laurent chaput
laurent chaput
Verified email at univ-lorraine.fr
Title
Cited by
Cited by
Year
Distributions of phonon lifetimes in Brillouin zones
A Togo, L Chaput, I Tanaka
Physical Review B 91 (9), 094306, 2015
4682015
First-principles phonon calculations of thermal expansion in , , and
A Togo, L Chaput, I Tanaka, G Hug
Physical Review B 81 (17), 174301, 2010
2862010
Prediction of low-thermal-conductivity compounds with first-principles anharmonic lattice-dynamics calculations and bayesian optimization
A Seko, A Togo, H Hayashi, K Tsuda, L Chaput, I Tanaka
Physical review letters 115 (20), 205901, 2015
2392015
Phonon-phonon interactions in transition metals
L Chaput, A Togo, I Tanaka, G Hug
Physical Review B 84 (9), 094302, 2011
1972011
Exact exchange for correlated electrons
P Novák, J Kuneš, L Chaput, WE Pickett
physica status solidi (b) 243 (3), 563-572, 2006
1922006
Transport in doped skutterudites: Ab initio electronic structure calculations
L Chaput, P Pécheur, J Tobola, H Scherrer
Physical Review B 72 (8), 085126, 2005
1772005
Giant spin-dependent thermoelectric effect in magnetic tunnel junctions
W Lin, M Hehn, L Chaput, B Negulescu, S Andrieu, F Montaigne, ...
Nature communications 3, 744, 2012
1022012
Direct solution to the linearized phonon Boltzmann equation
L Chaput
Physical review letters 110 (26), 265506, 2013
922013
First‐order Raman scattering of the MAX phases: Ti2AlN, Ti2AlC0.5N0.5, Ti2AlC, (Ti0.5V0.5)2AlC, V2AlC, Ti3AlC2, and Ti3GeC2
V Presser, M Naguib, L Chaput, A Togo, G Hug, MW Barsoum
Journal of Raman Spectroscopy 43 (1), 168-172, 2012
822012
STUDY OF ELECTRON, PHONON AND CRYSTAL STABILITY VERSUS THERMOELECTRIC PROPERTIES IN Mg2X(X = Si, Sn) COMPOUNDS AND THEIR …
J Bourgeois, J Tobola, B Wiendlocha, L Chaput, P Zwolenski, ...
Functional Materials Letters 6 (05), 1340005, 2013
592013
Electronic structure and thermopower of and related half-Heusler phases
L Chaput, J Tobola, P Pécheur, H Scherrer
Physical Review B 73 (4), 045121, 2006
562006
Thermopower of the 312 MAX phases , , and
L Chaput, G Hug, P Pécheur, H Scherrer
Physical Review B 75 (3), 035107, 2007
452007
Anisotropy and thermopower in
L Chaput, G Hug, P Pécheur, H Scherrer
Physical Review B 71 (12), 121104, 2005
452005
Electronic properties of the -doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K
A Bellec, D Riedel, G Dujardin, O Boudrioua, L Chaput, L Stauffer, ...
Physical Review B 80 (24), 245434, 2009
432009
Nonlocal Activation of a Bistable Atom through a Surface State Charge-Transfer Process on
A Bellec, D Riedel, G Dujardin, O Boudrioua, L Chaput, L Stauffer, ...
Physical review letters 105 (4), 048302, 2010
412010
Neutron diffraction measurements and first-principles study of thermal motion of atoms in select and binary transition-metal carbide phases
NJ Lane, SC Vogel, G Hug, A Togo, L Chaput, L Hultman, MW Barsoum
Physical Review B 86 (21), 214301, 2012
332012
Reversible charge storage in a single silicon atom
A Bellec, L Chaput, G Dujardin, D Riedel, L Stauffer, P Sonnet
Physical Review B 88 (24), 241406, 2013
322013
Modeling the reduction of thermal conductivity in core/shell and diameter-modulated silicon nanowires
E Blandre, L Chaput, S Merabia, D Lacroix, K Termentzidis
Physical Review B 91 (11), 115404, 2015
282015
Ab initio phonon properties of half-Heusler NiTiSn, NiZrSn and NiHfSn
L Andrea, G Hug, L Chaput
Journal of Physics: Condensed Matter 27 (42), 425401, 2015
202015
STM and DFT Investigations of Isolated Porphyrin on a Silicon‐Based Semiconductor at Room Temperature
M El Garah, Y Makoudi, F Palmino, E Duverger, P Sonnet, L Chaput, ...
ChemPhysChem 10 (18), 3190-3193, 2009
172009
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Articles 1–20