| Study of high-k/metal-gate work-function variation using Rayleigh distribution H Nam, C Shin IEEE Electron Device Letters 34 (4), 532-534, 2013 | 63 | 2013 |
| Study of Work-Function Variation in High-/Metal-Gate Gate-All-Around Nanowire MOSFET H Nam, Y Lee, JD Park, C Shin IEEE Transactions on Electron Devices 63 (8), 3338-3341, 2016 | 41 | 2016 |
| Impact of current flow shape in tapered (versus rectangular) FinFET on threshold voltage variation induced by work-function variation H Nam, C Shin IEEE Transactions on Electron Devices 61 (6), 2007-2011, 2014 | 36 | 2014 |
| Symmetric tunnel field-effect transistor (S-TFET) H Nam, MH Cho, C Shin Current Applied Physics 15 (2), 71-77, 2015 | 34 | 2015 |
| Random variation analysis and variation-aware design of symmetric tunnel field-effect transistor H Lee, S Park, Y Lee, H Nam, C Shin IEEE Transactions on Electron Devices 62 (6), 1778-1783, 2014 | 29 | 2014 |
| Study of High-/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept H Nam, C Shin IEEE electron device letters 34 (12), 1560-1562, 2013 | 28 | 2013 |
| Study of Work-Function Variation for High- /Metal-Gate Ge-Source Tunnel Field-Effect Transistors Y Lee, H Nam, JD Park, C Shin IEEE Transactions on Electron Devices 62 (7), 2143-2147, 2015 | 24 | 2015 |
| The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type Ge FinFET performances JK Kim, GS Kim, H Nam, C Shin, JH Park, JK Kim, BJ Cho, KC Saraswat, ... IEEE Electron Device Letters 35 (12), 1185-1187, 2014 | 23 | 2014 |
| A Full X-Band Phased-Array Transmit/Receive Module Chip in 65-nm CMOS Technology H Nam, VV Nguyen, VS Trinh, JM Song, BH Lee, JD Park IEEE Access 8, 76182-76192, 2020 | 19 | 2020 |
| A 20.5-dBm -Band Power Amplifier With a 1.2-V Supply in 65-nm CMOS Technology VS Trinh, H Nam, JD Park IEEE Microwave and Wireless Components Letters 29 (3), 234-236, 2018 | 18 | 2018 |
| Analysis of random variations and variation-robust advanced device structures H Nam, GS Lee, H Lee, IJ Park, C Shin JSTS: Journal of Semiconductor Technology and Science 14 (1), 8-22, 2014 | 17 | 2014 |
| An X-band bi-directional transmit/receive module for a phased array system in 65-nm CMOS VV Nguyen, H Nam, YJ Choe, BH Lee, JD Park Sensors 18 (8), 2569, 2018 | 16 | 2018 |
| Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-/Metal-Gate Work-Function Variation H Nam, C Shin, JD Park IEEE Transactions on Electron Devices 65 (11), 4780-4785, 2018 | 15 | 2018 |
| A Compact I/Q Upconversion Chain for a 5G Wireless Transmitter in 65-nm CMOS Technology H Nam, W Lee, J Son, JD Park IEEE Microwave and Wireless Components Letters 30 (3), 284 - 287, 2020 | 14 | 2020 |
| Comparative study in work-function variation: Gaussian vs. Rayleigh distribution for grain size H Nam, C Shin IEICE Electronics Express 10 (9), 20130109-20130109, 2013 | 13 | 2013 |
| A Low-Dropout Regulator with PSRR Enhancement through Feed-Forward Ripple Cancellation Technique in 65 nm CMOS Process YJ Choe, H Nam, JD Park Electronics 9 (1), 146, 2020 | 7 | 2020 |
| A 2–18 GHz Compressed Sensing Receiver With Broadband LO Chain in 0.13- μ m BiCMOS H Nam, J Park, JD Park IEEE Microwave and Wireless Components Letters 29 (9), 620 - 622, 2019 | 7 | 2019 |
| A D-band high-linearity down-conversion mixer for 6G wireless communications H Nam, CJ Lee, D Kim, SK Kim, DY Lee, I Na IEEE Microwave and Wireless Technology Letters, 2023 | 5 | 2023 |
| The design optimization and variation study of segmented-channel MOSFET using HfO2 or SiO2 trench isolation H Nam, C Shin 2013 International Symposium on VLSI Technology, Systems and Application …, 2013 | 5 | 2013 |
| A W-Band Divide-by-Three Injection-Locked Frequency Divider With Injection Current Boosting Utilizing Inductive Feedback in 65-nm CMOS H Nam, JD Park IEEE Microwave and Wireless Components Letters 30 (5), 516-519, 2020 | 4 | 2020 |
Changhwan ShinProfessor at Korea UniversityVerified email at korea.ac.kr
