Patrick Fiorenza
Patrick Fiorenza
Consiglio Nazionale delle Ricerche - Insituto per la Microelettronica e Microsistemi, Catania Italia
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Recent advances on dielectrics technology for SiC and GaN power devices
F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ...
Applied Surface Science 301, 9-18, 2014
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ...
Microelectronic Engineering 187, 66-77, 2018
Non-stoichiometry in “CaCu 3 Ti 4 O 12”(CCTO) ceramics
R Schmidt, S Pandey, P Fiorenza, DC Sinclair
RSC Advances 3 (34), 14580-14589, 2013
Challenges for energy efficient wide band gap semiconductor power devices
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ...
physica status solidi (a) 211 (9), 2063-2071, 2014
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte
Applied Physics Letters 103 (15), 153508, 2013
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte
Applied physics letters 99 (7), 072117, 2011
Conductive atomic force microscopy studies of thin layer degradation
P Fiorenza, W Polspoel, W Vandervorst
Applied physics letters 88 (22), 222104, 2006
Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3
LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte
Applied Physics Letters 101 (19), 193501, 2012
Localized electrical characterization of the giant permittivity effect in ceramics
P Fiorenza, R Lo Nigro, C Bongiorno, V Raineri, MC Ferarrelli, ...
Applied Physics Letters 92 (18), 182907, 2008
Critical issues for interfaces to p-type SiC and GaN in power devices
F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, RL Nigro, ...
Applied surface science 258 (21), 8324-8333, 2012
Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors
P Fiorenza, A Frazzetto, A Guarnera, M Saggio, F Roccaforte
Applied Physics Letters 105 (14), 142108, 2014
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3
P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, ...
Applied Physics A 115 (1), 333-339, 2014
Breakdown kinetics of films by conductive-atomic force microscopy
P Fiorenza, R Lo Nigro, V Raineri, S Lombardo, RG Toro, G Malandrino, ...
Applied Physics Letters 87 (23), 231913, 2005
Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates
G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ...
Beilstein journal of nanotechnology 4 (1), 234-242, 2013
An overview of normally-off GaN-based high electron mobility transistors
F Roccaforte, G Greco, P Fiorenza, F Iucolano
Materials 12 (10), 1599, 2019
Reliability of thermally oxidized by conductive atomic force microscopy
P Fiorenza, V Raineri
Applied physics letters 88 (21), 212112, 2006
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
F Roccaforte, G Greco, P Fiorenza, V Raineri, G Malandrino, R Lo Nigro
Applied Physics Letters 100 (6), 063511, 2012
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via
Journal of crystal growth 310 (5), 971-975, 2008
Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures
P Fiorenza, G Greco, F Iucolano, A Patti, F Roccaforte
Applied Physics Letters 106 (14), 142903, 2015
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
P Fiorenza, G Greco, F Giannazzo, R Lo Nigro, F Roccaforte
Applied Physics Letters 101 (17), 172901, 2012
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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