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Gvido Bratina
Gvido Bratina
University of Nova Gorica
Verified email at siol.net
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Cited by
Cited by
Year
Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend
T Leydecker, M Herder, E Pavlica, G Bratina, S Hecht, E Orgiu, P Samorì
Nature nanotechnology 11 (9), 769-775, 2016
3262016
Optically switchable transistor via energy-level phototuning in a bicomponent organic semiconductor
E Orgiu, N Crivillers, M Herder, L Grubert, M Pätzel, J Frisch, E Pavlica, ...
Nature chemistry 4 (8), 675-679, 2012
2722012
Local interface composition and band discontinuities in heterovalent heterostructures
R Nicolini, L Vanzetti, G Mula, G Bratina, L Sorba, A Franciosi, M Peressi, ...
Physical review letters 72 (2), 294, 1994
1641994
Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
L Sorba, G Bratina, G Ceccone, A Antonini, JF Walker, M Micovic, ...
Physical Review B 43 (3), 2450, 1991
1381991
The effect of polymer molecular weight on the performance of PTB7-Th: O-IDTBR non-fullerene organic solar cells
SF Hoefler, T Rath, N Pastukhova, E Pavlica, D Scheunemann, S Wilken, ...
Journal of Materials Chemistry A 6 (20), 9506-9516, 2018
972018
A nanomesh scaffold for supramolecular nanowire optoelectronic devices
L Zhang, X Zhong, E Pavlica, S Li, A Klekachev, G Bratina, TW Ebbesen, ...
Nature Nanotechnology 11 (10), 900-906, 2016
792016
Highly active photocatalytic coatings prepared by a low-temperature method
M Kete, E Pavlica, F Fresno, G Bratina, UL Štangar
Environmental Science and Pollution Research 21, 11238-11249, 2014
792014
Structure and local dipole of Si interface layers in AlAs-GaAs heterostructures
L Sorba, G Bratina, A Antonini, A Franciosi, L Tapfer, A Migliori, P Merli
Physical Review B 46 (11), 6834, 1992
641992
Behavior of the (0 0 0 1) surface of sapphire upon high-temperature annealing
PR Ribič, G Bratina
Surface science 601 (1), 44-49, 2007
612007
Multiresponsive nonvolatile memories based on optically switchable ferroelectric organic field‐effect transistors
M Carroli, AG Dixon, M Herder, E Pavlica, S Hecht, G Bratina, E Orgiu, ...
Advanced Materials 33 (14), 2007965, 2021
572021
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures
G Biasiol, L Sorba, G Bratina, R Nicolini, A Franciosi, M Peressi, S Baroni, ...
Physical review letters 69 (8), 1283, 1992
561992
Influence of transfer residue on the optical properties of chemical vapor deposited graphene investigated through spectroscopic ellipsometry
A Matković, U Ralević, M Chhikara, MM Jakovljević, D Jovanović, ...
Journal of Applied Physics 114 (9), 2013
542013
Growth of ultrathin pentacene films on polymeric substrates
PR Ribič, V Kalihari, CD Frisbie, G Bratina
Physical Review B 80 (11), 115307, 2009
522009
Photo-induced intramolecular charge transfer in an ambipolar field-effect transistor based on a π-conjugated donor–acceptor dyad
R Pfattner, E Pavlica, M Jaggi, SX Liu, S Decurtins, G Bratina, J Veciana, ...
Journal of Materials Chemistry C 1 (25), 3985-3988, 2013
502013
AlAs-GaAs heterojunction engineering by means of Group-IV elemental interface layers
G Bratina, L Sorba, A Antonini, G Biasiol, A Franciosi
Physical Review B 45 (8), 4528, 1992
461992
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors
F Otón, R Pfattner, E Pavlica, Y Olivier, E Moreno, J Puigdollers, G Bratina, ...
Chemistry of Materials 23 (3), 851-861, 2011
382011
Self‐suspended nanomesh scaffold for ultrafast flexible photodetectors based on organic semiconducting crystals
L Zhang, N Pasthukova, Y Yao, X Zhong, E Pavlica, G Bratina, E Orgiu, ...
Advanced Materials 30 (28), 1801181, 2018
372018
Epitaxial growth and interface parameters of Si layers on GaAs (001) and AlAs (001) substrates
G Bratina, L Sorba, A Antonini, L Vanzetti, A Franciosi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
371991
Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge (001), Ge-GaAs (001), and ZnSe-GaAs (001)
G Bratina, L Vanzetti, L Sorba, G Biasiol, A Franciosi, M Peressi, S Baroni
Physical Review B 50 (16), 11723, 1994
361994
The influence of LiF layer abd ZnO nanoparticels addings on the performances of flexible photovoltaic cells based on polymer blends
A Radu, S Iftimie, V Ghenescu, C Besleaga, VA Antohe, G Bratina, L Ion, ...
Digest Journal of Nanomaterials and Biostructures 6 (3), 1141-1148, 2011
352011
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