| Optically switchable transistor via energy-level phototuning in a bicomponent organic semiconductor E Orgiu, N Crivillers, M Herder, L Grubert, M Pätzel, J Frisch, E Pavlica, ... Nature chemistry 4 (8), 675, 2012 | 183 | 2012 |
| Local interface composition and band discontinuities in heterovalent heterostructures R Nicolini, L Vanzetti, G Mula, G Bratina, L Sorba, A Franciosi, M Peressi, ... Physical review letters 72 (2), 294, 1994 | 160 | 1994 |
| Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles L Sorba, G Bratina, G Ceccone, A Antonini, JF Walker, M Micovic, ... Physical Review B 43 (3), 2450, 1991 | 133 | 1991 |
| Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend T Leydecker, M Herder, E Pavlica, G Bratina, S Hecht, E Orgiu, P Samorì Nature nanotechnology 11 (9), 769, 2016 | 107 | 2016 |
| Structure and local dipole of Si interface layers in AlAs-GaAs heterostructures L Sorba, G Bratina, A Antonini, A Franciosi, L Tapfer, A Migliori, P Merli Physical Review B 46 (11), 6834, 1992 | 62 | 1992 |
| Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures G Biasiol, L Sorba, G Bratina, R Nicolini, A Franciosi, M Peressi, S Baroni, ... Physical review letters 69 (8), 1283, 1992 | 53 | 1992 |
| Behavior of the (0 0 0 1) surface of sapphire upon high-temperature annealing PR Ribič, G Bratina Surface science 601 (1), 44-49, 2007 | 46 | 2007 |
| AlAs-GaAs heterojunction engineering by means of Group-IV elemental interface layers G Bratina, L Sorba, A Antonini, G Biasiol, A Franciosi Physical Review B 45 (8), 4528, 1992 | 46 | 1992 |
| Growth of ultrathin pentacene films on polymeric substrates PR Ribič, V Kalihari, CD Frisbie, G Bratina Physical Review B 80 (11), 115307, 2009 | 45 | 2009 |
| Highly active photocatalytic coatings prepared by a low-temperature method M Kete, E Pavlica, F Fresno, G Bratina, UL Štangar Environmental Science and Pollution Research 21 (19), 11238-11249, 2014 | 44 | 2014 |
| A nanomesh scaffold for supramolecular nanowire optoelectronic devices L Zhang, X Zhong, E Pavlica, S Li, A Klekachev, G Bratina, TW Ebbesen, ... Nature nanotechnology 11 (10), 900, 2016 | 39 | 2016 |
| Epitaxial growth and interface parameters of Si layers on GaAs (001) and AlAs (001) substrates G Bratina, L Sorba, A Antonini, L Vanzetti, A Franciosi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 36 | 1991 |
| Photo-induced intramolecular charge transfer in an ambipolar field-effect transistor based on a π-conjugated donor–acceptor dyad R Pfattner, E Pavlica, M Jaggi, SX Liu, S Decurtins, G Bratina, J Veciana, ... Journal of materials chemistry C 1 (25), 3985-3988, 2013 | 35 | 2013 |
| Influence of transfer residue on the optical properties of chemical vapor deposited graphene investigated through spectroscopic ellipsometry A Matković, U Ralević, M Chhikara, MM Jakovljević, D Jovanović, ... Journal of Applied Physics 114 (9), 093505, 2013 | 34 | 2013 |
| ZnSe-GaAs heterojunction parameters G Bratina, R Nicolini, L Sorba, L Vanzetti, G Mula, X Yu, A Franciosi Journal of crystal growth 127 (1-4), 387-391, 1993 | 34 | 1993 |
| Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge (001), Ge-GaAs (001), and ZnSe-GaAs (001) G Bratina, L Vanzetti, L Sorba, G Biasiol, A Franciosi, M Peressi, S Baroni Physical Review B 50 (16), 11723, 1994 | 33 | 1994 |
| Microscopic control of ZnSe-GaAs heterojunction band offsets G Bratina, L Vanzetti, R Nicolini, L Sorba, X Yu, A Franciosi, G Mula, ... Physica B: Condensed Matter 185 (1-4), 557-565, 1993 | 33 | 1993 |
| Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors F Otón, R Pfattner, E Pavlica, Y Olivier, E Moreno, J Puigdollers, G Bratina, ... Chemistry of Materials 23 (3), 851-861, 2010 | 32 | 2010 |
| Arsenic cap layer desorption and the formation of GaAs(001)c(4×4) surfaces I Karpov, N Venkateswaran, G Bratina, W Gladfelter, A Franciosi, L Sorba Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 30 | 1995 |
| Modification of Al/GaAs (001) Schottky barriers by means of heterovalent interface layers M Cantile, L Sorba, P Faraci, S Yildirim, G Biasiol, G Bratina, A Franciosi, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 28 | 1994 |
Lucia SORBANEST, Istituto Nanoscienze-CNR and Scuola Normale SuperioreEmail verificata su sns.it
