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Markku Sopanen
Markku Sopanen
Associate professor, Optoelectronics, Aalto University
Email verificata su aalto.fi
Titolo
Citata da
Citata da
Anno
Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs
M Sopanen, HP Xin, CW Tu
Applied Physics Letters 76 (8), 994-996, 2000
2242000
A single-pixel wireless contact lens display
AR Lingley, M Ali, Y Liao, R Mirjalili, M Klonner, M Sopanen, S Suihkonen, ...
Journal of Micromechanics and Microengineering 21 (12), 125014, 2011
2072011
Luminescence from excited states in strain-induced As quantum dots
H Lipsanen, M Sopanen, J Ahopelto
Physical Review B 51 (19), 13868, 1995
1931995
Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects
S Grosse, JHH Sandmann, G Von Plessen, J Feldmann, H Lipsanen, ...
Physical Review B 55 (7), 4473, 1997
1581997
Zeeman effect in parabolic quantum dots
R Rinaldi, PV Giugno, R Cingolani, H Lipsanen, M Sopanen, J Tulkki, ...
Physical review letters 77 (2), 342, 1996
1451996
Strain‐induced quantum dots by self‐organized stressors
M Sopanen, H Lipsanen, J Ahopelto
Applied physics letters 66 (18), 2364-2366, 1995
1261995
High quality GaAs nanowires grown on glass substrates
V Dhaka, T Haggren, H Jussila, H Jiang, E Kauppinen, T Huhtio, ...
Nano letters 12 (4), 1912-1918, 2012
1142012
Self‐organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy
M Sopanen, H Lipsanen, J Ahopelto
Applied physics letters 67 (25), 3768-3770, 1995
1121995
Observation of defect complexes containing Ga vacancies in GaAsN
J Toivonen, T Hakkarainen, M Sopanen, H Lipsanen, J Oila, K Saarinen
Applied Physics Letters 82 (1), 40-42, 2003
1032003
Temperature dependence of carrier relaxation in strain-induced quantum dots
M Brasken, M Lindberg, M Sopanen, H Lipsanen, J Tulkki
Physical Review B 58 (24), R15993, 1998
961998
Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation
E Repo, S Rengaraj, S Pulkka, E Castangnoli, S Suihkonen, M Sopanen, ...
Separation and Purification Technology 120, 206-214, 2013
902013
High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy
J Toivonen, T Hakkarainen, M Sopanen, H Lipsanen
Journal of crystal growth 221 (1-4), 456-460, 2000
772000
Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires
J Tulkki, H Lipsanen, M Sopanen
Artec House, 2004
712004
Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy
M Taskinen, M Sopanen, H Lipsanen, J Tulkki, T Tuomi, J Ahopelto
Surface science 376 (1-3), 60-68, 1997
701997
Low energy electron beam induced vacancy activation in GaN
H Nykänen, S Suihkonen, L Kilanski, M Sopanen, F Tuomisto
Applied Physics Letters 100 (12), 2012
652012
GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
M Bosund, P Mattila, A Aierken, T Hakkarainen, H Koskenvaara, ...
Applied Surface Science 256 (24), 7434-7437, 2010
612010
Luminescence from excited states in straininduced In, Ga
H Lipsanen, M Sopanen, J Ahopelto
As quantum dots. Phys. Rev. B 51 (13), 868, 1995
581995
Selective growth of InGaAs on nanoscale InP islands
J Ahopelto, H Lipsanen, M Sopanen, T Koljonen, HEM Niemi
Applied physics letters 65 (13), 1662-1664, 1994
571994
Atomic layer etching of gallium nitride (0001)
C Kauppinen, SA Khan, J Sundqvist, DB Suyatin, S Suihkonen, ...
Journal of Vacuum Science & Technology A 35 (6), 2017
532017
Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ...
Journal of crystal growth 300 (2), 324-329, 2007
482007
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