Batto
physica status solidi (a) 146 (2), 745-755, 1994
Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects
VV Kveder, AE Koshelev, TR Mchelidze, YA Osipyan, AI Shalynin
Soviet Physics-JETP 68 (1), 104-108, 1989
Characterization of deep levels introduced by RTA and by subsequent anneals in n-type silicon
D Kot, T Mchedlidze, G Kissinger, W Von Ammon
ECS Transactions 50 (5), 269, 2013
High-resolution photoinduced transient spectroscopy of electrically active iron-related defects in electron irradiated high-resistivity silicon
P Kaminski, R Kozlowski, A Jelenski, T Mchedlidze, M Suezawa
Japanese journal of applied physics 42 (9R), 5415, 2003
Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks
T Mchedlidze, O Kononchuk, T Arguirov, M Trushin, M Reiche, M Kittler
Solid State Phenomena 156, 567-572, 2010
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