Single-nanowire solar cells beyond the Shockley–Queisser limit P Krogstrup, HI Jørgensen, M Heiss, O Demichel, JV Holm, M Aagesen, ...
Nature Photonics 7 (4), 306-310, 2013
713 2013 Self-assembled quantum dots in a nanowire system for quantum photonics M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’regan, ...
Nature materials 12 (5), 439-444, 2013
341 2013 Gallium arsenide C Colombo, M Heiβ, M Grätzel, A Fontcuberta i Morral
Applied Physics Letters 94 (17), 173108, 2009
334 2009 Impact of surfaces on the optical properties of GaAs nanowires O Demichel, M Heiss, J Bleuse, H Mariette, A Fontcuberta i Morral
Applied Physics Letters 97 (20), 201907, 2010
244 2010 Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B 83 (4), 045303, 2011
224 2011 Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis M De La Mata, C Magen, J Gazquez, MIB Utama, M Heiss, S Lopatin, ...
Nano letters 12 (5), 2579-2586, 2012
161 2012 Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis M De La Mata, C Magen, J Gazquez, MIB Utama, M Heiss, S Lopatin, ...
Nano letters 12 (5), 2579-2586, 2012
161 2012 Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates E Uccelli, J Arbiol, C Magen, P Krogstrup, E Russo-Averchi, M Heiss, ...
Nano letters 11 (9), 3827-3832, 2011
153 2011 Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy B Ketterer, M Heiss, E Uccelli, J Arbiol, A Fontcuberta i Morral
ACS nano 5 (9), 7585-7592, 2011
129 2011 III–V nanowire arrays: growth and light interaction M Heiss, E Russo-Averchi, A Dalmau-Mallorquí, G Tütüncüoğlu, ...
Nanotechnology 25 (1), 014015, 2013
99 2013 Quantum dot opto-mechanics in a fully self-assembled nanowire M Montinaro, G Wüst, M Munsch, Y Fontana, E Russo-Averchi, M Heiss, ...
Nano letters 14 (8), 4454-4460, 2014
92 2014 Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon E Russo-Averchi, M Heiss, L Michelet, P Krogstrup, J Nygard, C Magen, ...
Nanoscale 4 (5), 1486-1490, 2012
84 2012 Doping incorporation paths in catalyst-free Be-doped GaAs nanowires A Casadei, P Krogstrup, M Heiss, JA Röhr, C Colombo, T Ruelle, ...
Applied Physics Letters 102 (1), 013117, 2013
76 2013 Photonic–plasmonic coupling of GaAs single nanowires to optical nanoantennas A Casadei, EF Pecora, J Trevino, C Forestiere, D Rüffer, ...
Nano Letters 14 (5), 2271-2278, 2014
70 2014 Catalyst-free nanowires with axial InxGa1− xAs/GaAs heterostructures M Heiß, A Gustafsson, S Conesa-Boj, F Peiró, JR Morante, G Abstreiter, ...
Nanotechnology 20 (7), 075603, 2009
67 2009 Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires AM Graham, P Corfdir, M Heiss, S Conesa-Boj, E Uccelli, AF i Morral, ...
Physical Review B 87 (12), 125304, 2013
64 2013 Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance D Rüffer, R Huber, P Berberich, S Albert, E Russo-Averchi, M Heiss, ...
Nanoscale 4 (16), 4989-4995, 2012
64 2012 Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy B Ketterer, M Heiss, MJ Livrozet, A Rudolph, E Reiger, AF i Morral
Physical Review B 83 (12), 125307, 2011
63 2011 Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy B Ketterer, M Heiss, MJ Livrozet, A Rudolph, E Reiger, AF i Morral
Physical Review B 83 (12), 125307, 2011
63 2011 Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy M Heiß, E Riedlberger, D Spirkoska, M Bichler, G Abstreiter, AF i Morral
Journal of Crystal Growth 310 (6), 1049-1056, 2008
58 2008 