Recessed-Gate Enhancement-Mode KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron device letters 39 (1), 67-70, 2017
223 2017 Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
123 2019 Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ...
Applied Physics Express 12 (12), 126501, 2019
46 2019 Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes E Farzana, A Bhattacharyya, NS Hendricks, T Itoh, S Krishnamoorthy, ...
APL Materials 10 (11), 2022
14 2022 500° C operation of β-Ga2O3 field-effect transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, DM Dryden, J Williams, H Lee, ...
Applied Physics Letters 121 (24), 2022
12 2022 Scaled T-Gate β -Ga2 O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit DM Dryden, KJ Liddy, AE Islam, JC Williams, DE Walker, NS Hendricks, ...
IEEE Electron Device Letters 43 (8), 1307-1310, 2022
12 2022 Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown NS Hendricks, E Farzana, AE Islam, KD Leedy, KJ Liddy, J Williams, ...
Applied Physics Express 16 (7), 071002, 2023
10 2023 Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage E Farzana, S Roy, NS Hendricks, S Krishnamoorthy, JS Speck
Applied Physics Letters 123 (19), 2023
7 2023 Single-Event Burnout by Cf-252 Irradiation in Vertical 2 O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate S Islam, AS Senarath, A Sengupta, EX Zhang, DR Ball, DM Fleetwood, ...
2023 Device Research Conference (DRC), 1-2, 2023
3 2023 Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes NS Hendricks, AE Islam, EA Sowers, J Williams, DM Dryden, KJ Liddy, ...
Journal of Applied Physics 135 (9), 2024
2 2024 Single-Event Burnout in Vertical β-Ga2 O3 Diodes with Pt/PtOx Schottky Contacts and High-k Field-Plate Dielectrics S Islam, AS Senarath, E Farzana, DR Ball, A Sengupta, NS Hendricks, ...
IEEE Transactions on Nuclear Science, 2024
2 2024 Self-Aligned Gate Thin-Channel β-Ga2 O3 MOSFETs KJ Liddy, NS Hendricks, AJ Green, A Popp, MT Lindquist, KD Leedy, ...
2019 Device Research Conference (DRC), 219-220, 2019
2 2019 500 degrees C operation of ss-Ga2O3 field-effect transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, DM Dryden, J Williams, H Lee, ...
APPLIED PHYSICS LETTERS 121 (24), 2022
1 2022 Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension J Williams, W Wang, NS Hendricks, A Adams, J Piel, DM Dryden, K Liddy, ...
Journal of Vacuum Science & Technology A 42 (3), 2024
2024 Phonon Bridges and Thermal Boundary Conductance Studies at Au/Ultrawide Bandgap Interfaces LA Larkin, G Garrett, AG Birdwell, N Hendricks, A Green, M Wraback
Bulletin of the American Physical Society, 2024
2024 Electrical Properties of Ga2 O3 Schottky Barrier Diodes with and without Mesa Structure M Kim, N Hendricks, N Moser, P Shrestha, S Pookpanratana, SM Koo, ...
Electrochemical Society Meeting Abstracts 243, 1840-1840, 2023
2023 Ni/TiO2 / 2 O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage J Williams, N Hendricks, W Wang, A Adams, J Piel, D Dryden, K Liddy, ...
2023 Device Research Conference (DRC), 1-2, 2023
2023 The 2 O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation S Ahmed, A Islam, D Dryden, K Liddy, N Hendricks, N Moser, K Chabak, ...
2023 Device Research Conference (DRC), 1-2, 2023
2023 β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition E Farzana, F Alema, T Itoh, N Hendricks, A Mauze, A Osinsky, J Speck
Oxide-based Materials and Devices XIII, PC120020H, 2022
2022 Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga E Farzana, A Bhattacharyya, NS Hendricks
2022 