| Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot ZF Ren, ZP Huang, DZ Wang, JG Wen, JW Xu, JH Wang, LE Calvet, ... Applied physics letters 75 (8), 1086-1088, 1999 | 605 | 1999 |
| Electronic transport through metal–1, 4-phenylene diisocyanide–metal junctions J Chen, LC Calvet, MA Reed, DW Carr, DS Grubisha, DW Bennett Chemical Physics Letters 313 (5-6), 741-748, 1999 | 234 | 1999 |
| Growth and characterization of aligned carbon nanotubes from patterned nickel nanodots and uniform thin films JG Wen, ZP Huang, DZ Wang, JH Chen, SX Yang, ZF Ren, JH Wang, ... Journal of Materials Research 16 (11), 3246-3253, 2001 | 89 | 2001 |
| Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors LE Calvet, H Luebben, MA Reed, C Wang, JP Snyder, JR Tucker Journal of applied physics 91 (2), 757-759, 2002 | 78 | 2002 |
| Electron transport measurements of Schottky barrier inhomogeneities LE Calvet, RG Wheeler, MA Reed Applied physics letters 80 (10), 1761-1763, 2002 | 68 | 2002 |
| Observation of the linear stark effect in a single acceptor in Si LE Calvet, RG Wheeler, MA Reed Physical review letters 98 (9), 096805, 2007 | 67 | 2007 |
| Conductive polymer based antenna for wireless green sensors applications K Guerchouche, E Herth, LE Calvet, N Roland, C Loyez Microelectronic Engineering 182, 46-52, 2017 | 52 | 2017 |
| Bayesian inference with muller c-elements JS Friedman, LE Calvet, P Bessière, J Droulez, D Querlioz IEEE Transactions on Circuits and Systems I: Regular Papers 63 (6), 895-904, 2016 | 52 | 2016 |
| Multi-island single-electron devices from self-assembled colloidal nanocrystal chains DN Weiss, X Brokmann, LE Calvet, MA Kastner, MG Bawendi Applied physics letters 88 (14), 2006 | 51 | 2006 |
| Subthreshold and scaling of PtSi Schottky barrier MOSFETs LE Calvet, H Luebben, MA Reed, C Wang, JP Snyder, JR Tucker Superlattices and Microstructures 28 (5-6), 501-506, 2000 | 51 | 2000 |
| On the physical behavior of cryogenic IV and III–V Schottky barrier MOSFET devices M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes IEEE Transactions on Electron Devices 64 (9), 3808-3815, 2017 | 34 | 2017 |
| Large arrays of well-aligned carbon nanotubes ZF Ren, ZP Huang, JW Xu, DZ Wang, JH Wang, LE Calvet, J Chen, ... AIP Conference Proceedings 486 (1), 263-267, 1999 | 29 | 1999 |
| A biocompatible and flexible polyimide for wireless sensors E Herth, K Guerchouche, L Rousseau, LE Calvet, C Loyez Microsystem Technologies 23, 5921-5929, 2017 | 25 | 2017 |
| Effect of local strain on single acceptors in Si LE Calvet, RG Wheeler, MA Reed Physical Review B 76 (3), 035319, 2007 | 25 | 2007 |
| Excited-state spectroscopy of single Pt atoms in Si LE Calvet, JP Snyder, W Wernsdorfer Physical Review B 78 (19), 195309, 2008 | 23 | 2008 |
| Spin structures and domain walls in multiferroics spin structures and magnetic domain walls in multiferroics AP Pyatakov, AK Zvezdin, AM Vlasov, AS Sergeev, DA Sechin, ... Ferroelectrics 438 (1), 79-88, 2012 | 20 | 2012 |
| Electrical transport in Schottky barrier MOSFETs LE Calvet Yale University, 2001 | 19 | 2001 |
| Contrasting advantages of learning with random weights and backpropagation in non-volatile memory neural networks CH Bennett, V Parmar, LE Calvet, JO Klein, M Suri, MJ Marinella, ... IEEE Access 7, 73938-73953, 2019 | 18 | 2019 |
| Fast ultra-deep silicon cavities: Toward isotropically etched spherical silicon molds using an ICP-DRIE E Herth, M Baranski, D Berlharet, S Edmond, D Bouville, LE Calvet, ... Journal of Vacuum Science & Technology B 37 (2), 2019 | 15 | 2019 |
| Shot noise measurements in diffusive normal metal-superconductor (NS) junctions AA Kozhevnikov, RJ Schoelkopf, LE Calvet, MJ Rooks, DE Prober Journal of Low Temperature Physics 118, 671-678, 2000 | 13 | 2000 |
