Wojciech Paszkowicz
Wojciech Paszkowicz
Professor of Materials Science, Institute of Physics, Warsaw
Email verificata su ifpan.edu.pl
Titolo
Citata da
Citata da
Anno
Extremely low temperature growth of ZnO by atomic layer deposition
E Guziewicz, IA Kowalik, M Godlewski, K Kopalko, V Osinniy, A Wjcik, ...
Journal of Applied Physics 103 (3), 033515, 2008
2682008
Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10–297.5 K temperature range
W Paszkowicz, JB Pelka, M Knapp, T Szyszko, S Podsiadlo
Applied Physics A 75 (3), 431-435, 2002
2582002
Genetic algorithms, a nature-inspired tool: survey of applications in materials science and related fields
W Paszkowicz
Materials and Manufacturing Processes 24 (2), 174-197, 2009
1332009
Rietveld-refinement study of aluminium and gallium nitrides
W Paszkowicz, S Podsiadło, R Minikayev
Journal of alloys and compounds 382 (1-2), 100-106, 2004
1282004
ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions
E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, ...
Journal of Applied Physics 105 (12), 122413, 2009
1112009
Magnetic properties of La 0.67 Sr 0.33 MnO 3/YBa 2 Cu 3 O 7 superlattices
P Przyslupski, I Komissarov, W Paszkowicz, P Dluzewski, R Minikayev, ...
Physical Review B 69 (13), 134428, 2004
1072004
Rietveld refinement for indium nitride in the 105–295 K range
W Paszkowicz, R Čern, S Krukowski
Powder Diffraction 18 (2), 114-121, 2003
1002003
Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition
A Wjcik, M Godlewski, E Guziewicz, R Minikayev, W Paszkowicz
Journal of Crystal Growth 310 (2), 284-289, 2008
942008
XPS and XRD study of crystalline 3C-SiC grown by sublimation method
RJ Iwanowski, K Fronc, W Paszkowicz, M Heinonen
Journal of alloys and compounds 286 (1-2), 143-147, 1999
911999
X-ray powder diffraction data for indium nitride
W Paszkowicz
Powder Diffraction 14 (4), 258-260, 1999
831999
Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors
IA Kowalik, E Guziewicz, K Kopalko, S Yatsunenko, A Wjcik-Głodowska, ...
Journal of crystal growth 311 (4), 1096-1101, 2009
702009
Rietveld refinement for CuInSe2 and CuIn3Se5
W Paszkowicz, R Lewandowska, R Bacewicz
Journal of alloys and compounds 362 (1-2), 241-247, 2004
692004
Genetic algorithms, a nature-inspired tool: a survey of applications in materials science and related fields: part II
W Paszkowicz
Materials and Manufacturing Processes 28 (7), 708-725, 2013
672013
Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition
G Luka, T Krajewski, L Wachnicki, B Witkowski, E Lusakowska, ...
physica status solidi (a) 207 (7), 1568-1571, 2010
672010
Composition dependence of the unit cell dimensions and the energy gap in Zn1-xMgxSe crystals
F Firszt, H Meczynska, B Sekulska, J Szatkowski, W Paszkowicz, ...
Semiconductor science and technology 10 (2), 197, 1995
661995
Raman scattering in α-In2Se3 crystals
R Lewandowska, R Bacewicz, J Filipowicz, W Paszkowicz
Materials research bulletin 36 (15), 2577-2583, 2001
642001
Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature
E Przeździecka, W Paszkowicz, E Łusakowska, T Krajewski, G Łuka, ...
Semiconductor science and technology 24 (10), 105014, 2009
622009
Complementary microstructural and chemical analyses of Sepia officinalis endoskeleton
M Florek, E Fornal, P Gmez-Romero, E Zieba, W Paszkowicz, J Lekki, ...
Materials Science and Engineering: C 29 (4), 1220-1226, 2009
592009
High-pressure powder X-ray diffraction at the turn of the century
W Paszkowicz
Nuclear Instruments and Methods in Physics Research Section B: Beam…, 2002
492002
Relation between structural properties of Pr3+-doped yttria-stabilized zirconia nanopowders and their luminescence efficiency
JD Fidelus, S Yatsunenko, M Godlewski, W Paszkowicz, ...
Scripta Materialia 61 (4), 415-418, 2009
482009
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
Articoli 1–20